Thin film lithium niobate (LN) photodetector

Thin film lithium niobate (LN) photodetector

Lithium niobate (LN) ine yakasarudzika crystal chimiro uye yakapfuma mhedzisiro yemuviri, senge isina mutsetse mhedzisiro, electro-optic mhedzisiro, pyroelectric mhedzisiro, uye piezoelectric mhedzisiro. Panguva imwecheteyo, ine zvakanakira zvewideband optical transparency hwindo uye kugadzikana kwenguva refu. Aya maitiro anoita LN chikuva chakakosha chechizvarwa chitsva cheakasanganiswa mafotonics. Mumidziyo yemaziso uye optoelectronic masisitimu, hunhu hweLN hunogona kupa akapfuma mabasa uye kuita, kusimudzira kuvandudzwa kweoptical communication, optical computing, uye optical sensing minda. Nekudaro, nekuda kwekusasimba kunyura uye kuvharidzira zvivakwa zve lithium niobate, iyo yakabatanidzwa yekushandisa ye lithium niobate ichiri kutarisana nedambudziko rekunetsa kuona. Mumakore achangopfuura, mishumo mundima iyi inonyanya kusanganisira waveguide integrated photodetectors uye heterojunction photodetectors.
Iyo waveguide yakabatanidzwa photodetector yakavakirwa pa lithium niobate inowanzo tarisa pane optical communication C-band (1525-1565nm). Panyaya yebasa, LN inonyanya kuita basa remasaisai anotungamirwa, nepo optoelectronic yekuona basa rinonyanya kuvimba nemasemiconductors akadai sesilicon, III-V boka rakamanikana bandgap semiconductors, uye maviri-dimensional zvinhu. Muchivakwa chakadaro, chiedza chinofambiswa kuburikidza ne lithium niobate optical waveguides nekurasikirwa kwakaderera, uye zvino inotorwa nemamwe semiconductor zvinhu zvichibva pane photoelectric madhara (zvakadai se photoconductivity kana photovoltaic effects) kuwedzera mutakuri wekutengesa uye kuishandura kuva zviratidzo zvemagetsi zvekubuda. Mabhenefiti akakwira anoshanda bandwidth (~GHz), yakaderera yekushanda voltage, saizi diki, uye kuenderana nephotonic chip kubatanidzwa. Nekudaro, nekuda kwekuparadzaniswa kwenzvimbo yelithium niobate uye semiconductor zvinhu, kunyangwe ivo vese vachiita mabasa avo, LN inongotora basa mukutungamirira masaisai uye zvimwe zvakanaka zvekunze zvivakwa hazvina kunyatso shandiswa. Semiconductor zvinhu zvinongoita basa mukushandurwa kwephotoelectric uye kushaikwa kwekubatanidza kune mumwe nemumwe, zvichikonzera kushomeka kwebhendi rekushandisa. Panyaya yekushandiswa kwakananga, kubatanidzwa kwechiedza kubva kune mwenje sosi kuenda kune lithium niobate optical waveguide kunoguma nekurasikirwa kukuru uye kusimba kwemaitiro zvinodiwa. Mukuwedzera, iyo chaiyo optical simba rechiedza rinovhenekerwa pane semiconductor mudziyo chiteshi munharaunda yekubatanidza yakaoma kuenzanisa, iyo inoganhura maitiro ayo ekuona.
The zvechivanhuphotodetectorsinoshandiswa pakufungidzira zvikumbiro zvinowanzobva pane semiconductor zvinhu. Naizvozvo, kune lithium niobate, iyo yakaderera chiedza kunyura mwero uye insulating midziyo inoita kuti pasina mubvunzo isafarirwa nevanoongorora photodetector, uye kunyange yakaoma pfungwa mumunda. Nekudaro, kuvandudzwa kweheterojunction tekinoroji mumakore achangopfuura kwakaunza tariro kutsvagurudzo yelithium niobate based photodetectors. Zvimwe zvinhu zvine mwenje wakasimba wekunyura kana yakanakisa conductivity inogona kusanganiswa ne lithium niobate kutsiva kukanganisa kwayo. Panguva imwecheteyo, iyo inongoerekana yavapo polarization inokonzera pyroelectric maitiro e lithium niobate nekuda kwemaitiro ayo anisotropy inogona kudzorwa nekushandurwa kusvika pakupisa pasi pekuvhenekera kwechiedza, nekudaro kushandura pyroelectric maitiro ekuona optoelectronic. Iyi yekupisa mhedzisiro ine zvakanakira wideband uye kuzvityaira wega, uye inogona kunyatsoenderana uye kusanganiswa nezvimwe zvinhu. Iko synchronous kushandiswa kwekupisa uye photoelectric mhedzisiro yakavhura nguva nyowani yelithium niobate based photodetectors, ichigonesa zvishandiso kusanganisa zvakanakira zvese mhedzisiro. Uye kugadzirisa zvikanganiso uye kuwana mubatanidzwa wekubatanidzwa kwezvakanakira, Iyo inzvimbo yekutsvagisa mumakore achangopfuura. Pamusoro pezvo, kushandiswa kweiyo ion implantation, bhendi engineering, uye defect engineering zvakare isarudzo yakanaka yekugadzirisa kuoma kwekuona lithium niobate. Zvisinei, nekuda kwekuoma kwekugadzirisa kwe lithium niobate, munda uyu uchiri kutarisana nematambudziko makuru akadai sekubatana kwakaderera, zvigadzirwa zvekufungidzira zvakarongwa uye maitiro, uye kushanda kusina kukwana, iyo ine hukuru hwekutsvakurudza uye nzvimbo.

Mufananidzo 1, uchishandisa simba rakaremara mukati meLN bandgap semaelectron donor centers, vatakuri vemahara vanogadzirwa mubhendi rekufambisa pasi pechiedza chinooneka. Kuenzaniswa neyakapfuura pyroelectric LN photodetectors, iyo yaiwanzoganhurirwa kumhanyisa yekupindura kunosvika 100Hz, iyiLN photodetectorine kukurumidza kupindura kumhanya kusvika ku10kHz. Zvichakadaro, mubasa iri, zvakaratidzwa kuti magnesium ion doped LN inogona kuwana kunze kwechiedza modulation nemhinduro inosvika ku10kHz. Iri basa rinokurudzira kutsvagisa kwepamusoro-kuita uyehigh-speed LN photodetectorsmukuvaka kwekushanda zvizere single-chip yakabatanidzwa LN photonic chips.
Muchidimbu, nzvimbo yekutsvakurudza yemutete firimu lithium niobate photodetectorsine kukosha kwesainzi yakakosha uye hukuru hunoshanda hunogona kuita. Mune ramangwana, nekuvandudzwa kwetekinoroji uye nekudzika kwetsvagiridzo, firimu rakatetepa lithium niobate (LN) mafotodetectors anozosimudzira akanangana nekubatana kwepamusoro. Kubatanidza nzira dzakasiyana dzekubatanidza kuti dzibudirire kuita kwepamusoro-soro, kupindura nekukurumidza, uye wideband yakaonda firimu lithium niobate photodetectors muzvinhu zvese zvichave zvechokwadi, izvo zvichasimudzira zvikuru kuvandudzwa kwe-on-chip kubatanidzwa uye minda yehungwaru yekunzwa, uye kupa mikana yakawanda yechizvarwa chitsva chephotonics application.