Kufambira Mberi Kwekutsvaga kweInGaAs photodetector

Kufambira Mberi KwekutsvagaInGaAs photodetector

Nekukura kuri kuita huwandu hwekutumira data rekutaurirana, tekinoroji yekubatanidza magirazi yakatsiva tekinoroji yekubatanidza magetsi yechinyakare uye yave tekinoroji huru yekutumira nekukurumidza kwepakati neparefu. Sechikamu chikuru chemugumo wekugamuchira magirazi, iyomudziyo wekuona fotoine zvinodiwa zvakanyanya kuti ishande nekukurumidza. Pakati pazvo, waveguide coupled photodetector idiki, ine bandwidth yakawanda, uye iri nyore kubatanidzwa pa-chip nezvimwe zvishandiso zve optoelectronic, inova ndiyo nzvimbo yekutsvagisa ye high-speed photodetection. uye ndiyo inonyanya kuratidzwa photodetectors mu near-infrared communication band.

InGaAs ndeimwe yezvinhu zvakanakisisa zvekuwana nekukurumidza uyema photodetector anopindura zvakanyanyaChekutanga, InGaAs imhando ye semiconductor yebandgap yakananga, uye upamhi hwayo hwebandgap hunogona kudzorwa nechiyero chiri pakati peIn neGa, zvichigonesa kuona masaini e optical ema wavelength akasiyana. Pakati pawo, In0.53Ga0.47As inonyatsoenderana neInP substrate lattice uye ine coefficient yakanyanya yekupinza chiedza mu optical communication band. Ndiyo inonyanya kushandiswa mukugadzirira photodetector uye ine dark current inoshamisa uye responsivity performance. Chechipiri, InGaAs neInP zvinhu zvine electron drift velocities yakakwira, ne saturated electron drift velocities dzayo dziri 1×107cm/s. Zvichakadaro, pasi pemagetsi chaiwo, InGaAs neInP zvinhu zvinoratidza electron velocity overshoot effects, ne overshoot velocities dzadzo dzinosvika 4×107cm/s uye 6×107cm/s zvichiteerana. Zvinobatsira kuwana bandwidth yepamusoro yekuyambuka. Parizvino, InGaAs photodetectors ndidzo dzinonyanya kushandiswa pakugadzira photodetectors dze optical communication. Zvishandiso zvidiki, zvinoongorora zviitiko zvemusana, uye zvinoongorora zviitiko zvemudenga zvine bandwidth yakakura zvakagadzirwawo, zvinonyanya kushandiswa mumabasa akadai sekumhanya kwakanyanya uye kuwanda kwakanyanya.

Zvisinei, nekuda kwekusakwana kwenzira dzavo dzekubatanidza, ma "surface incidence detectors" akaoma kubatanidza nemamwe ma "optoelectronic devices". Nokudaro, nekuwedzera kwekuda kwekubatanidzwa kwe "optoelectronic", ma "waveguide" akabatana neInGaAs photodetectors ane mashandiro akanaka uye akakodzera kubatanidzwa ave chinhu chinonyanya kutsvagwa. Pakati pawo, ma "commercial InGaAs photodetector modules" e70GHz ne110GHz anenge ese anoshandisa ma "waveguide coupling structures". Zvichienderana nemusiyano wezvinhu zve substrate, ma "waveguide" akabatana neInGaAs photodetectors anogona kupatsanurwa mumhando mbiri: INP-based neSi-based. Zvinhu zve epitaxial paInP substrates zvine mhando yepamusoro uye zvakakodzera kugadzirwa kwemidziyo inoshanda zvakanyanya. Zvisinei, kune zvinhu zveboka reIII-V zvakakurirwa kana kusungirirwa paSi substrates, nekuda kwekusawirirana kwakasiyana pakati pezvinhu zveInGaAs neSi substrates, mhando yezvinhu kana interface haina kunaka, uye kuchine nzvimbo yakakura yekuvandudza mashandiro emidziyo.

Mudziyo uyu unoshandisa InGaAsP pachinzvimbo cheInP senzvimbo yekudzikira kwechiedza. Kunyangwe ichideredza kumhanya kwekuyerera kwemaerekitironi kusvika pamwero wakati, inovandudza kubatana kwechiedza chinoitika kubva pawaveguide kuenda kunzvimbo yekunyudzwa. Panguva imwe chete, InGaAsP N-type contact layer inobviswa, uye mukaha mudiki unoumbwa kumativi ese eP-type surface, zvichiwedzera zvinobudirira kudziviswa kwechiedza. Zvinobatsira kuti mudziyo uwane kupindura kwakanyanya.