Chinoongorora firimu rakatetepa re lithium niobate (LN)

Chinoongorora firimu rakatetepa re lithium niobate (LN)

Lithium niobate (LN) ine chimiro chakasiyana chekristaro uye mhedzisiro yemuviri yakapfuma, senge mhedzisiro isiri yemutsara, mhedzisiro yeelectro-optic, mhedzisiro yepyroelectric, uye mhedzisiro yepiezoelectric. Panguva imwe chete, ine zvakanakira hwindo rekuona pachena kwe wideband optical uye kugadzikana kwenguva refu. Hunhu uhu hunoita kuti LN ive puratifomu yakakosha yechizvarwa chitsva chephotonics dzakabatanidzwa. Muzvishandiso zve optical uye masisitimu e optoelectronic, hunhu hweLN hunogona kupa mabasa akapfuma uye mashandiro, zvichikurudzira kukura kwekutaurirana kwe optical, optical computing, uye minda yekuona ye optical. Zvisinei, nekuda kwekusasimba kwe absorption uye insulation ye lithium niobate, kushandiswa kwakabatanidzwa kwe lithium niobate kuchiri kutarisana nedambudziko rekuomerwa kwekuona. Mumakore achangopfuura, mishumo mumunda uyu inonyanya kusanganisira waveguide integrated photodetectors uye heterojunction photodetectors.
Iyo waveguide integrated photodetector yakavakirwa pa lithium niobate inowanzo tarisa pa optical communication C-band (1525-1565nm). Panyaya yebasa, LN inonyanya kuita basa remafungu anotungamirwa, nepo optoelectronic detection function inonyanya kushandisa ma semiconductor akadai sesilicon, III-V group narrow bandgap semiconductors, uye two-dimensional materials. Mumagadzirirwo akadaro, chiedza chinotapurirwa kuburikidza ne lithium niobate optical waveguides nekurasikirwa kushoma, uye chobva chatorwa nezvimwe zvinhu zve semiconductor zvichibva pamhedzisiro ye photoelectric (senge photoconductivity kana photovoltaic effects) kuti chiwedzere carrier concentration uye chichichishandura kuita masaini emagetsi kuti chibudiswe. Zvakanakira ndezve high operating bandwidth (~GHz), low operating voltage, small size, uye compatibility ne photonic chip integration. Zvisinei, nekuda kwekuparadzaniswa kwenzvimbo kwezvinhu zve lithium niobate uye semiconductor, kunyangwe chimwe nechimwe chichiita mabasa acho, LN inongotamba basa mukutungamira mafungu uye zvimwe zvinhu zvakanaka zvekune dzimwe nyika hazvina kushandiswa zvakanaka. Zvinhu zve semiconductor zvinongotamba basa mukushandura photoelectric uye hazvina kubatana kwakabatana, zvichikonzera bhendi rekushanda rakaganhurirwa. Panyaya yekushandiswa kwakanangana, kubatana kwechiedza kubva kunobva chiedza kuenda ku lithium niobate optical waveguide kunoguma nekurasikirwa kukuru uye zvinodiwa zvakanyanya pakuita. Pamusoro pezvo, simba rechiedza chairo rinovhenekerwa pachiteshi chemidziyo ye semiconductor munzvimbo yekubatanidza rakaoma kuyera, izvo zvinoderedza mashandiro aro ekuona.
ChinyakarephotodetectorsZvinoshandiswa pakushandisa mifananidzo zvinowanzo shandiswa pazvinhu zve semiconductor. Saka, kune lithium niobate, mwero wayo wekudzikisa chiedza zvishoma uye hunhu hwayo hwekudzivirira kupisa zvinoita kuti isafarirwa nevaongorori ve photodetector, uye kunyange nzvimbo yakaoma mumunda uyu. Zvisinei, kuvandudzwa kwetekinoroji ye heterojunction mumakore achangopfuura kwakaunza tariro mukutsvagisa kwe lithium niobate based photodetectors. Zvimwe zvinhu zvine simba rekudzikisa chiedza kana conductivity yakanaka zvinogona kubatanidzwa ne lithium niobate kuti zvitsive zvikanganiso zvayo. Panguva imwecheteyo, polarization yakakonzera pyroelectric hunhu hwe lithium niobate nekuda kwe anisotropy yayo yechimiro inogona kudzorwa nekushandura kuita kupisa pasi pechiedza, nokudaro ichichinja hunhu hwe pyroelectric kuti ionekwe ne optoelectronic. Iyi thermal effect ine zvakanakira zve wideband uye self driving, uye inogona kuwedzerwa zvakanaka uye kusanganiswa nezvimwe zvinhu. Kushandiswa kwakafanana kwe thermal ne photoelectric effects kwakavhura nguva itsva ye lithium niobate based photodetectors, zvichiita kuti michina ibatanidze zvakanakira zvese zviri zviviri. Uye kuti igadzirise zvikanganiso uye iwane complementary integration yezvakanakira, Inzvimbo yekutsvagisa mumakore achangopfuura. Pamusoro pezvo, kushandiswa kwe ion implantation, band engineering, uye defect engineering isarudzo yakanaka yekugadzirisa dambudziko rekuona lithium niobate. Zvisinei, nekuda kwekuoma kukuru kwekugadzirisa kwe lithium niobate, munda uyu uchiri kutarisana nematambudziko makuru akadai sekubatanidzwa kushoma, zvishandiso zvemifananidzo ye array uye masisitimu, uye kusashanda zvakanaka, izvo zvine kukosha kukuru kwekutsvaga nenzvimbo.

Mufananidzo 1, uchishandisa mamiriro esimba remadhiragi ari mukati meLN bandgap senzvimbo dzevanopa maerekitironi, ma free charge carriers anogadzirwa mu conduction band pasi pe visible light excitation. Zvichienzaniswa ne pyroelectric LN photodetectors dzekare, idzo dzaiwanzo ganhurira pakumhanya kwekupindura kweinenge 100Hz, izviChinoongorora mufananidzo cheLNine kumhanya kwekupindura nekukurumidza kusvika ku10kHz. Panguva iyi, mubasa iri, zvakaratidzwa kuti LN ine magnesium ion doped LN inogona kuita kuti chiedza chekunze chive nemhinduro inosvika ku10kHz. Basa iri rinokurudzira tsvakiridzo pamusoro pekushanda kwepamusoro uyemafoto detector eLN anomhanya kwazvomukugadzirwa kwemachipisi eLN photonic akabatanidzwa anoshanda zvizere ane chipu chimwe chete.
Muchidimbu, ndima yekutsvagisa yemafoto detector e lithium niobate firimu rakatetepaine kukosha kwakakosha kwesainzi uye kugona kukuru kwekushandisa. Mune ramangwana, nekuvandudzwa kwetekinoroji uye kuwedzera kwekutsvaga, ma "thin film lithium niobate (LN) photodetectors" achakura kusvika pakubatanidzwa kwepamusoro. Kubatanidza nzira dzakasiyana dzekubatanidza kuti uwane kushanda kwepamusoro, kupindura nekukurumidza, uye ma "wideband thin film lithium niobate photodetectors" mumativi ese kuchava chokwadi, izvo zvichakurudzira zvikuru kukura kwekubatanidzwa kwe "on-chip" uye nzvimbo dzekunzwisisa dzakangwara, uye kupa mikana yakawanda kune chizvarwa chitsva chema "photonics applications".