Tsvagiridzo itsva pamusoro peganda rakatetepa zvakanyanyaInGaAs photodetector
Kufambira mberi kwetekinoroji yemifananidzo ye infrared ye "short-wave infrared" (SWIR) kwabatsira zvikuru mukuona husiku, kuongorora maindasitiri, kutsvagisa kwesainzi, nekuchengetedza kuchengetedzwa nedzimwe nzvimbo. Nekuwedzera kwekuda kwekuona kupfuura chiedza chinooneka, kuvandudzwa kwemasensa emifananidzo ye infrared ye "short-wave" kuri kuramba kuchiwedzera. Zvisinei, kuwana resolution yepamusoro uye ruzha rwakaderera.chinoona mapikicha chakafaraichiri kutarisana nematambudziko akawanda ehunyanzvi. Kunyangwe hazvo InGaAs short-wave infrared photodetector yechinyakare ichigona kuratidza kugona kwakanaka kwekushandura photoelectric uye kufamba kwecarrier, pane kusawirirana kukuru pakati pezviratidziro zvavo zvakakosha zvekushanda uye chimiro chemudziyo. Kuti uwane kushanda kwepamusoro kwequantum (QE), magadzirirwo akajairwa anoda layer yekunyudzwa (AL) ye3 micrometers kana kupfuura, uye dhizaini iyi yechimiro inotungamira kumatambudziko akasiyana-siyana.
Kuti kuderedze ukobvu hweabsorption layer (TAL) muInGaAs short-wave infraredmudziyo wekuona foto, kuripa kuderedzwa kwekunyudzwa kwemvura panguva refu kwakakosha, kunyanya kana ukobvu hwechikamu chidiki chekunyudzwa kwemvura huchikonzera kusakwana kwekunyudzwa kwemvura munzvimbo refu. Mufananidzo 1a unoratidza nzira yekuripa ukobvu hwechikamu chidiki chekunyudzwa kwemvura nekuwedzera nzira yekunyudzwa kwechiedza. Chidzidzo ichi chinosimudzira kushanda kwequantum (QE) mubhandi reinfrared remafungu mapfupi nekuisa chimiro cheTiOx/Au-based guided mode resonance (GMR) kumashure kwechishandiso.
Zvichienzaniswa nemaitiro ekare e planar metal reflection, chimiro che guided mode resonance chinogona kugadzira mhedzisiro yakawanda ye resonance absorption, zvichiwedzera zvakanyanya kushanda kwechiedza che long-wavelength. Vaongorori vakagadzirisa dhizaini ye key parameter ye guided mode resonance structure, kusanganisira nguva, kuumbwa kwezvinhu, uye filling factor, kuburikidza nenzira yakakomba ye coupled-wave analysis (RCWA). Nekuda kweizvozvo, chishandiso ichi chichiri kuchengetedza kunyudzwa kwakanaka mu short-wave infrared band. Nekushandisa mabhenefiti eInGaAs materials, vaongorori vakaongororawo spectral response zvichienderana ne substrate structure. Kuderera kweukobvu hwe absorption layer kunofanirwa kuperekedzwa nekudzikira kweEQE.
Mukupedzisa, tsvakiridzo iyi yakabudirira kugadzira chinoona nezveInGaAs chine ukobvu hwema micrometer 0.98 chete, icho chakatetepa kanopfuura kaviri nehafu pane chimiro chekare. Panguva imwe chete, chinochengetedza kushanda kwequantum kweanopfuura 70% muhukuru hwe400-1700 nm. Kubudirira kweInGaAs photodetector kunopa nzira itsva yehunyanzvi yekuvandudza masensa emifananidzo ane resolution yepamusoro, ane ruzha rwakaderera. Nguva yekufambisa nekukurumidza inounzwa nekugadzirwa kwechimiro chakatetepa zvakanyanya inotarisirwa kuderedza zvakanyanya crosstalk yemagetsi uye kuvandudza hunhu hwemhinduro yemudziyo. Panguva imwe chete, chimiro chemudziyo chakaderedzwa chakanakira tekinoroji yekubatanidza single-chip three-dimensional (M3D), zvichiisa hwaro hwekuwana high-density pixel arrays.
Nguva yekutumira: Kukadzi-24-2026