Chimiro che Ingaas Photodetector

Chimiro cheIngaas Photodetector

Kubva ma1980s, vanotsvaga kumba uye kunze kwenyika vakadzidza chimiro che Ingaas Photodetectors, iyo inonyanya kukamurwa kuita mhando nhatu. Ivo vari kufanana mimbi-semiconductor-simbi Photodetector (MSM-PD), Ingaas Pin Phyddetector (Pin-PD), uye Ingaas Avantector (APD-PD). Kune mutsauko wakakosha mukuita maitiro uye mutengo weiyo Ingaas PhotoDectorscors nezvimiro zvakasiyana, uye kunewo misiyano mikuru mukuita kwemudziyo.

Iyo Ingaas Metal-Semiconductor-MetalPhotomdetector, inoratidzwa mumufananidzo (a), chimiro chakakosha chakavakirwa pane schottky junction. Muna 1992, shi et al. Yakashandiswa kuderera kudzvinyirira simbi-organc vapor phatsi epitacustomer (lp-movpe) yekugadzirira gadziriso ye1.3 Inoshandiswa gasi pheti molecular beam epitaxy (GSMBE) kuti ikure iyo intalas-ingaas-inp epitaxy layer. Iyo intalas yakapa humbowo hwekupokana, uye mamiriro ekukura akagadziridzwa neX-ray fifraction kuyerwa, kuitira kuti Latce mismatch pakati peiyaas uye intalas zvikamu zvaive mukati meiyo 1 × 10⁻³. Mhedzisiro iyi yakavezwa yekushandisa ine rima iripo pazasi 0,75 PA - PAμm² pa10 v Uye zviri nyore kuderedza nzvimbo inowedzera

Iyo Ingaas Pin Phymdodector inoisa intrinsic layer pakati peP-Type conney dunhu, sekuratidzwa kwehupamhi hwemagetsi. Muna 2007, a.Poloczek et al. Yakashandiswa MBE kukurira yakaderera-tembiricha buffer layer yekuvandudza mamiriro ekunze uye kukunda iyo latice mismatch pakati pe si uye inp. MocVD aishandiswa kuunganidza ingaas pini yePini paInp Substrate, uye kutevedzera kwechishandiso kwaive kwe0.57A / w. Muna 2011, muuto wekutsvagisa laboratory (ALR) akashandiswa Pin Photodecetectors kuti vadzidze kugadzirwa kweMicrowave. Pahwaro uhwu, muna 2012, ALR akashandisa iyi yeLidar mahomboja emarobhoti, ane huwandu hwekuona hwakawanda kupfuura makumi mashanu emamita uye kugadziriswa kwe256 × 128.

Iyo IngaasAvalanche PhotodetectorIrudzi rwepamota ye photodetector nemufaro, chimiro chacho chinoratidzwa mumufananidzo (c). Magetsi-elektron-gomba anowana simba rakakwana pasi pechisimba mumunda wemagetsi mukati medenderedzwa, kuti aumbe zvinhu zvitsva zvegari, gadzira mutambi wevasina kuenzana mune izvo zvinyorwa. Muna 2013, George m akashandisa MBE kukurira lattice yakaenzana ingaas uye intalas yeiyo inp Subhts Ku yakaenzana chiratidzo chekubuda chiratidzo, APD inoratidza ruzha rwezasi uye yakaderera rima razvino. Muna 2016, zuva jianfeng et al. Akavaka seti ye1570 nm laser anoshanda achifungidzira muyedzo wekuyedza zvichienderana neiyo Ingaas Avantector. Dunhu remukati reAPD PhotosDetectoryakagashirwa nekes uye zvakananga zvinobuda madhiri masaini, zvichiita kuti mudziyo wese uzive. Mhedzisiro yekuedza inoratidzwa muPi. (d) uye (e). Mufananidzo (d) mufananidzo wepanyama weiyo fungidziro tarisiro, uye nhamba (e) ndeye matatu-dimensional chinhambwe chifananidzo. Zvinogona kunyatsoonekwa kuti nzvimbo yepawindo yenzvimbo c ine imwe yakadzika nzvimbo ine nzvimbo A uye B. Iyo platform inoziva pulse upamhi pasi pegumi ns, single pulse simba (1 ~ 3) MJ Kutenda kuAPD's's yemukati Focicurgs, Sport mhinduro, Kukura Kwemhando, Kugadziriswa Kwemhando, saka iyo yazvino Lidar inonyanya kutongwa neAVELANCE MATEDETECECECECECS.

Zvizere, nekukura nekukurumidza kwe tekinoroji yekugadzirira kumba uye kune dzimwe nyika, isu tinokwanisa kushandisa njanji, tekinoroji yekugadzirira nzvimbo yakakwirira-ingency Ingaaas Photodecersors LOWR REMBORA REMBER uye YEMAHARA YEMAHARA, YEMAHARA YEMAHARA. Kudzikisira kwemberi kweiyo Ingaas Photodetectors kuchatarisa pazvinhu zviviri zvinotevera: (1) Ingaas Epitaxial Layer Yakakura zvakananga pane substrate. Parizvino, mazhinji emidziyo ye microelectronic ari mumusika ari kubva kuna Si yakavakirwa, uye inotevera yakabatanidzwa kuvandudza kwe Inyaas naSi yakavakirwa ndiwo maitiro akajairika. Kugadzirisa matambudziko akadai saLatice Mismatch uye anowedzera kuwedzera musiyano wakakosha wekudzidza kwe Inyaas / si; (2) Iyo 1550 NM Wave wave wave Nekuwedzera kwezvidimbu, iyo latice mismatch pakati peInf Substrate uye Ingaas Epitaxial Lafferes