Kune silicon-based optoelectronics, silicon photodetectors (Si photodetector)

Kune silicon-based optoelectronics, silicon photodetectors

Photodetectorsshandura zviratidzo zvechiedza kuva zviratidzo zvemagetsi, uye sezvo mazinga ekufambisa data anoramba achivandudza, high-speed photodetectors yakabatanidzwa nesilicon-based optoelectronics platforms yakave yakakosha kune inotevera-chizvarwa data centers uye telecommunications network. Ichi chinyorwa chinopa mhedziso yemhando yepamusoro-yekukurumidza mafotodetectors, nekusimbisa pasilicon based germanium (Ge kana Si photodetector)silicon photodetectorskune yakasanganiswa optoelectronics tekinoroji.

Germanium chinhu chinoyevedza chekuona pedyo ne infrared chiedza pamapuratifomu esilicon nekuti inoenderana neCMOS maitiro uye ine kunyura kwakasimba zvakanyanya panharembozha wavelengths. Iyo inonyanya kuzivikanwa Ge/Si photodetector chimiro ipini diode, umo iyo intrinsic germanium inoiswa sandwich pakati penzvimbo dzeP-mhando neN-mhando.

Chimiro chemudziyo Mufananidzo 1 unoratidza yakajairwa vertical pini Ge kanaNdiwo photodetectorchimiro:

Zvinhu zvikuru zvinosanganisira: germanium inonwisa layer yakakura pasilicon substrate; Inoshandiswa kuunganidza p uye n contacts of charge carriers; Waveguide coupling yekubata kwemwenje kunoshanda.

Epitaxial kukura: Kukura yemhando yepamusoro germanium pasilicon zvinonetsa nekuda kwe4.2% lattice mismatch pakati pezvinhu zviviri izvi. Kukura kwematanho maviri kunowanzo shandiswa: tembiricha yakaderera (300-400°C) buffer layer kukura uye tembiricha yepamusoro (inodarika 600°C) deposition yegermanium. Iyi nzira inobatsira kudzora ma threading dislocation anokonzerwa nelattice mismatches. Post-kukura annealing pa 800-900 ° C inowedzera kuderedza threading dislocation density kusvika 10 ^ 7 cm ^ -2. Maitiro ekuita: Iyo yakanyanya kumberi Ge / Si PIN photodetector inogona kubudirira: kupindura,> 0.8A / W pa1550 nm; Bandwidth,> 60 GHz; Rima ikozvino, <1 μA pa -1 V bias.

Kubatanidzwa nesilicon-based optoelectronics mapuratifomu

Kubatanidzwa kwehigh-speed photodetectorsine silicon-yakavakirwa optoelectronics mapuratifomu inogonesa advanced optical transceivers uye inobatana. Iyo miviri mikuru yekubatanidza nzira ndeyekutevera: Front-end kubatanidzwa (FEOL), uko iyo photodetector uye transistor zvinogadzirwa panguva imwe chete pasilicon substrate inobvumira kutonhora kwepamusoro-soro, asi kutora chip nzvimbo. Kubatanidzwa kwekupedzisira-kumashure (BEOL). Mafotodetectors anogadzirwa pamusoro pesimbi kudzivirira kupindira neCMOS, asi anongogumira pakudzikisa tembiricha.

Mufananidzo 2: Kupindura uye bandwidth ye-high-speed Ge/Si photodetector

Data center application

High-speed photodetectors chinhu chinokosha muchizvarwa chinotevera che data center interconnection. Zvikumbiro zvikuru zvinosanganisira: optical transceivers: 100G, 400G uye mitengo yakakwirira, uchishandisa PAM-4 modulation; Ahigh bandwidth photodetector(> 50 GHz) inodiwa.

Silicon-based optoelectronic integrated circuit: monolithic kubatanidzwa kwe detector ne modulator nezvimwe zvikamu; A compact, high-performance optical injini.

Distributed architecture: optical interconnection pakati pekuparadzirwa komputa, kuchengetedza, uye kuchengetedza; Kutyaira kudiwa kwesimba-rinoshanda, yakakwirira-bandwidth photodetectors.

Maonero eramangwana

Remangwana reyakasanganiswa optoelectronic high-speed photodetectors rinoratidza maitiro anotevera:

Higher data rates: Kutyaira kukura kwe800G uye 1.6T transceivers; Mafotodetectors ane bandwidths anopfuura 100 GHz anodiwa.

Kuvandudzwa kwekubatanidza: Single chip kubatanidzwa kweIII-V zvinhu uye silicon; Yepamberi 3D yekubatanidza tekinoroji.

Zvishandiso zvitsva: Kuongorora maviri-dimensional zvinhu (senge graphene) ye ultrafast kuona chiedza; A new Group IV alloy yekuwedzera wavelength coverage.

Emerging applications: LiDAR uye mamwe maapplication ekunzwa ari kutyaira kusimudzira kweAPD; Microwave photon application inoda yakakwirira mutsara mafotodetectors.

High-speed photodetectors, kunyanya Ge kana Si photodetectors, vava mutyairi mukuru wesilicon-based optoelectronics uye chizvarwa chinotevera optical communications. Kuenderera mberi kufambira mberi mune zvekushandisa, dhizaini dhizaini, uye tekinoroji yekubatanidza kwakakosha kusangana nekukura kwebandwidth zvinodiwa zveramangwana data nzvimbo uye telecommunication network. Sezvo munda uchiramba uchishanduka, tinogona kutarisira kuona mafotodetectors ane bandwidth yakakwira, ruzha rwepasi, uye kusanganisa kusanganisa nemagetsi uye mafotonic maseketi.