Mhedzisiro ye diode yesilicon carbide ine simba guru paChinoongorora Mufananidzo wePIN
PIN diode yesilicon carbide ine simba guru yagara iri imwe yenzvimbo dzinonyanya kukosha mukutsvaga kwesimba remagetsi. PIN diode ikristaro diode yakavakwa nekubatanidza layer ye intrinsic semiconductor (kana semiconductor ine huwandu hushoma hwetsvina) pakati penzvimbo yeP+ nenzvimbo yen+. Izwi rekuti i muPIN ipfupiso yeChirungu yeshoko rekuti "intrinsic", nekuti hazvigoneke kuva ne semiconductor yakachena isina tsvina, saka layer yeI yePIN diode mukushandiswa inosanganiswa nehuwandu hushoma hwetsvina yeP-type kana N-type. Parizvino, silicon carbide PIN diode inonyanya kushandisa chimiro cheMesa uye chimiro cheplane.
Kana frequency yekushanda kwePIN diode ikadarika 100MHz, nekuda kwemhedzisiro yekuchengetera yemakambani mashoma uye mhedzisiro yenguva yekufambisa muchikamu chekutanga, diode inorasikirwa nemhedzisiro yekugadzirisa uye inova chinhu che impedance, uye kukosha kwayo kwe impedance kunochinja ne voltage ye bias. Pa zero bias kana DC reverse bias, impedance muchikamu chekutanga yakakwira zvikuru. Mu DC forward bias, dunhu rekutanga rine mamiriro e impedance yakaderera nekuda kwe carrier injection. Naizvozvo, PIN diode inogona kushandiswa se variable impedance element, mumunda we microwave ne RF control, zvinowanzo dikanwa kushandisa switching devices kuti uwane signal switching, kunyanya mune dzimwe high-frequency signal control centers, PIN diodes dzine kugona kwepamusoro kweRF signal control, asiwo dzinoshandiswa zvakanyanya mu phase shift, modulation, limitating nedzimwe circuits.
Silicon carbide diode ine simba guru inoshandiswa zvakanyanya munzvimbo yemagetsi nekuda kwehunhu hwayo hwekudzivirira voltage, inonyanya kushandiswa sechubhu yekusimbisa simba ine simba guru.PIN diodeine voltage yepamusoro yeVB ine reverse critical breakdown, nekuda kwekudzikira kwe doping i pakati ichitakura kudonha kwevoltage huru. Kuwedzera ukobvu hwe zone I uye kuderedza huwandu hwe doping ye zone Ndinogona kuvandudza zvinobudirira voltage ye reverse breakdown ye PIN diode, asi kuvapo kwe zone I kuchavandudza forward voltage drop VF yemudziyo wese uye nguva yekuchinja kwechishandiso kusvika pamwero wakati, uye diode yakagadzirwa nezvinhu zve silicon carbide inogona kutsiva kushomeka uku. Silicon carbide kagumi kupfuura critical breakdown electric field ye silicon, kuitira kuti ukobvu hwe silicon carbide diode I zone hugone kuderedzwa kusvika pachikamu chimwe mugumi che silicon tube, uku uchichengetedza voltage yakakwira ye breakdown, pamwe chete ne thermal conductivity yakanaka yezvinhu zve silicon carbide, hapazovi nematambudziko ari pachena ekupisa, saka high-power silicon carbide diode yave chishandiso chakakosha chekugadzirisa magetsi mumunda wemagetsi emazuva ano.
Nekuda kwesimba rayo diki rekubuda kwemhepo (reverse leakage current) uye kufamba kwaro kwakakwira, ma silicon carbide diodes anokwezva zvikuru mukuona kwemagetsi. Kubuda kwemhepo kwakaderera kunogona kuderedza rima remuchina wekuona uye kuderedza ruzha; Kufamba kwaro kwakakwira kunogona kuvandudza kunzwa kwesilicon carbide.Chinoongorora PIN(PIN Photodetector). Hunhu hwesimba guru hwesilicon carbide diodes hunoita kuti maPIN detectors akwanise kuona chiedza chakasimba uye anoshandiswa zvakanyanya munzvimbo dzemuchadenga. Silicon carbide diode ine simba guru yave ichitariswa nekuda kwehunhu hwayo hwakanaka, uye tsvakiridzo yayo yakagadziridzwawo zvikuru.
Nguva yekutumira: Gumiguru-13-2023