Tsvagiridzo yazvino yeavalanche photodetector

Tsvagiridzo yazvino yechinhu chinoona mafashamo emvura

Tekinoroji yekuona ma infrared inoshandiswa zvakanyanya mukuongorora kwemauto, kutarisa nharaunda, kuongororwa kwezvirwere nedzimwe nzvimbo. Zvishandiso zvechinyakare zve infrared zvine zvimwe zvisingakwanisike pakushanda, zvakaita sekunzwa kwekuona, kumhanya kwekupindura nezvimwewo. Zvinhu zveInAs/InAsSb Class II superlattice (T2SL) zvine hunhu hwakanaka hwe photoelectric uye kugona kugadziriswa, zvichiita kuti zvive zvakanaka kune zvinoongorora ma infrared (LWIR) kwenguva refu. Dambudziko rekusapindura zvakanaka mukuona ma infrared mafungu marefu rave riri dambudziko kwenguva yakareba, izvo zvinoderedza zvikuru kuvimbika kwezvishandiso zvemagetsi. Kunyangwe avalanche photodetector (Chinoongorora mufananidzo cheAPD) ine simba rakanaka kwazvo rekupindura, ine dambudziko rerima rakawanda panguva yekuwanda.

Kuti vagadzirise matambudziko aya, timu inobva kuYunivhesiti yeSainzi yeMagetsi neTekinoroji yeChina yakabudirira kugadzira high-performance Class II superlattice (T2SL) long-wave infrared avalanche photodiode (APD) yeInAs/InAsSb T2SL absorber layer yakaderera. Vaongorori vakashandisa lower auger recombination rate yeInAs/InAsSb T2SL absorber layer kuderedza dark current. Panguva imwe chete, AlAsSb ine low k value inoshandiswa se multiplier layer kudzvinyirira ruzha rwechishandiso uku ichichengetedza gain yakakwana. Dhizaini iyi inopa mhinduro inovimbisa yekusimudzira kuvandudzwa kwetekinoroji yekuona infrared yewave refu. Detector inoshandisa dhizaini ine matanho akatevedzana, uye nekugadzirisa composition ratio yeInAs neInAsSb, kushanduka kwakapfava kwechimiro chebhendi kunowanikwa, uye mashandiro e detector anovandudzwa. Panyaya yekusarudza zvinhu uye maitiro ekugadzirira, chidzidzo ichi chinotsanangura zvakadzama nzira yekukura uye ma process parameters eInAs/InAsSb T2SL zvinhu zvinoshandiswa kugadzirira detector. Kuona composition uye ukobvu hweInAs/InAsSb T2SL kwakakosha uye kugadzirisa parameter kunodiwa kuti uwane stress balance. Panyaya yekuona ma infrared enguva refu, kuti uwane wavelength yakafanana neInAs/GaSb T2SL, InAs/InAsSb T2SL yakakora inodiwa nguva imwe chete. Zvisinei, monocycle yakakora inokonzera kudzikira kwe absorption coefficient munzira yekukura uye kuwedzera kwe effective mass yemaburi muT2SL. Zvakaonekwa kuti kuwedzera Sb component kunogona kuita cutoff wavelength yakareba pasina kuwedzera zvakanyanya ukobvu hwe single period. Zvisinei, Sb composition yakawandisa inogona kutungamira mukuparadzaniswa kweSb elements.

Saka, InAs/InAs0.5Sb0.5 T2SL ine boka reSb 0.5 yakasarudzwa sechikamu chinoshanda cheAPDmudziyo wekuona fotoInAs/InAsSb T2SL inonyanya kukura paGaSb substrates, saka basa reGaSb mukugadzirisa strain rinofanira kufungwa nezvaro. Chaizvoizvo, kuwana strain equilibrium kunosanganisira kuenzanisa avhareji ye lattice constant ye superlattice kwenguva imwe chete ne lattice constant ye substrate. Kazhinji, tensile strain muInAs inobhadharwa ne compressive strain inounzwa neInAsSb, zvichikonzera InAs layer yakakora kupfuura InAsSb layer. Chidzidzo ichi chakayera photoelectric response characteristics ye avalanche photodetector, kusanganisira spectral response, dark current, noise, nezvimwewo, uye chakasimbisa kushanda kwe stepted gradient layer design. Avalanche multiplication effect ye avalanche photodetector inoongororwa, uye hukama huripo pakati pe multiplication factor nesimba re incident light, tembiricha nezvimwe zvinokurukurwa.

Mufananidzo (A) Dhiyagiramu yeInAs/InAsSb inoongorora infrared APD ine mafungu marefu; (B) Dhiyagiramu yemagetsi yemagetsi padanho rega rega reAPD inoongorora photodetector.