Rudzi rwemudziyo wekuona mufananidzochimiro
Chinoongorora mufananidzomudziyo unoshandura chiratidzo che optical kuita chiratidzo chemagetsi, chimiro chayo uye mhando dzayo, unogona kukamurwa muzvikamu zvinotevera:
(1) Chinoongorora chiedza chephotoconductor
Kana michina inofambisa magetsi ikasangana nechiedza, chinhu chinofambisa magetsi chinowedzera simba rayo rekufambisa magetsi uye chinoderedza simba rayo rekudzivirira. Zvinhu zvinofambisa magetsi zvinofamba zvakananga pasi pesimba remagetsi, zvichigadzira simba remagetsi. Pasi pechiedza, maerekitironi anofadzwa uye shanduko inoitika. Panguva imwe chete, zvinofamba pasi pesimba remagetsi kuti zvigadzire simba remagetsi rekufambisa magetsi. Zvinhu zvinofambisa magetsi zvinobuda zvinowedzera simba rekufambisa magetsi uye nokudaro zvinoderedza simba rekudzivirira. Zvishandiso zvinofambisa magetsi zvekufambisa magetsi zvinowanzoratidza simba guru uye simba guru rekushandisa, asi hazvigone kupindura zviratidzo zvemagetsi zvine frequency yakakwira, saka kumhanya kwemhinduro kunononoka, izvo zvinoderedza kushandiswa kwezvishandiso zvinofambisa magetsi mune zvimwe zvinhu.
(2)Chinoongorora mufananidzo wePN
PN photodetector inoumbwa nekubatana pakati peP-type semiconductor material nezvinhu zveN-type semiconductor. Kubatana kusati kwagadzirwa, zvinhu zviviri izvi zvinenge zviri muchimiro chakasiyana. Fermi level muP-type semiconductor iri pedyo nemupendero wevalence band, nepo Fermi level muN-type semiconductor iri pedyo nemupendero weconduction band. Panguva imwe chete, Fermi level yezvinhu zveN-type pamucheto weconduction band inoramba ichichinjwa ichidzika kusvika Fermi level yezvinhu zviviri iri panzvimbo imwe chete. Kuchinja kwenzvimbo yeconduction band nevalence band kunoperekedzwawo nekukombama kwebhendi. PN junction iri mu equilibrium uye ine Fermi level yakafanana. Kubva pane imwe nzira yekuongorora charge carrier, charge carriers zhinji muP-type maburi, nepo charge carriers zhinji muN-type materials ari maerekitironi. Kana zvinhu zviviri izvi zvakabatana, nekuda kwekusiyana kwe carrier concentration, maerekitironi muN-type materials achapararira kuenda kuP-type, nepo maerekitironi muN-type materials achapararira nenzira yakatarisana nemaburi. Nzvimbo isina muripo inosiyiwa nekupararira kwemaerekitironi nemaburi ichaumba munda wemagetsi wakavakirwa mukati, uye munda wemagetsi wakavakirwa mukati uchafamba nenzira yekutakura, uye nzira yekudzungaira iri pakatarisana nenzira yekupararira, zvinoreva kuti kuumbwa kwemunda wemagetsi wakavakirwa mukati kunodzivirira kupararira kwevatakuri, uye kune zvese kupararira nekudzungaira mukati mePN junction kusvika mhando mbiri dzekufamba dzaenzana, kuitira kuti kufamba kwemutakuri wemagetsi kurege kuva zero. Internal dynamic balance.
Kana PN junction yaiswa pamwaranzi yechiedza, simba rephoton rinoendeswa kune inotakura, uye inotakura inogadzirwa nephoto, kureva kuti, iyo photogenerated electron-hole pair, inogadzirwa. Pasi pesimba remagetsi, maerekitironi negomba zvinoenda kunzvimbo yeN nenzvimbo yeP zvakateerana, uye kudhiraivha kweinotakura inogadzirwa nephoto inogadzira photocurrent. Iyi ndiyo musimboti wekutanga wePN junction photodetector.
(3)Chinoongorora mufananidzo chePIN
Pin photodiode chinhu cheP-type uye N-type chiri pakati peI layer, I layer yezvinhu izvi inowanzova chinhu chemukati kana kuti chisina doping yakawanda. Maitiro ayo ekushanda akafanana nePN junction, kana PIN junction yaiswa pamwaranzi yechiedza, photon inoendesa simba kumaerekitironi, ichigadzira photogenerated charge carriers, uye internal electric field kana external electric field ichaparadzanisa photogenerated electron-hole pairs mudepletion layer, uye drifted charge carriers dzichagadzira current muexternal circuit. Basa rinoitwa nelayer I nderekuwedzera upamhi hwedepletion layer, uye layer I ichave depletion layer zvachose pasi pe bias voltage yakakura, uye electron-hole pairs dzinogadzirwa dzichaparadzaniswa nekukurumidza, saka response speed yePIN junction photodetector inowanzo kukurumidza kupfuura yePN junction detector. Carriers dziri kunze kweI layer dzinounganidzwawo nedepletion layer kuburikidza ne diffusion motion, dzichigadzira diffusion current. Ukobvu hweI layer hunowanzova hutete, uye chinangwa chayo ndechekuvandudza response speed ye depletion.
(4)Chinoongorora mufananidzo cheAPDphotodiode yeavalanche
Maitiro ephotodiode yeavalancheyakafanana neyePN junction. APD photodetector inoshandisa PN junction ine doped yakawanda, voltage yekushanda yakavakirwa pakuona kweAPD yakakura, uye kana paine reverse bias hombe yakawedzerwa, collision ionization uye avalanche multiplication zvichaitika mukati meAPD, uye mashandiro e detector anowedzera photocurrent. Kana APD iri mu reverse bias mode, electric field iri mu depletion layer ichave yakasimba kwazvo, uye photogenerated carriers inogadzirwa nechiedza ichakurumidza kuparadzaniswa uye nekukurumidza kudonha pasi pesimba re electric. Pane mukana wekuti maerekitironi achasangana ne lattice panguva iyi, zvichiita kuti maerekitironi ari mu lattice ave ionized. Maitiro aya anodzokororwa, uye maion ionized ari mu lattice anogovanawo ne lattice, zvichiita kuti huwandu hwechaja dzinotakura muAPD huwedzere, zvichikonzera large current value. Ndiyo iyi nzira yakasiyana ye physical mukati meAPD iyo ma detectors akavakirwa paAPD anowanzova nehunhu hwekumhanya kwekupindura nekukurumidza, large current value gain uye high sensitivity. Kana tichienzanisa nePN junction nePIN junction, APD ine kumhanya kwekupindura nekukurumidza, inova ndiyo kumhanya kwekupindura nekukurumidza pakati pemachubhu anonzwa chiedza aripo iye zvino.
(5) Chinoongorora mifananidzo cheSchottky junction
Chimiro chikuru cheSchottky junction photodetector iSchottky diode, ine hunhu hwemagetsi hwakafanana nehwePN junction yakatsanangurwa pamusoro apa, uye ine unidirectional conductivity ine positive conduction uye reverse cut-off. Kana simbi ine high work function uye semiconductor ine low work function ikaita contact, Schottky barrier inoumbwa, uye junction inobuda iSchottky junction. Main mechanism yakafanana nePN junction, tichitora N-type semiconductors semuenzaniso, kana zvinhu zviviri zvikaita contact, nekuda kwekusiyana kwemaerekitironi ezvinhu zviviri, maerekitironi ari mu semiconductor achapararira kudivi resimbi. Maerekitironi akapararira anoungana nguva dzose kune rimwe divi resimbi, nokudaro achiparadza electrical neutral yesimbi, achigadzira built-in electrical field kubva ku semiconductor kuenda kusimbi iri pamusoro pecontact, uye maerekitironi achafamba pasi pesimba remukati remagetsi, uye carrier's diffusion and drift motion zvichaitwa panguva imwe chete, mushure menguva yakati kuti asvike dynamic equilibrium, uye pakupedzisira kugadzira Schottky junction. Mumamiriro echiedza, nzvimbo inovharira inotora chiedza zvakananga uye inogadzira maerekitironi maviri ane maburi maviri, nepo zvinhu zvinogadzirwa nemufananidzo mukati mePN junction zvichifanira kupfuura nepakati penzvimbo inopararira kuti zvisvike panzvimbo inoungana. Kana zvichienzaniswa nePN junction, photodetector yakavakirwa paSchottky junction ine kumhanya kwekupindura nekukurumidza, uye kumhanya kwekupindura kunogona kutosvika padanho re ns.
Nguva yekutumira: Nyamavhuvhu-13-2024