Maumbirwo eInGaAs photodetector

Maumbirwo eInGaAs photodetector

Kubva kuma1980, vaongorori vari munyika nekunze kwenyika vakaongorora maumbirwo emaInGaAs photodetectors, ayo akakamurwa kuita mhando nhatu. Iwo ndeeInGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), uye InGaAs Avalanche Photodetector (APD-PD). Kune misiyano yakakura mukugadzirwa uye mutengo wemaInGaAs photodetectors ane maumbirwo akasiyana, uye kune misiyano mikuru mukushanda kwemidziyo.

Isimbi-semiconductor-simbi yeInGaAsmudziyo wekuona foto, inoratidzwa muMufananidzo (a), chimiro chakakosha chakavakirwa paSchottky junction. Muna 1992, Shi nevamwe vake vakashandisa tekinoroji yesimbi-organic vapor phase epitaxy (LP-MOVPE) yekukudza epitaxy layers uye vakagadzirira InGaAs MSM photodetector, ine A high responsiveness ye0.42 A/W pawavelength ye1.3 μm uye dark current yakaderera pane 5.6 pA/ μm² pa1.5 V. Muna 1996, zhang nevamwe vake vakashandisa gas phase molecular beam epitaxy (GSMBE) kukudza InAlAs-InGaAs-InP epitaxy layer. InAlAs layer yakaratidza high resistivity characteristics, uye mamiriro ekukura akagadziriswa nekuyerwa kweX-ray diffraction, zvekuti lattice mismatch pakati peInGaAs neInAlAs layers yaive mukati me1×10⁻³. Izvi zvinoita kuti mudziyo ushande zvakanaka nerima riri pasi pe0.75 pA/μm² pa10 V uye mhinduro yekukurumidza inosvika 16 ps pa5 V. Kazhinji, MSM structure photodetector iri nyore uye iri nyore kubatanidza, ichiratidza rima riri pasi (pA order), asi simbi electrode inoderedza nzvimbo inoshanda yekupinza chiedza chemudziyo, saka mhinduro yacho yakaderera pane dzimwe zvivako.

InGaAs PIN photodetector inoisa chikamu chemukati pakati pechikamu cheP-type contact nechikamu cheN-type contact, sezvakaratidzwa muMufananidzo (b), izvo zvinowedzera upamhi hwenzvimbo yekuderera, nokudaro zvichiburitsa maerekitironi akawanda uye kugadzira photocurrent yakakura, saka ine mashandiro akanaka ekufambisa maerekitironi. Muna 2007, A.Poloczek nevamwe vakashandisa MBE kugadzira chikamu chebuffer chekupisa kwakaderera kuti vavandudze kuomarara kwepadenga uye kukunda kusawirirana kwelattice pakati peSi neInP. MOCVD yakashandiswa kubatanidza InGaAs PIN structure paInP substrate, uye kupindura kwemudziyo kwaive kungangoita 0.57A /W. Muna 2011, Army Research Laboratory (ALR) yakashandisa maPIN photodetectors kuti vadzidze liDAR imager yekufamba, kudzivirira zvipingamupinyi/kugongana, uye kuona/kuziva zvinangwa zvemotokari diki dzisina vanhu pasi, dzakabatanidzwa ne microwave amplifier chip inodhura zvishoma iyo yakavandudza zvakanyanya signal-to-noise ratio yeInGaAs PIN photodetector. Pachishandiswa izvi, muna 2012, ALR yakashandisa mufananidzo uyu we liDAR kumarobhoti, ane nzvimbo yekuona inodarika 50 m uye resolution ye256 × 128.

MaInGaAschinhu chinoona mafashamo emvuraimhando ye photodetector ine gain, chimiro chayo chinoratidzwa muMufananidzo (c). Electron-hole pair inowana simba rakakwana pasi pekushanda kwemagetsi mukati menzvimbo inopetwa kaviri, zvekuti inobonderana neatomu, kugadzira ma electron-hole pairs matsva, kugadzira avalanche effect, uye kuwanza non-equilibrium carriers mune zvinhu. Muna 2013, George M akashandisa MBE kukura lattice matched InGaAs neInAlAs alloys pane InP substrate, achishandisa shanduko mu alloy composition, epitaxial layer thickness, uye doping kune modulated carrier energy kuti iwedzere electroshock ionization uku ichideredza hole ionization. Pa equivalent output signal gain, APD inoratidza ruzha rwakaderera uye dark current yakaderera. Muna 2016, Sun Jianfeng nevamwe vake vakagadzira seti ye1570 nm laser active imaging experimental platform yakavakirwa paInGaAs avalanche photodetector. Internal circuit yeChinoongorora mufananidzo cheAPDManzwi akagamuchirwa uye anoburitsa zvakananga masaini edhijitari, zvichiita kuti mudziyo wese uve mudiki. Mhedzisiro yekuyedza inoratidzwa muMufananidzo (d) na (e). Mufananidzo (d) mufananidzo chaiwo wechinangwa chemufananidzo, uye Mufananidzo (e) mufananidzo wedaro rine mativi matatu. Zvinogona kuonekwa zvakajeka kuti nzvimbo yehwindo yenzvimbo c ine daro rakati repakati nepakati penzvimbo A na b. Puratifomu iyi inogonesa pulse width iri pasi pe10 ns, simba repulse rimwe chete (1 ~ 3) mJ rinogadziriswa, nzvimbo yekugamuchira lens Angle ye2°, frequency yekudzokorora ye1 kHz, chiyero chebasa re detector cheinenge 60%. Nekuda kwekuwedzera kwemukati kwe photocurrent yeAPD, kukurumidza kupindura, saizi yecompact, kugara kwenguva refu uye mutengo wakaderera, ma photodetector eAPD anogona kunge akakwira zvakanyanya muhuwandu hwekuona kupfuura ma PIN photodetectors, saka liDAR yazvino inonyanya kudzorwa nema avalanche photodetectors.

Zvose, nekukura nekukurumidza kwetekinoroji yekugadzirira yeInGaAs munyika nekune dzimwe nyika, tinogona kushandisa MBE, MOCVD, LPE nedzimwe tekinoroji neunyanzvi kugadzirira InGaAs epitaxial layer yepamusoro-soro panzvimbo huru paInP substrate. InGaAs photodetectors inoratidza rima rakaderera uye high response, rima rakaderera rakaderera pane 0.75 pA/μm², high response ability inosvika 0.57 A/W, uye ine fast transient response (ps order). Kukura kweInGaAs photodetectors mune ramangwana kuchatarisa pazvinhu zviviri zvinotevera: (1) InGaAs epitaxial layer inokura zvakananga paSi substrate. Parizvino, midziyo mizhinji ye microelectronic mumusika inoenderana neSi, uye kusimudzirwa kwakabatana kweInGaAs neSi based ndiyo nzira yakajairika. Kugadzirisa matambudziko akadai se lattice mismatch uye thermal expansion coefficient difference kwakakosha pakudzidza InGaAs/Si; (2) Tekinoroji yehukuru hwe1550 nm yakura, uye kureba kwewavelength (2.0 ~ 2.5) μm ndiyo nzira yekutsvagisa mune ramangwana. Nekuwedzera kwezvikamu zveIn, kusawirirana kwelattice pakati peInP substrate neInGaAs epitaxial layer kuchaita kuti pave nekukanganisika kwakanyanya uye zvikanganiso, saka zvakakosha kugadzirisa maparamita ekushanda kwemudziyo, kuderedza zvikanganiso zvelattice, uye kuderedza dark current yemudziyo.