Sei tichifanira kushandisa Ge semuchina wekuona mifananidzo

Sei tichifanira kushandisa Ge semudziyo wekuona foto
1, Nzvimbo Yekutanga: Nei zvichikosha kushandisa Ge semuchina wekuona mifananidzo
Muma silicon optical links, photodetector ndivo "vashanduri" vanoshandura ma optical signals kuita ma electrical signals. Zvisinei, silicon pachayo ine bandgap ye1.12 eV uye inoonekwa zvakanyanya kune 1310/1550 nm communication bands, saka germanium (Ge) chete ndiyo inogona kuiswa.
Ge ine bandgap yakananga ye0.8 eV, iyo inofukidza tambo yeO/C yekutaurirana, asi ine 4.2% lattice mismatch nesilicon. Kuwanda kwe dislocation kwekukura kwakananga kwakakwira se4 × 10 ⁸ cm ⁻ ², uye dark current haiwanikwe zvachose; Panguva imwe chete, Ge ine bandgap isina kujeka, uye absorption coefficient yayo yakajairika yakaderera pane InGaAs, inova kusasimba kwechisikigo.
2, Kubudirira kukuru: kubatanidzwa kwewaveguide kunoputsa chinetso chekushanda
"Kureba kwemunyoro = nzira yekuunganidza vatori vechikamu" yema "vertical incidence photodetectors" ane "responsivity bandwidth" seesaw, ine muganho wepamusoro we7GHz chete;
Parizvino, nzira dzekushandisa dzinoshandiswa zvikuru dzakakamurwa kuva mapoka matatu:
Pini yakamira: Maitiro acho ari nyore uye anozivikanwa zvikuru muindasitiri, achisvika pa40Gb/s @ zero bias uye>60GHz bandwidth;
MSM Metal Semiconductor Metal: Hapana chikonzero chekushandisa doping inodziya zvakanyanya, inogona kubatanidzwa kumashure, ine rima rakawanda, uye bandwidth inopfuura 40GHz;
Mhando dzemhando yepamusoro:Zvishandiso zvemafungu zvinofamba(TWPD) uye single line carrier photodetectors (UTC) zvinoshandiswa pakubatanidza ma microwave photon links, zvichienzanisa bandwidth yakakwira uye high saturation photocurrent.
3, Zvishandiso uye Unyanzvi: Kushandura 'Zvikanganiso' kuita Zvakanakira
Mukupindura kusawirirana kwe lattice uye zvikanganiso zvekushanda, indasitiri iyi yakagadzira mhinduro dzakura:
Nzira mbiri dze epitaxy: chekutanga, jira re buffer rine tembiricha yakaderera re30-50nm rinokura, uye tembiricha inowedzerwa kusvika pakukora kwakanangana, zvichideredza huwandu hwe dislocation kusvika ~10 ⁷ cm ⁻ ²;
Unyanzvi hweStrain: Musiyano uripo pakati peGe neSi uchaita kuti 0.2% biaxial tensile strain iite muGe film, zvichikonzera kudzikira kweband gap kubva pa0.8 eV kusvika pa0.77 eV uye kuwedzera kweabsorption edge kubva pa1.55 μ m kusvika pa1.61 μ m, zvichifukidza C+L band yese, uye kunyangwe absorption coefficient iri muL band inogona kuenzana neInGaAs;
Kubatanidzwa kweCMOS: Kuchiri muchikamu chekuongorora. Kubatanidzwa kwemberi (FEOL) kunofanirwa kutsungirira tembiricha yepamusoro inodarika 750 ℃, nepo kusanganiswa kwemashure (BEOL) kusingakuvadzi tembiricha asi kusina crystal substrates, uye hakusati kwagadzira mhinduro yakabatana yakakura. Parizvino, indasitiri iyi inowanzoshandisa nzira yakasanganiswa ye "90% single-chip + external".laser". (or) ". (or" . ".)