Kufambira mberi kwekutsvakurudza kweInGaAs photodetector
Nekukura kwekuwedzera kwehuwandu hwekufambiswa kwedata, tekinoroji yekubatanidza yemagetsi yakatsiva tekinoroji yechinyakare yekubatanidza magetsi uye yave iyo tekinoroji yepakati uye kure-kureba-kurasikirwa kukuru-kumhanya kutapurirana. Seyo yakakosha chikamu cheiyo optical yekugamuchira yekupedzisira, iyophotodetectorine kuwedzera kwepamusoro zvinodiwa pakuita kwayo kukuru-kumhanya. Pakati pavo, iyo waveguide yakasanganiswa photodetector idiki muhukuru, yakakwira bandwidth, uye iri nyore kubatanidzwa pa-chip nemamwe maoptoelectronic zvishandiso, inova iyo yekutsvagisa inotarisa ye-high-speed photodetection. uye ndiwo anomiririra mafotodetectors ari pedyo-infrared communication band.
InGaAs ndechimwe chezvakanakira zvinhu zvekuwana yakakwirira-kumhanya uyehigh-response photodetectors. Chekutanga, InGaAs ndeye yakananga bandgap semiconductor zvinhu, uye upamhi hwayo hwebhendi hunogona kudzorwa nereshiyo pakati peIn neGa, zvichiita kuti kuonekwe kwezviratidzo zvemaziso zveavelengths akasiyana. Pakati pavo, In0.53Ga0.47As inofananidzwa zvakakwana neInP substrate lattice uye ine yakanyanyisa kupinza chiedza coefficient mu optical communication band. Ndiyo inonyanya kushandiswa mukugadzirira kwefotodetector uye zvakare ine yakanakisa yakasviba yazvino uye yekupindura kuita. Kechipiri, zvese InGaAs uye InP zvinhu zvine akakwira maelectronic drift velocities, ane mazariro erekitironi ekukukurwa kwemagetsi ese ari maviri anenge ari 1 × 107cm/s. Zvichakadaro, pasi pemasimu emagetsi chaiwo, InGaAs uye InP zvinhu zvinoratidzira electron velocity overshoot mhedzisiro, ine overshoot velocities inosvika 4 × 107cm/s uye 6 × 107cm/s zvichiteerana. Inobatsira kuwana yakakwirira kuyambuka bandwidth. Parizvino, InGaAs mafotodetectors ndiwo anonyanya kufarirwa mafotodetectors ekutaurirana kwemaziso. Zvidiki-saizi, chiitiko cheshure, uye chepamusoro-bandwidth pamusoro pechiitiko chekuongorora zvakagadziridzwa, kunyanya kushandiswa mumashandisirwo akadai sekumhanya kukuru uye kuzara kwepamusoro.
Nekudaro, nekuda kwekuganhurirwa kwemaitiro avo ekubatanidza, pamusoro pezviitiko zvinoongorora zvinonetsa kubatanidza nemamwe maoptoelectronic zvishandiso. Naizvozvo, nekuwedzera kuri kuda kwekubatanidzwa kweoptoelectronic, waveguide yakasanganiswa InGaAs mafotodetectors ane hunyanzvi hwekuita uye akakodzera kubatanidza zvishoma nezvishoma ave chinangwa chekutsvaga. Pakati pavo, yekutengesa InGaAs photodetector modules ye70GHz uye 110GHz dzinenge dzese dzinotora waveguide coupling zvimiro. Zvinoenderana nemusiyano wezvinhu zve substrate, waveguide yakasanganiswa InGaAs mafotodetectors anogona kunyanya kuiswa mumhando mbiri: INP-yakavakirwa uye Si-yakavakirwa. Iyo epitaxial yezvinhu paInP substrates ine yemhando yepamusoro uye inonyanya kukodzera kugadzirwa kwezvishandiso zvemhando yepamusoro. Nekudaro, zveIII-V zveboka zvinhu zvakakura kana kusungirirwa paSi substrates, nekuda kwekukanganisa kwakasiyana pakati peInGaAs zvinhu neSi substrates, zvinhu kana chimiro chemhando yakashata, uye pachine nzvimbo yakakura yekuvandudza mukuita kwemidziyo.
Chishandiso chinoshandisa InGaAsP pachinzvimbo cheInP sechinhu chekudzikisa dunhu. Kunyangwe ichidzikisa saturation drift velocity yemaerekitironi kune imwe nhanho, inonatsiridza kubatanidzwa kwechiedza chechiitiko kubva kune waveguide kuenda kunzvimbo yekunyura. Panguva imwecheteyo, iyo InGaAsP N-mhando yekubatanidza layer inobviswa, uye gomba diki rinoumbwa kune rumwe rutivi rweP-rudzi rwepamusoro, zvinobudirira kusimbisa chisungo pamunda wechiedza. Inobatsira kune mudziyo kuwana mhinduro yepamusoro.
Nguva yekutumira: Jul-28-2025