Chimiro cheInGaAs photodetector

Chimiro cheInGaAs photodetector

Kubva kuma1980, vatsvakurudzi vekumba nekune dzimwe nyika vakadzidza chimiro cheInGaAs photodetectors, iyo inonyanya kugoverwa kuva marudzi matatu. Iwo maInGaAs simbi-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), uye InGaAs Avalanche Photodetector (APD-PD). Pane misiyano yakakura mukugadzira uye mutengo weInGaAs mafotodetectors ane akasiyana zvimiro, uye kune zvakare misiyano mikuru mukuita kwechishandiso.

Iyo InGaAs simbi-semiconductor-simbiphotodetector, inoratidzwa muMufananidzo (a), chimiro chakakosha chakavakirwa paSchottky junction. Muna 1992, Shi et al. yakashandisa low pressure metal-organic vapor phase epitaxy technology (LP-MOVPE) kukura epitaxy layers uye yakagadzirirwa InGaAs MSM photodetector, ine A high responsiveness ye 0.42 A/W pakureba kwe1.3 μm uye yakasviba ikozvino yakaderera kupfuura 5.6 pA/ μm² pa1.5 V. Muna 1996, zhang et al. yakashandisa gasi chikamu molecular beam epitaxy (GSMBE) kukura iyo InAlAs-InGaAs-InP epitaxy layer. Iyo InAlAs layer yakaratidza yakakwirira resistivity maitiro, uye mamiriro ekukura akagadziridzwa neX-ray diffraction kuyerwa, kuitira kuti lattice mismatch pakati InGaAs uye InAlAs layers yaive mukati meiyo 1 × 10⁻³. Izvi zvinoguma nekuita kwakakwenenzverwa kwechishandiso chine rima riri pazasi 0.75 pA/μm² pa10 V uye nekukurumidza mhinduro yechinguvana kusvika ku16 ps pa5 V. Pakazara, iyo MSM chimiro chefotodetector iri nyore uye iri nyore kubatanidza, ichiratidza rima rakadzika ikozvino (pA. kurongeka), asi iyo electrode yesimbi inoderedza iyo inoshanda mwenje yekunyudza nzvimbo yemudziyo, saka mhinduro yakaderera pane mamwe maumbirwo.

InGaAs PIN photodetector inoisa intrinsic layer pakati peP-type contact layer neN-type contact layer, sezvinoratidzwa mumufananidzo (b), iyo inowedzera hupamhi hwedunhu rekuderera, nokudaro ichipenya mamwe maelectron-hole pairs uye kugadzira a. yakakura photocurrent, saka ine yakanakisa electron conduction performance. Muna 2007, A.Poloczek et al. yakashandisa MBE kukura yakadzika-tembiricha buffer layer yekuvandudza kushata kwepamusoro uye kukunda kusawirirana kwereti pakati peSi neInP. MOCVD yakashandiswa kubatanidza InGaAs PIN chimiro pane InP substrate, uye kupindura kwechishandiso kwaive kunosvika 0.57A / W. Muna 2011, Army Research Laboratory (ALR) yakashandisa maPIN photodetectors kudzidza mufananidzo weliDAR wekufambisa, chipingamupinyi/kunzvenga kudhumhana, uye kuona/kuzivikanwa kwechinangwa chenguva pfupi-pfupi yemotokari dzepasi dzisina munhu, dzakabatanidzwa neinodhura-yakaderera microwave amplifier chip iyo. yakavandudza zvakanyanya chiratidzo-ku-ruzha reshiyo yeInGaAs PIN photodetector. Pahwaro uhwu, muna 2012, ALR yakashandisa iyi liDAR imager kumarobhoti, iine huwandu hwekuona hunodarika 50 m uye resolution ye256 × 128.

Iyo InGaAsAvalanche photodetectorimhando yephotodetector ine pfuma, chimiro chayo chinoratidzwa muFigure (c). Iwo ma electron-hole maviri anowana simba rakakwana pasi pekuita kwemunda wemagetsi mukati medunhu rinopetwa kaviri, kuitira kudhumhana neatomu, kuburitsa ma electron-hole pairs, kuumba avalanche effect, uye kuwanza vatakuri vasina-equilibrium muzvinhu. . Muna 2013, George M akashandisa MBE kurima lattice inofananidzwa neInGaAs neInAlAs alloys paInP substrate, vachishandisa shanduko mukuumbwa kwealloy, epitaxial layer thickness, uye doping kune modulated carrier simba kuti kuwedzere electroshock ionization uku uchideredza gomba ionization. Pane yakaenzana yekubuda chiratidzo kuwana, APD inoratidza yakaderera ruzha uye yakaderera yakasviba ikozvino. Muna 2016, Sun Jianfeng et al. yakagadzira seti ye1570 nm laser inoshanda yekufungidzira yekuyedza chikuva yakavakirwa paInGaAs avalanche photodetector. Dunhu remukati reAPD photodetectoryakagashira echoes uye yakananga kuburitsa masaini edhijitari, zvichiita kuti mudziyo wese compact. Migumisiro yekuedza inoratidzwa muFIG. (d) uye (e). Figure (d) ipikicha yemuviri weiyo yekufungidzira tarisiro, uye Chifananidzo (e) chifananidzo chetatu-dimensional chinhambwe. Zvinogona kuonekwa zvakajeka kuti nzvimbo yehwindo yenzvimbo c ine imwe nzvimbo yakadzika ine nzvimbo A uye b. Iyo puratifomu inoziva pulse hupamhi isingasviki gumi ns, imwechete pulse simba (1 ~ 3) mJ inogadziriswa, inogamuchira lens munda Angle ye2 °, kudzokorora frequency ye1 kHz, detector basa reshiyo inosvika makumi matanhatu%. Nekuda kweiyo APD yemukati mafotocurrent kuwana, kukurumidza kupindura, compact saizi, kusimba uye yakaderera mutengo, APD mafotodetectors anogona kuve ehupamhi hwepamusoro muyero yekuonekwa kupfuura PIN photodetectors, saka yazvino mainstream liDAR inonyanya kutungamirwa neavalanche photodetectors.

Pakazere, nekukurumidza kukura kweInGaAs kugadzirira tekinoroji kumba nekune dzimwe nyika, tinogona kushandisa zvine hunyanzvi MBE, MOCVD, LPE uye mamwe matekinoroji kugadzirira yakakura-nzvimbo yepamusoro InGaAs epitaxial layer paInP substrate. InGaAs mafotodetectors anoratidza yakadzikira yakasviba ikozvino uye yakakwirira kudaira, iyo yakadzikira yakasviba ikozvino yakaderera pane 0.75 pA/μm², iyo yakanyanya kupindura inosvika 0.57 A/W, uye ine inokurumidza kukurumidza mhinduro (ps kurongeka). Kuvandudzwa kwemangwana kweInGaAs photodetectors kuchatarisa pane zvinotevera zvinhu zviviri: (1) InGaAs epitaxial layer inokura zvakananga paSi substrate. Parizvino, mazhinji emagetsi emagetsi ari pamusika akavakirwa paSi, uye iyo inotevera yakabatanidzwa kusimudzira yeInGaAs uye Si yakavakirwa ndiyo yakajairika maitiro. Kugadzirisa matambudziko senge lattice mismatch uye thermal yekuwedzera coefficient musiyano wakakosha pakudzidza kweInGaAs/Si; (2) Iyo 1550 nm wavelength tekinoroji yave yakakura, uye yakawedzera wavelength (2.0 ~ 2.5) μm ndiyo nzira yekutsvagisa yeramangwana. Nekuwedzera kweMuzvikamu, iyo lattice mismatch pakati peInP substrate uye InGaAs epitaxial layer inotungamira kune yakakomba dislocation uye kuremara, saka zvinodikanwa kukwirisa maparamita echishandiso, kuderedza kukanganiswa kwelattice, uye kuderedza mudziyo wakasviba ikozvino.