Nheyo yekushanda uye mhando huru dze semiconductor laser

Nheyo yekushanda uye mhando huru dzelaser ye semiconductor

SemiconductorMadiode eLaser, nekushanda kwavo kwepamusoro-soro, miniaturization uye kusiyana kwema wavelength, zvinoshandiswa zvakanyanya sezvikamu zvikuru zve tekinoroji ye optoelectronic muminda yakaita sekutaurirana, kurapwa uye kugadzirwa kwemaindasitiri. Chinyorwa chino chinowedzera kushanda nemhando dze semiconductor lasers, izvo zviri nyore kusarudzwa kwevazhinji vevaongorori ve optoelectronic.

1. Nheyo ye semiconductor lasers inoburitsa chiedza

Pfungwa yekupenya kwema semiconductor lasers inobva pachimiro chebhendi, kushanduka kwemagetsi uye kubuda kwezvinhu zve semiconductor zvinokurudzirwa. Zvinhu zve semiconductor rudzi rwezvinhu zvine bandgap, iyo inosanganisira valence band ne conduction band. Kana zvinhu zviri mu ground state, ma electron anozadza valence band pasina ma electron mu conduction band. Kana imwe electric field ikashandiswa kunze kana kuti current ikapinzwa, mamwe ma electron anoshanduka kubva ku valence band kuenda ku conduction band, zvichiita ma electron-hole pairs. Munguva yekuburitswa kwesimba, kana ma electron-hole pairs aya anokurudzirwa nenyika yekunze, ma photon, kureva ma lasers, anogadzirwa.

2. Nzira dzekukurudzira dze semiconductor lasers

Kune nzira nhatu dzinonyanya kushandiswa dze semiconductor lasers, dzinoti electrical injection type, optical pump type uye high-energy electron beam excitation type.

Malaser e semiconductor anoshandiswa nemagetsi: Kazhinji, i semiconductor surface-junction diodes akagadzirwa nezvinhu zvakaita se gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), uye zinc sulfide (ZnS). Anofara nekupinza magetsi achienda ku forward bias, zvichikonzera kuburitswa kwemhepo munzvimbo yejunction plane.

Malaser e semiconductor anopombwa nemaziso: Kazhinji, makristaro e semiconductor emhando yeN kana P (akadai seGaAS, InAs, InSb, nezvimwewo) anoshandiswa sechinhu chinoshanda, uyelaserinoburitswa nemamwe ma laser inoshandiswa senzira yekukurumidzira inopombwa nemaziso.

Malaser e semiconductor ane simba guru remaerekitironi anofara: Kazhinji, anoshandisawo makristaro e semiconductor emhando yeN kana P-type (akadai sePbS,CdS,ZhO, nezvimwewo) sechinhu chinoshanda uye anofara nekupinza danda re electron rine simba guru kubva kunze. Pakati pemidziyo ye semiconductor laser, iyo inoshanda zviri nani uye inoshandiswa zvakanyanya iGaAs diode laser inopinzwa nemagetsi ine double heterostructure.

3. Mhando huru dze semiconductor lasers

Nzvimbo Inoshanda ye semiconductor laser ndiyo nzvimbo huru yekugadzira uye kuwedzera photon, uye ukobvu hwayo hunongova ma micrometer mashoma. Maumbirwo emukati me waveguide anoshandiswa kudzora kupararira kwema photon lateral uye kuwedzera simba (senge ridge waveguides uye buried heterojunctions). Laser inoshandisa dhizaini ye heat sink uye inosarudza zvinhu zvinopisa zvakanyanya (senge copper-tungsten alloy) kuti iparadze kupisa nekukurumidza, izvo zvinogona kudzivirira wavelength drift inokonzerwa nekupisa zvakanyanya. Zvichienderana nechimiro chavo uye mamiriro ekushandiswa, semiconductor lasers dzinogona kupatsanurwa muzvikamu zvina zvinotevera:

Laser Inoburitsa Mupendero (EEL)

Laser inobuda kubva pamusoro pechipunu chiri padivi pechipunu, ichigadzira nzvimbo yakaita sedenderedzwa (ine Angle yekusiyana kweinenge 30°×10°). Marefu enguva akajairika anosanganisira 808nm (yekupomba), 980 nm (yekutaurirana), uye 1550 nm (yekutaurirana kwefiber). Inoshandiswa zvakanyanya mukucheka kweindasitiri nesimba guru, masource ekupomba fiber laser, uye manetwork ekubatanidza optical communication backbone.

2. Laser Inoburitsa Mvura Yakamira (VCSEL)

Laser inoburitswa yakamira pamusoro pechip, ine denderedzwa uye symmetrical beam (divergence Angle <15°). Inobatanidza distributed Bragg reflector (DBR), zvichibvisa kudiwa kweexternal reflector. Inoshandiswa zvakanyanya mu3D sensing (senge mobile phone face recognition), short-range optical communication (data centers), uye LiDAR.

3. Quantum Cascade Laser (QCL)

Zvichibva pakuchinja kwemaerekitironi pakati pequantum Wells, wavelength inofukidza mid-to-far-infrared range (3-30 μm), pasina chikonzero chekuchinja kwevanhu. Maphoton anogadzirwa kuburikidza nekuchinja kweintersubband uye anowanzo shandiswa mukushandiswa kwakadai sekunzwa gas (senge CO₂ detection), terahertz imaging, uye Environmental Monitoring.

4. Laser Inogadziriswa

Dhizaini yekunze yelaser inogadziriswa (girasi/prism / MEMS mirror) inogona kuwana huwandu hwehurefu hwe ±50 nm, ine hupamhi hwakatetepa (<100 kHz) uye chiyero chekuramba chakakwira (>50 dB). Inowanzoshandiswa mumabasa akadai se dense wavelength division multiplexing (DWDM) communication, spectral analysis, uye biomedical imaging. Semiconductor lasers inoshandiswa zvakanyanya mumidziyo yelaser yekutaurirana, michina yekuchengetedza laser yedhijitari, michina yekugadzirisa laser, michina yekumaka uye yekurongedza laser, laser typesetting nekudhinda, michina yekurapa yelaser, laser distance and collimation detection instruments, laser instruments nemidziyo yekuvaraidza nekudzidzisa, laser components nezvikamu, nezvimwewo. Ndezvezvikamu zvikuru zveindasitiri yelaser. Nekuda kwemhando dzakasiyana dzemashandisirwo ayo, kune mhando dzakawanda nevagadziri velaser. Pakusarudza, inofanira kunge yakavakirwa pane zvinodiwa chaizvo neminda yekushandisa. Vagadziri vakasiyana vane mashandisirwo akasiyana muminda yakasiyana, uye kusarudzwa kwevagadziri nemalaser kunofanirwa kuitwa zvichienderana nenzvimbo chaiyo yekushandisa yepurojekiti.