Ma photodetector anomhanya zvakanyanya anotanga kushandiswa neInGaAs photodetectors

Ma photodetector anomhanya zvikuru anoshandiswa neZvishandiso zveInGaAs zvekuongorora mifananidzo

Zvishandiso zvinokurumidza kuona mifananidzoMuchikamu chekutaurirana kwemaziso, mafoto detector eIII-V InGaAs anosanganisira uye IV full Si neGe/.Kana ma photodetectors. Yekutanga iyi inyanzvi yekuongorora near infrared, yagara ichishandiswa kwenguva yakareba, nepo yekupedzisira ichivimba ne silicon optical technology kuti ive nyeredzi iri kukwira, uye inzvimbo inonyanya kufarirwa muongororo yepasi rose ye optoelectronics mumakore achangopfuura. Pamusoro pezvo, michina mitsva yakavakirwa pa perovskite, organic uye two-dimensional materials iri kukura nekukurumidza nekuda kwezvakanaka zvekugadzirisa zviri nyore, kuchinjika kwakanaka uye hunhu hunogadziriswa. Pane misiyano yakakura pakati pemidziyo mitsva iyi nemidziyo yekuongorora inorganic inorganic muhunhu hwezvinhu uye maitiro ekugadzira. Michina yekuongorora perovskite ine hunhu hwakanaka hwekupinza chiedza uye kugona kushaja kwakanaka, michina yekuongorora organic materials inoshandiswa zvakanyanya nekuda kwemaerekitironi ayo asingadhuri uye anochinjika, uye michina yekuongorora mativi maviri yakakwezva kutariswa kukuru nekuda kwehunhu hwayo hwakasiyana hwepanyama uye kufamba kwakanyanya kwekutakura. Zvisinei, kana tichienzanisa neInGaAs neSi/Ge detectors, michina mitsva ichiri kuda kuvandudzwa maererano nekugadzikana kwenguva refu, kukura kwekugadzira uye kubatanidzwa.

InGaAs ndeimwe yezvinhu zvakanakisisa zvekushandisa ma photodetectors ekumhanya kwepamusoro uye ane mhinduro yepamusoro. Chekutanga, InGaAs imhando ye bandgap semiconductor yakananga, uye upamhi hwayo hwe bandgap hunogona kudzorwa nechiyero chiri pakati peIn neGa kuti zviwanikwe zviratidzo zve optical zvema wavelength akasiyana. Pakati pazvo, In0.53Ga0.47As inonyatsoenderana ne substrate lattice yeInP, uye ine light absorption coefficient yakakura mu optical communication band, iyo inonyanya kushandiswa mukugadzirira kwephotodetectors, uye simba rerima uye mashandiro emhinduro ndizvo zvakanakisawo. Chechipiri, zvinhu zveInGaAs neInP zvese zvine kumhanya kwakanyanya kwemaerekitironi, uye kumhanya kwazvo kwemaerekitironi kwakazara kunenge 1×107 cm/s. Panguva imwe chete, zvinhu zveInGaAs neInP zvine simba rekuwedzera kumhanya kwemaerekitironi pasi pesimba remagetsi rakati. Kumhanya kwakanyanya kunogona kukamurwa kuita 4×107cm/s uye 6×107cm/s, izvo zvinobatsira pakugadzira bandwidth yakakura yenguva yakatarwa. Parizvino, InGaAs photodetector ndiyo inonyanya kushandisa photodetector yekutaurirana kwemaziso, uye nzira yekubatanidza pamusoro pezviitiko inonyanya kushandiswa mumusika, uye zvigadzirwa zve25 Gbaud/s ne56 Gbaud/s surface incidence detector zvakawanikwa. Zvigadzirwa zvidiki, back incidence uye large bandwidth surface incidence detectors zvakagadzirwawo, izvo zvinonyanya kukodzera maapplication ekumhanya kwakanyanya uye high saturation. Zvisinei, surface incidence probe inogumira nekuda kwe coupling mode yayo uye yakaoma kubatanidzwa nezvimwe zvishandiso zve optoelectronic. Saka, nekuvandudzwa kwezvinodiwa zvekubatanidza optoelectronic, ma "waveguide" akabatana neInGaAs photodetectors ane mashandiro akanaka uye akakodzera kubatanidzwa ave chinhu chinonyanya kutsvagurudzwa, pakati pawo ma "commercial 70 GHz" ne110 GHz InGaAs photoprobe modules anenge ese achishandisa ma "waveguide coupled structures". Zvichienderana nezvinhu zvakasiyana zve substrate, "waveguide coupling InGaAs photoelectric probe" inogona kukamurwa muzvikamu zviviri: InP neSi. "Epitaxial" iri paInP substrate ine mhando yepamusoro uye yakakodzera kugadzirira michina inoshanda zvakanyanya. Zvisinei, kusawirirana kwakasiyana pakati pezvinhu zveIII-V, zvinhu zveInGaAs uye zvinhu zveSi zvakakurirwa kana kusungirirwa paSi substrates zvinoita kuti zvinhu kana interface zvive zvisina kunaka, uye mashandiro emudziyo achiri nenzvimbo yakakura yekuvandudza.