Zvishandiso zvekuona mifananidzo uye marefu emagetsi anocheka

Photodetectorsuye marefu enguva dzemafungu enguva dzenguva

Chinyorwa chino chinotarisa pazvinhu zvinoshandiswa ne photodetectors (kunyanya nzira yemhinduro yakavakirwa padzidziso ye band), pamwe chete nematanho akakosha uye mamiriro ekushandiswa kwezvinhu zvakasiyana-siyana zve semiconductor.
1. Musimboti wepfungwa: Photodetector inoshanda zvichibva pamhedzisiro yephotoelectric. Maphoton echiitiko anofanira kutakura simba rakakwana (rinopfuura upamhi hwebandgap Eg yezvinhu) kuti asimudzire maerekitironi kubva mubhandi revalence kuenda kubhandi rekufambisa, zvichigadzira chiratidzo chemagetsi chinoonekwa. Simba rephoton rinoenderana newavelength, saka detector ine "wavelength yakachekwa" (λ c) - wavelength yepamusoro inogona kupindura, kupfuura iyo isingagone kupindura zvinobudirira. Wavelength yakachekwa inogona kufungidzirwa uchishandisa fomura λ c ≈ 1240/Eg (nm), apo Eg inoyerwa mu eV.
2. Zvinhu zvakakosha zve semiconductor uye hunhu hwazvo:
Silicon (Si): upamhi hwebandgap hunosvika 1.12 eV, cutoff wavelength inosvika 1107 nm. Yakakodzera kuona wavelength pfupi senge 850 nm, inowanzoshandiswa pakubatanidza fiber optic yemhando yepfupi (yakadai senzvimbo dzedata).
Gallium arsenide (GaAs): upamhi hwebandgap hwe1.42 eV, cutoff wavelength inosvika 873 nm. Yakakodzera 850 nm wavelength band, inogona kubatanidzwa neVCSEL light sources yezvinhu zvakafanana pa chip imwe chete.
Indium gallium arsenide (InGaAs): Upamhi hwebandgap hunogona kugadziriswa pakati pe0.36~1.42 eV, uye cutoff wavelength inofukidza 873~3542 nm. Ndiyo chinhu chikuru chinoongorora mahwindo ekutaurirana efiber e1310 nm ne1550 nm, asi inoda InP substrate uye yakaoma kubatanidzwa nemacircuits akavakirwa pasilicon.
Germanium (Ge): ine upamhi hwebandgap hunosvika 0.66 eV uye cutoff wavelength inosvika 1879 nm. Inogona kufukidza 1550 nm kusvika 1625 nm (L-band) uye inoenderana nesilicon substrates, zvichiita kuti ive mhinduro inogoneka yekuwedzera mhinduro kumaband marefu.
Silicon germanium alloy (yakadai seSi0.5Ge0.5): upamhi hwebandgap hunosvika 0.96 eV, cutoff wavelength inosvika 1292 nm. Nekushandisa germanium musilicon, response wavelength inogona kuwedzerwa kusvika kumaband akareba pane silicon substrate.
3. Kubatanidzwa kwemamiriro ekushandiswa:
Bhendi re850 nm:Zvishandiso zvesilicon photodetectorkana kuti maGaAs photodetector anogona kushandiswa.
1310/1550 nm bhendi:Zvishandiso zveInGaAs zvekuongorora mifananidzondiwo anonyanya kushandiswa. Magadzirirwo emifananidzo e germanium kana silicon germanium alloy anogonawo kufukidza huwandu uhu uye ane zvakanakira mukubatanidzwa kwe silicon.

Kazhinji, kuburikidza nepfungwa huru dzedzidziso yebhendi uye cutoff wavelength, hunhu hwekushandisa uye huwandu hwewavelength hwezvinhu zvakasiyana-siyana zve semiconductor muma photodetectors zvakaongororwa zvakarongeka, uye hukama hwepedyo pakati pekusarudza zvinhu, fiber optic communication wavelength window, uye mutengo wekubatanidza maitiro wakatsanangurwa.