Maumbirwo eInGaAs Photodetector

Maumbirwo eInGaAs Photodetector
Kubva kuma1980, vaongorori vanga vachidzidza nezvemagadzirirwo eInGaAs photodetectors, ayo anogona kupfupikiswa mumhando nhatu huru: InGaAs metal semiconductor metalphotodetectors(MSM-PD), InGaAsZvishandiso zvePIN zvinoongorora mifananidzo(PIN-PD), uye InGaAsmaavalanche photodetectors(APD-PD). Kune misiyano yakakura mukugadzirwa uye mutengo weInGaAs photodetectors dzine maumbirwo akasiyana, uye kunewo misiyano mikuru mukushanda kwemudziyo.
Dhiyagiramu yemufananidzo weInGaAs metal semiconductor metal photodetector structure inoratidzwa mumufananidzo, inova chivakwa chakakosha chakavakirwa paSchottky junction. Muna 1992, Shi nevamwe vake vakashandisa tekinoroji yesimbi ine simba shoma organic vapor phase epitaxy (LP-MOVPE) kukura epitaxial layers nekugadzirira InGaAs MSM photodetectors. Mudziyo uyu une responsivity yakakwira ye0.42 A/W pawavelength ye1.3 μ m uye dark current isingasviki 5.6 pA/μ m² pa1.5 V. Muna 1996, vaongorori vakashandisa gas-phase molecular beam epitaxy (GSMBE) kukura InAlAs InGaAs InP epitaxial layers, iyo yakaratidza high resistivity characteristics. Mamiriro ekukura akagadziriswa kuburikidza nekuyera kweX-ray diffraction, zvichikonzera kusawirirana kwe lattice pakati peInGaAs neInAlAs layers mukati me1 × 10 ⁻ ³. Nekuda kweizvozvo, mashandiro emuchina akagadziriswa, nerima remagetsi riri pasi pe0.75 pA/μ m² pa10 V uye mhinduro yekukurumidza ye16 ps pa5 V. Kazhinji, MSM structure photodetector ine chimiro chiri nyore uye chiri nyore kubatanidza, ichiratidza rima remagetsi rakaderera (pA level), asi electrode yesimbi inoderedza nzvimbo inoshanda yekupinza chiedza chemuchina, zvichikonzera kuderera kwekupindura kana tichienzanisa nezvimwe zvivakwa.

InGaAs PIN photodetector ine chikamu chemukati chakaiswa pakati pechikamu cheP-type contact nechikamu cheN-type contact, sezvakaratidzwa mumufananidzo, izvo zvinowedzera upamhi hwenzvimbo yekuderera, nokudaro zvichiburitsa maerekitironi akawanda uye kugadzira photocurrent yakakura, nokudaro zvichiratidza electronic conductivity yakanaka kwazvo. Muna 2007, vaongorori vakashandisa MBE kugadzira zvikamu zve buffer zvinodziya zvishoma, zvichivandudza kuomarara kwenzvimbo uye kukunda kusawirirana kwe lattice pakati peSi neInP. Vakabatanidza InGaAs PIN structures paInP substrates vachishandisa MOCVD, uye kushanda kwemudziyo kwaive kungangoita 0.57 A/W. Muna 2011, vaongorori vakashandisa PIN photodetectors kugadzira mudziyo weLiDAR wemafirimu wepfupi wekufamba, kudzivirira zvipingamupinyi/kugongana, uye kuona/kuzivikanwa kwemotokari diki dzisina vanhu pasi. Mudziyo uyu wakabatanidzwa ne microwave amplifier chip inodhura zvishoma, zvichivandudza zvikuru signal-to-noise ratio yeInGaAs PIN photodetectors. Pachishandiswa izvi, muna 2012, vaongorori vakashandisa mudziyo uyu wekufungidzira weLiDAR kumarobhoti, ane nzvimbo yekuona inodarika mamita makumi mashanu uye resolution yakawedzera kusvika 256 × 128.
InGaAs avalanche photodetector rudzi rwe photodetector ine gain, sezvakaratidzwa mu structure diagram. Ma electron hole pairs anowana simba rakakwana pasi pekushanda kwe electric field mukati me doubling region, uye anobonderana nemaatomu kuti agadzire ma electron hole pairs matsva, zvichigadzira avalanche effect uye kupeta kaviri non-equilibrium charge carriers muzvinhu. Muna 2013, vaongorori vakashandisa MBE kuti vakure lattice matched InGaAs and InAlAs alloys paInP substrates, vachichinja carrier energy kuburikidza nekuchinja mu alloy composition, epitaxial layer thickness, uye doping, zvichiwedzera electroshock ionization ukuwo zvichideredza hole ionization. Pasi pe equivalent output signal gain, APD inoratidza ruzha rwakaderera uye dark current yakaderera. Muna 2016, vaongorori vakagadzira 1570 nm laser active imaging experimental platform yakavakirwa paInGaAs avalanche photodetectors. Internal circuit yeChinoongorora mufananidzo cheAPDManzwi akagamuchirwa uye anoburitsa zvakananga masaini edhijitari, zvichiita kuti mudziyo wese uve mudiki. Mhedzisiro yekuyedza inoratidzwa muMifananidzo (d) na (e). Mufananidzo (d) mufananidzo chaiwo wechinangwa chemufananidzo, uye Mufananidzo (e) mufananidzo wedaro rine mativi matatu. Zvinogona kuonekwa zvakajeka kuti nzvimbo yehwindo muZone C ine daro rakati repakati kubva kuZones A na B. Iyi puratifomu inowana upamhi hwepulse husingasviki 10 ns, simba repulse rimwe rinogadziriswa (1-3) mJ, angle yekuona ye2 ° yemalenzi anotumira nekugamuchira, chiyero chekudzokorora che1 kHz, uye chiyero cheduty detector cheinenge 60%. Nekuda kwekuwedzera kwemukati kwephotocurrent, mhinduro inokurumidza, saizi yecompact, kugara kwenguva refu, uye mutengo wakaderera weAPD, maAPD photodetectors anogona kuwana chiyero chekuona chakakwira kupfuura maPIN photodetectors. Saka, parizvino radar yelaser inonyanya kushandisa maavalanche photodetectors.