Chinoongorora mafoto che infrared chinozvishandira chega chine simba guru

Inozvishandira yega yepamusorochinoona mufananidzo che infrared

infraredmudziyo wekuona fotoine hunhu hwekugona kwakasimba kudzivirira kukanganiswa, kugona kwakasimba kuziva chinangwa, kushanda zvakanaka mumamiriro ese ekunze uye kuvanda zvakanaka. Iri kutamba basa rakakosha muminda yakaita semishonga, mauto, tekinoroji yemuchadenga uye mainjiniya ezvakatipoteredza. Pakati payo, inozvitungamira yogakuonekwa kwemagetsi emagetsiChip inogona kushanda yega isina simba rekuwedzera rekunze yakakwezva kutariswa kukuru mumunda wekuona machip e infrared nekuda kwekushanda kwayo kwakasiyana (sekuzvimiririra kwesimba, kunzwa kwakanyanya uye kugadzikana, nezvimwewo). Kusiyana neizvi, machip echinyakare ekuona ma photoelectric, akadai se silicon-based kana narrowbandgap semiconductor-based infrared chips, haangodi chete ma voltage ekuwedzera bias kuti afambise kupatsanurwa kwevatakuri ve photogenerated kuti vagadzire ma photocurrents, asiwo anoda mamwe ma cooling systems kuderedza ruzha rwekupisa uye kuvandudza response. Nokudaro, zvave zvakaoma kusangana nepfungwa itsva nezvinodiwa zvechizvarwa chinotevera chemachip ekuona ma infrared mune ramangwana, zvakaita sekushandiswa kwesimba shoma, saizi diki, mutengo wakaderera uye kushanda kwepamusoro.

Munguva pfupi yapfuura, mapoka ekutsvagisa kubva kuChina neSweden akakurudzira chip itsva yekuona ma "pin heterojunction" inotungamirwa ne "short-wave infrared (SWIR)" yakavakirwa pamafirimu e "graphene nanoribbon" (GNR)/alumina/single crystal silicon". Pasi pemhedzisiro yakabatana ye "optical gating effect" inokonzerwa ne "heterogeneous interface" uye "built-in electric field", chip yakaratidza mhinduro yepamusoro-soro uye mashandiro ekuona pa zero bia voltage. Chip yekuona ma "photoelectric" ine "A response rate" yakakwira se75.3 A/W mu "self-driven mode", chiyero chekuona che7.5 × 10¹⁴ Jones, uye kushanda kwe "external quantum efficiency" pedyo ne104%, zvichivandudza mashandiro ekuona emhando imwechete yema "silicon-based chips" nerekodhi ye7 orders of magnitude. Pamusoro pezvo, pasi pe "conventional drive mode", chiyero che "chip" chekupindura, chiyero chekuona, uye kushanda kwe "external quantum efficiency" zvese zvakakwirira se843 A/W, 10¹⁵ Jones, uye 105% zvichiteerana, zvese zviri zvibodzwa zvepamusoro zvakataurwa mukutsvagisa kwazvino. Zvichakadaro, tsvakiridzo iyi yakaratidzawo mashandisirwo chaiwo echip chekuona mafotoelectric muminda yekutaurirana kwemaziso uye kufungidzira kweinfrared, zvichiratidza kugona kwayo kukuru kwekushandisa.

Kuti vaongorore mashandiro e photoelectric e photodetector zvichibva pa graphene nanoribbons /Al₂O₃/ single crystal silicon, vaongorori vakaedza static (current-voltage curve) uye dynamic characteristic responses (current-time curve). Kuti vaongorore maitiro e optical response e graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector pasi pema voltages akasiyana-siyana e bias, vaongorori vakayera dynamic current response yemuchina pa 0 V, -1 V, -3 V uye -5 V biases, ine optical power density ye 8.15 μW/cm². Photocurrent inowedzera ne reverse bias uye inoratidza kukurumidza kupindura pa voltages dzese dze bias.

Pakupedzisira, vaongorori vakagadzira sisitimu yekutora mifananidzo uye vakabudirira kuwana mifananidzo ye infrared ye mafungu mapfupi. Sisitimu iyi inoshanda pasina kusarura uye haina simba rakawanda. Kugona kwekutora mifananidzo kwe photodetector kwakaongororwa uchishandisa mask nhema ine bhii rekuti "T" pattern (sezvinoratidzwa muMufananidzo 1).

Mukupedzisa, tsvakiridzo iyi yakabudirira kugadzira ma photodetector anozvishandisa ega akavakirwa pa graphene nanoribhoni uye akawana mukana wepamusoro wekupindura. Panguva iyi, vaongorori vakabudirira kuratidza kugona kwekutaurirana kwemaziso uye kufungidzira kweizvi.chishandiso chinoona mifananidzo chinopindura zvakanyanyaKubudirira uku kwekutsvaga hakungopi nzira inoshanda chete yekugadzira ma graphene nanoribhoni nemidziyo ye optoelectronic yakavakirwa pasilicon, asiwo kunoratidza kushanda kwavo kwakanaka sema short-wave infrared photodetectors anozvishandisa ega.