Tekinoroji itsva ye thin silicon photodetector

Tekinoroji itsva yesilicon photodetector yakatetepa
Zvivako zvekubata photon zvinoshandiswa kuwedzera kupinza kwechiedza muzvitetemichina yekuona mafoto yesilicon
Masisitimu ePhotonic ari kukurumidza kubatwa mumabasa mazhinji ari kubuda, anosanganisira kutaurirana kwemaziso, kunzwa kweliDAR, uye kurapa. Zvisinei, kushandiswa kwakapararira kwephotonics mumhinduro dzeinjiniya dzemangwana kunoenderana nemutengo wekugadzira.photodetectors, izvo zvinoenderana zvakanyanya nerudzi rwe semiconductor inoshandiswa pachinangwa ichocho.
Kare, silicon (Si) ndiyo yagara iri semiconductor inonyanya kuwanikwa muindasitiri yezvemagetsi, zvekuti maindasitiri mazhinji akakura achitenderedza chinhu ichi. Zvinosuwisa kuti Si ine mwero wekusapinza chiedza mu near infrared (NIR) spectrum zvichienzaniswa nedzimwe semiconductor dzakadai segallium arsenide (GaAs). Nekuda kweizvi, maGaAs nemamwe ma alloys akafanana ari kubudirira mukushandiswa kwe photonic asi haaenderane nemaitiro echinyakare e complementary metal-oxide semiconductor (CMOS) anoshandiswa mukugadzira akawanda ezvemagetsi. Izvi zvakaita kuti mitengo yekugadzira ikwire zvakanyanya.
Vaongorori vakagadzira nzira yekuwedzera zvakanyanya kunyudzwa kwesilicon near-infrared, izvo zvinogona kukonzera kudzikiswa kwemitengo mumidziyo ye photonic inoshanda zvakanyanya, uye timu yekutsvagisa yeUC Davis iri kutanga nzira itsva yekuvandudza zvikuru kunyudzwa kwechiedza mumafirimu matete esilicon. Mupepa ravo razvino paAdvanced Photonics Nexus, vanoratidza kekutanga kuratidzwa kwekuyedza kwe silicon-based photodetector ine zvivakwa zve micro-capturing light - uye nano-surface, vachiwana kuvandudzwa kwekushanda kusati kwamboitika kwakafanana neGaAs nedzimwe semiconductors dzeboka reIII-V. Photodetector ine plate ye silicon ine thick-thick micron yakaiswa pa substrate inodziisa, ine "minwe" yesimbi inotambanuka nenzira yefinger-fork kubva pasimbi inobatana iri pamusoro peplate. Chinokosha ndechekuti, silicon ine mapundu yakazadzwa nemaburi akatenderera akarongwa mu periodic pattern inoshanda senzvimbo dzekutora photon. Maumbirwo ese emudziyo anoita kuti chiedza chinowanzo itika chikotame neanenge 90° painorova pamusoro, zvichibvumira kuti chipararire padivi peSi plane. Nzira idzi dzekuparadzira chiedza padivi dzinowedzera nguva yekufamba kwechiedza uye dzinoita kuti chiedza chisanyanya kufamba, zvichiita kuti chiedza chishande pamwe chete uye zvichiwedzera kupinza chiedza.
Vaongorori vakaitisawo masimulation e optical uye ongororo dzedzidziso kuti vanzwisise zviri nani mhedzisiro yemagadzirirwo e photon capture, uye vakaita kuyedza kwakawanda vachienzanisa ma photodetector ane uye asina iwo. Vakaona kuti photon capture yakatungamira mukuvandudzwa kukuru mukushanda kwe broadband absorption muNIR spectrum, ichiramba iri pamusoro pe68% ne peak ye86%. Zvakakosha kucherechedza kuti mu near infrared band, absorption coefficient ye photon capture photodetector yakakwira kakawanda kupfuura ye silicon yakajairika, ichipfuura gallium arsenide. Pamusoro pezvo, kunyangwe dhizaini yakarongwa iri yema silicon plates ane 1μm gobvu, ma simulations e 30 nm uye 100 nm silicon films anoenderana neCMOS electronics anoratidza kushanda kwakafanana kwakawedzerwa.
Zvose zvabuda muchidzidzo ichi zvinoratidza nzira yakanaka yekuvandudza mashandiro ema photodetectors akavakirwa pa silicon mukushandiswa kuri kubuda kwema photonics. Kunyudzwa kwakanyanya kunogona kuwanikwa kunyangwe muma silicon layers akatetepa, uye simba reparasitic redunhu rinogona kuchengetwa rakaderera, izvo zvakakosha mumasystem anomhanyisa. Pamusoro pezvo, nzira iri kukurudzirwa inoenderana nemaitiro emazuva ano ekugadzira maCMOS uye nekudaro ine mukana wekuchinja nzira iyo ma optoelectronics anobatanidzwa muma circuits echinyakare. Izvi, zvinogonawo kugadzira nzira yekuwedzera kukuru muma network emakombiyuta anokurumidza uye tekinoroji yemifananidzo.