OFC2024 mifananidzo yekuongorora

Nhasi ngatitarisei OFC2024photodetectors, izvo zvinonyanya kusanganisira GeSi PD/APD, InP SOA-PD, uye UTC-PD.

1. UCDAVIS inoita kuti resonant ye1315.5nm isina kusimba uye isina kuenzana Fabry-Perotmudziyo wekuona fotoine capacitance diki kwazvo, inofungidzirwa kuva 0.08fF. Kana bias iri -1V (-2V), rima current i0.72 nA (3.40 nA), uye response rate i0.93a /W (0.96a /W). Simba re optical rakazara i2 mW (3 mW). Rinogona kutsigira 38 GHz high-speed data experiments.
Dhayagiramu inotevera inoratidza chimiro cheAFP PD, iyo ine waveguide yakabatana neGe-on-Kana photodetectorne SOI-Ge waveguide yepamberi inoita kuti pave ne >90% mode matching coupling ine reflectivity ye <10%. Kumashure kune distributed Bragg reflector (DBR) ine reflectivity ye >95%. Kuburikidza ne optimized cavity design (round-trip phase matching condition), reflection uye transmission ye AFP resonator inogona kubviswa, zvichiita kuti Ge detector ipinde kusvika pa100%. Pamusoro pe 20nm bandwidth yese ye central wavelength, R+T <2% (-17 dB). Ge width i 0.6µm uye capacitance inofungidzirwa kuva 0.08fF.

2, Huazhong University of Science and Technology yakagadzira silicon germaniumphotodiode yeavalanche, bandwidth >67 GHz, kuwedzera >6.6. SACMChinoongorora mufananidzo cheAPDMaumbirwo e transverse pipin junction akagadzirwa papuratifomu yesilicon optical. Intrinsic germanium (i-Ge) uye intrinsic silicon (i-Si) zvinoshanda se light absorbing layer uye electron doubling layer, zvichiteerana. Dunhu re i-Ge rine hurefu hwe 14µm rinovimbisa kupinza chiedza kwakakwana pa 1550nm. Dunhu diki re i-Ge ne i-Si rinobatsira kuwedzera photocurrent density uye kuwedzera bandwidth pasi pe high bias voltage. APD eye map yakayerwa pa -10.6 V. Ne input optical power ye -14 dBm, eye map ye 50 Gb/s uye 64 Gb/s OOK signals inoratidzwa pazasi, uye SNR yakayerwa i 17.8 ne 13.2 dB, zvichiteerana.

3. Zvivako zveIHP 8-inch BiCMOS pilot line zvinoratidza germaniumChinoongorora mufananidzo chePDine upamhi hwemafin hunosvika 100 nm, izvo zvinogona kugadzira simba remagetsi rakakwirira uye nguva pfupi yekutora mifananidzo. Ge PD ine bandwidth yeOE ye265 GHz@2V@ 1.0mA DC photocurrent. Kufamba kwemaitiro kunoratidzwa pazasi. Chinhu chikuru ndechekuti kuisirwa kwemaion kwakasanganiswa kweSI kwakasiyiwa, uye chirongwa chekukura chinotorwa kudzivirira kukanganiswa kwekuisa maion pagermanium. Dark current i100nA,R = 0.45A /W.
4, HHI inoratidza InP SOA-PD, ine SSC, MQW-SOA uye photodetector inomhanyisa kumhanya. Kune O-band. PD ine A responsiveness ye0.57 A/W ine pasi pe1 dB PDL, nepo SOA-PD ine responsiveness ye24 A/W ine pasi pe1 dB PDL. Bandwidth yezviviri izvi i ~60GHz, uye musiyano we1 GHz unogona kuverengerwa nekuda kweresonance frequency yeSOA. Hapana pattern effect yakaonekwa mumufananidzo chaiwo weziso. SOA-PD inoderedza simba re optical rinodiwa neinenge 13 dB pa56 GBaud.

5. ETH inoshandisa Type II GaInAsSb/InP UTC-PD yakagadziridzwa, ine bandwidth ye60GHz@zero bias uye simba guru rekuburitsa re -11 DBM pa100GHz. Kuenderera mberi kwemhedzisiro yapfuura, uchishandisa kugona kwaGaInAsSb kwekufambisa maerekitironi kwakawedzerwa. Mupepa rino, ma layers ekuwedzera anosanganisira GaInAsSb ine doped yakawanda ye100 nm uye GaInAsSb isina kuvhurwa ye20 nm. NID layer inobatsira kuvandudza reactionness yese uye inobatsirawo kuderedza capacitance yese yemudziyo uye kuvandudza bandwidth. 64µm2 UTC-PD ine zero-bias bandwidth ye60 GHz, simba rekuburitsa re -11 dBm pa100 GHz, uye saturation current ye5.5 mA. Pa reverse bias ye3 V, bandwidth inowedzera kusvika 110 GHz.

6. Innolight yakagadzira modhi yemhinduro ye germanium silicon photodetector zvichibva pakufunga zvizere nezvekushandisa doping, kugoverwa kwemagetsi uye nguva yekufambisa carrier yakagadzirwa nemifananidzo. Nekuda kwekudiwa kwesimba guru rekupinda uye bandwidth yakakwira mumashandisirwo mazhinji, simba guru rekupinda richakonzera kudzikira kwebandwidth, tsika yakanakisa ndeyekuderedza huwandu hwecarrier mugermanium nekugadzira chimiro.

7, Tsinghua University yakagadzira mhando nhatu dzeUTC-PD, (1) 100GHz bandwidth double drift layer (DDL) structure ine high saturation power UTC-PD, (2) 100GHz bandwidth double drift layer (DCL) structure ine high response UTC-PD, (3) 230 GHZ bandwidth MUTC-PD ine high saturation power, Kune akasiyana mashandisirwo, high saturation power, high bandwidth uye high response ability zvinogona kubatsira mune ramangwana kana wapinda 200G era.