Kune maoptoelectronics akavakirwa pasilicon, mafoto detector esilicon (Si photodetector)

Kune maoptoelectronics akavakirwa pasilicon, ma silicon photodetectors

Photodetectorskushandura masaini echiedza kuita masaini emagetsi, uye sezvo mwero wekutamiswa kwedata uchiramba uchivandudzika, ma photodetector anomhanyisa akabatanidzwa nemapuratifomu e optoelectronics akavakirwa pasilicon ave chinhu chinokosha kune nzvimbo dzedata dzechizvarwa chinotevera uye network dzekutaurirana. Chinyorwa chino chichapa pfupiso yema photodetector anomhanyisa akakwira, achinyanya kukoshesa silicon based germanium (Ge kana Si photodetector)michina yekuona mafoto yesiliconye tekinoroji yakabatanidzwa ye optoelectronics.

Germanium chinhu chinokwezva pakuona chiedza che infrared pamapuratifomu esilicon nekuti chinoenderana nemaitiro eCMOS uye chinonyungudutsa zvakanyanya pama wavelengths ekutaurirana. Chimiro cheGe/Si photodetector chinowanzo shandiswa ipin diode, umo germanium yemukati inosanganiswa pakati penzvimbo dzeP-type neN-type.

Chimiro chemudziyo Mufananidzo 1 unoratidza pini yakajairika yakamira Ge kanaKana photodetectorchimiro:

Zvinhu zvikuru zvinosanganisira: germanium inonyudza layer inokura pasilicon substrate; Inoshandiswa kuunganidza p ne n contacts dzevanotakura charge; Waveguide coupling kuti inyudze chiedza zvakanaka.

Kukura kweEpitaxial: Kukura kwegermanium yemhando yepamusoro pasilicon kwakaoma nekuda kwekusawirirana kwe4.2% kwelattice pakati pezvinhu zviviri izvi. Maitiro ekukura ane matanho maviri anowanzo shandiswa: kukura kwekushisa kwakaderera (300-400°C) buffer layer uye germanium inoiswa pakupisa kwakakwirira (kupfuura 600°C). Nzira iyi inobatsira kudzora kupatsanurwa kweshinda kunokonzerwa nekusawirirana kwelattice. Kudzvanya kwekuwedzera mushure mekukura pa800-900°C kunoderedzawo huwandu hwekuputika kweshinda kusvika pa10^7 cm^-2. Hunhu hwekushanda: Ge/Si PIN photodetector yepamusoro inogona kuita: responsiveness, > 0.8A /W pa1550 nm; Bandwidth,>60 GHz; Dark current, <1 μA pa -1 V bias.

Kubatanidzwa nemapuratifomu e optoelectronics akavakirwa pasilicon

Kubatanidzwa kwemafoto detector anomhanya kwazvoNemapuratifomu e optoelectronics akavakirwa pasilicon, mapuratifomu aya anogonesa ma transceivers e optical epamusoro uye ma interconnects. Nzira mbiri huru dzekubatanidza ndeidzi: Front-end integration (FEOL), uko photodetector ne transistor zvinogadzirwa panguva imwe chete pane silicon substrate zvichibvumira kugadziriswa kwekupisa kwakanyanya, asi zvichitora nzvimbo ye chip. Back-end integration (BEOL). Photodetectors dzinogadzirwa pamusoro pesimbi kudzivirira kukanganiswa neCMOS, asi dzinongogumira pakudzikira kwekupisa kwekugadzirisa.

Mufananidzo 2: Kugona kupindura uye bandwidth yeGe/Si photodetector inomhanya zvikuru

Kushandiswa kwenzvimbo yedata

Ma photodetector anomhanyisa zvakanyanya chinhu chakakosha muchizvarwa chinotevera chekubatanidza data centre. Mashandisirwo makuru anosanganisira: ma optical transceivers:100G, 400G uye mitengo yakakwira, achishandisa PAM-4 modulation; Achishandiso chekuona mafoto chebandwidth yakakwira(>50 GHz) inodiwa.

Dunhu rakabatanidzwa re optoelectronic rakavakirwa pasilicon: kubatanidzwa kwe detector ne modulator nezvimwe zvikamu; Injini ye optical ine simba guru uye inoshanda zvakanyanya.

Magadzirirwo akapararira: kubatana kwemaziso pakati pemakombiyuta akapararira, nzvimbo yekuchengetera, uye nzvimbo yekuchengetera; Kukurudzira kudiwa kwema photodetectors anoshandisa simba shoma uye ane bandwidth yakawanda.

Maonero eramangwana

Remangwana rema "optoelectronic high-speed photodetectors" akabatanidzwa richaratidza mafambiro anotevera:

Mitengo yedata yakakwira: Kutungamira kugadzirwa kwematransceivers e800G ne1.6T; MaPhotodetector ane bandwidth inodarika 100 GHz anodiwa.

Kubatanidzwa kwakagadziridzwa: Kubatanidzwa kwemachipisi maviri chete ezvinhu zveIII-V nesilicon; Tekinoroji yepamusoro yekubatanidza 3D.

Zvinhu zvitsva: Kuongorora zvinhu zvine mativi maviri (senge graphene) kuti zvionekwe nechiedza nekukurumidza; Chigadzirwa chitsva cheGroup IV chekuvhara urefu hwewavelength.

Mapurogiramu ari kubuda: LiDAR nedzimwe nzira dzekunzwa dziri kukurudzira kugadzirwa kweAPD; Mapurogiramu e microwave photon anoda ma photodetector ane linearity yakakwira.

Ma photodetector anomhanyisa, kunyanya ma photodetector eGe kana Si, ave chinhu chikuru chinotungamira ma optoelectronics akavakirwa pasilicon uye kutaurirana kwe optical kwechizvarwa chinotevera. Kufambira mberi kuripo muzvinhu, dhizaini yemidziyo, uye matekinoroji ekubatanidza kwakakosha kuti kugutse zvinodiwa zve bandwidth zvenzvimbo dzedata uye network dzekutaurirana mune ramangwana. Sezvo munda wacho uchiramba uchichinja, tinogona kutarisira kuona ma photodetector ane bandwidth yakakwira, ruzha rwakaderera, uye kubatanidzwa zvakanaka nema electronic ne photonic circuits.