Tekinoroji nyowani yeyakaonda silicon photodetector

Tekinoroji nyowani yeyakaonda nesilicon photodetector
Photon capture zvimiro zvinoshandiswa kuwedzera kunyura kwemwenje mutetesilicon photodetectors
Photonic masisitimu ari kukurumidza kuwana traction mune akawanda ari kubuda maapplication, anosanganisira optical kutaurirana, liDAR sensing, uye yekurapa imaging. Nekudaro, kutorwa kwakapararira kwemafotonics mune ramangwana engineering mhinduro zvinoenderana nemutengo wekugadziraphotodetectors, izvo zvinoenderana zvakanyanya nerudzi rwe semiconductor inoshandiswa kune icho chinangwa.
Sechinyakare, silicon (Si) yanga iri iyo inonyanya kuwanikwa semiconductor muindasitiri yemagetsi, zvekuti maindasitiri mazhinji akakura akatenderedza chinhu ichi. Nehurombo, Si ine isina kusimba mwenje yekunyudza coefficient mune iri pedyo infrared (NIR) spectrum zvichienzaniswa nemamwe semiconductors akadai gallium arsenide (GaAs). Nekuda kweizvi, maGaA nemamwe maalloys ane hukama ari kubudirira mukushandisa mafotoni asi haaenderane neyechinyakare complementary metal-oxide semiconductor (CMOS) maitiro anoshandiswa mukugadzira akawanda emagetsi. Izvi zvakakonzera kuwedzera kwakanyanya mumitengo yavo yekugadzira.
Vatsvakurudzi vakagadzira nzira yekusimudzira zvakanyanya pedyo-infrared absorption musilicon, izvo zvinogona kukonzera kuderedzwa kwemari mu-high-performance photonic devices, uye UC Davis tsvakurudzo timu iri kupayona nzira itsva yekuvandudza zvikuru kunyura kwechiedza musilicon matete mafirimu. Mune bepa ravo rekupedzisira paAdvanced Photonics Nexus, vanoratidza kekutanga kuyedza ratidziro yesilicon-based photodetector ine light-capturing micro - uye nano-surface zvimiro, kuwana kusati kwamboitika kuvandudzwa kwekuita kunofananidzwa neGaAs uye mamwe III-V boka semiconductors. . Iyo photodetector ine micron-gobvu cylindrical silicon ndiro yakaiswa pane insulating substrate, ine simbi "minwe" inotambanukira mune yemunwe-forogo fashoni kubva pasimbi yekubata kumusoro kwendiro. Zvakakosha, iyo lumpy silicon yakazadzwa nemakomba akatenderera akarongwa mune periodic pateni inoita senge photon yekutora nzvimbo. Mamiriro ese echishandiso anoita kuti chiedza chinowanzo itika chikotame neinenge 90 ° painorova pamusoro, ichibvumira kuti iparadzire nechemberi pamwe neSi ndege. Aya lateral propagation modes anowedzera kureba kwekufamba kwechiedza uye zvinonyatso kunonoka, zvichiita kuti pave nekudyidzana kwakawanda kwechiedza uye nekudaro kunowedzera kunyura.
Vatsvakurudzi vakaitawo kuenzanisa kwemaziso uye ongororo yezvinyorwa kuti vanzwisise zviri nani migumisiro ye photon capture zvimiro, uye vakaita zviedzo zvakati wandei vachienzanisa mafotodetectors ane uye asina iwo. Vakaona kuti kutorwa kwephoton kwakakonzera kuvandudzwa kwakakosha mubroadband absorption kunyatsoita muNIR spectrum, kugara pamusoro pe68% nepamusoro pe86%. Zvakakosha kucherechedza kuti mune iri pedyo nebhendi re infrared, iyo yekunyudza coefficient ye photon capture photodetector yakapetwa kakawanda kupfuura iyo yesilicon yakajairwa, inodarika gallium arsenide. Pamusoro pezvo, kunyangwe dhizaini yakarongwa ndeye 1μm gobvu silicon mahwendefa, simulations e30 nm uye 100 nm silicon mafirimu anoenderana neCMOS zvemagetsi anoratidza yakafanana yakakwidziridzwa kuita.
Pakazere, mhedzisiro yechidzidzo ichi inoratidza zano rinovimbisa rekuvandudza mashandiro esilicon-based photodetectors mune ari kubuda mafotonic application. Kunyura kwepamusoro kunogona kuwanikwa kunyange mu-ultra-thin silicon layers, uye dunhu reparasitic capacitance inogona kuchengetwa yakaderera, iyo yakakosha mumasisitimu ekumhanya. Pamusoro pezvo, nzira yakarongwa inofambirana nemaitiro emazuva ano ekugadzira CMOS uye nekudaro ine mukana wekushandura nzira iyo optoelectronics inosanganiswa mumaseketi echinyakare. Izvi, zvakare, zvinogona kuvhura nzira yekusvetuka kwakakura mumakomputa anodhura ekupedzisira uye tekinoroji yekufungidzira.