High speed photodetectors inounzwa neInGaAs photodetectors

High speed photodetectors inounzwa neInGaAs mafotodetectors

High-speed photodetectorsmundima yekukurukurirana kwemaziso kunyanya inosanganisira III-V InGaAs photodetectors uye IV yakazara Si uye Ge/Ndiwo mafotodetectors. Iyo yekutanga ndeyechinyakare padhuze infrared detector, iyo yanga ichitonga kwenguva yakareba, nepo yekupedzisira ichivimba nesilicon optical tekinoroji kuti ive nyeredzi iri kusimukira, uye inzvimbo inopisa mumunda wepasi rose optoelectronics tsvagiridzo mumakore achangopfuura. Uye zvakare, mitsva mitsva yakavakirwa perovskite, organic uye maviri-dimensional zvinhu zviri kukurumidza kukurumidza nekuda kwezvakanaka zvekugadzirisa zviri nyore, zvakanaka kuchinjika uye tunable zvinhu. Pane misiyano yakakura pakati peaya ma detectors matsva uye echinyakare inorganic photodetectors mune zvenyama zvivakwa uye maitiro ekugadzira. Perovskite ma detectors ane yakanakisa kunyudza mwenje hunhu uye inobudirira yekuchaja kutakura, organic zvinhu ma detectors anoshandiswa zvakanyanya kune yavo yakaderera mutengo uye inoshanduka maerekitironi, uye maviri-dimensional ekuona zvinhu akakwezva kutarisisa nekuda kweakasarudzika emuviri zvimiro uye yakakwirira inotakura kufamba. Zvisinei, kana zvichienzaniswa neInGaAs uye Si/Ge detectors, zvitsva zvitsva zvichiri kuda kuvandudzwa maererano nekugadzikana kwenguva refu, kukura kwekugadzira uye kubatanidzwa.

InGaAs ndechimwe chezvakanakira zvinhu zvekuona kumhanya kwakanyanya uye yakakwirira mhinduro mafotodetectors. Chekutanga pane zvese, InGaAs ndeye yakananga bandgap semiconductor zvinhu, uye upamhi hwayo hwebhendi hunogona kudzorwa nereshiyo pakati peIn neGa kuti iwane kuwanikwa kwezviratidzo zvemaziso zveavelengths akasiyana. Pakati pazvo, In0.53Ga0.47As inofananidzwa zvakakwana ne substrate lattice yeInP, uye ine chiedza chakakura chekutora coefficient mu optical communication band, iyo inonyanya kushandiswa mukugadzirira.photodetectors, uye iyo yakasviba ikozvino uye yekupindura kuita ndiyo yakanyanya kunaka. Kechipiri, InGaAs uye InP zvinhu zvese zvine yakakwira erekitironi drift velocity, uye iwo akazara erekitironi drift velocity inenge 1 × 107 cm/s. Panguva imwecheteyo, InGaAs uye InP zvinhu zvine electron velocity overshoot effect pasi pesimba remagetsi. Iyo overshoot velocity inogona kukamurwa kuita 4 × 107cm/s uye 6 × 107cm/s, izvo zvinobatsira pakuziva yakakura inotakura nguva-inogumira bandwidth. Parizvino, InGaAs photodetector ndiyo inonyanya kukosha yekuona mapikicha ekukurukurirana kwemaziso, uye nzira yekubatanidza chiitiko chepamusoro inonyanya kushandiswa pamusika, uye 25 Gbaud/s uye 56 Gbaud/s pamusoro pezviitiko zvekuona zvigadzirwa zvakaonekwa. Kukura kudiki, chiitiko chekumashure uye hombe bandwidth surface incidence detectors zvakare yakagadziridzwa, iyo inonyanya kukodzera kumhanyisa uye yakakwirira saturation application. Nekudaro, iyo yepamusoro chiitiko probe inogumira neiyo coupling mode uye yakaoma kubatanidza nemamwe maoptoelectronic zvishandiso. Naizvozvo, nekuvandudzwa kwezvinodiwa zvekubatanidza optoelectronic, waveguide yakasanganiswa InGaAs mafotodetectors ane mashandiro akanaka uye akakodzera kubatanidza zvishoma nezvishoma ave akatarisana nekutsvagisa, pakati peiyo yekutengesa 70 GHz uye 110 GHz InGaAs photoprobe modules anenge ese ari kushandisa waveguide akabatanidza zvimiro. Zvinoenderana neakasiyana substrate zvinhu, iyo waveguide yekubatanidza InGaAs photoelectric probe inogona kukamurwa kuita mapoka maviri: InP uye Si. Iyo epitaxial zvinhu paInP substrate ine mhando yepamusoro uye inonyanya kukodzera kugadzirira kwepamusoro-inoshanda michina. Nekudaro, akasiyana siyana pakati peIII-V zvinhu, InGaAs zvinhu uye maSi substrates akakura kana kusungirirwa paSi substrates anotungamira kune yakashata zvinhu kana interface mhando, uye kuita kwechishandiso kuchine kamuri hombe yekuvandudza.