High-performance self-drivinginfrared photodetector
infraredphotodetectorine hunhu hwakasimba hwekurwisa-kupindira kugona, kugona kwakasimba kwekuziva chinangwa, kushanda kwese-mamiriro ekunze uye kuvanza kwakanaka. Iri kuita basa rinowedzera kukosha muminda yakadai semushonga, mauto, tekinoroji yemuchadenga uye engineering yezvakatipoteredza. Pakati pavo, vanozvifambisaphotoelectric kuonekwachip iyo inogona kushanda yakazvimiririra isina yekunze yekuwedzera magetsi yakakwezva kutarisisa kwakawanda mumunda wekuonekwa kwe infrared nekuda kwekuita kwayo kwakasiyana (senge simba rekuzvimirira, kunzwa kwakanyanya uye kugadzikana, nezvimwewo). Kusiyana neizvi, chinyakare mapikicha ekuona machipisi, akadai sesilicon-based kana narrowbandgap semiconductor-based infrared chips, haingodi mamwe mavhiriji ekudzinga kupatsanurwa kwemafotogenerated carriers kuti ibudise mafotocurrents, asi inodawo mamwe ekutonhodza masisitimu kudzikisa ruzha rwekupisa uye kunatsiridza kuterera. Nokudaro, zvave zvakaoma kuzadzisa pfungwa itsva uye zvinodiwa zvechizvarwa chinotevera chekutsvaga infrared machipi mune ramangwana, zvakadai sekushandiswa kwesimba shoma, hukuru hudiki, mutengo wakaderera uye kushanda kwepamusoro.
Munguva pfupi yadarika, zvikwata zvekutsvagisa kubva kuChina neSweden zvakakurudzira chinyorwa chepini heterojunction self-driven short-wave infrared (SWIR) photoelectric monitoring chip yakavakirwa pagraphene nanoribbon (GNR) mafirimu/alumina/single crystal silicon. Pasi pemusanganiswa weiyo optical gating effect inokonzereswa neiyo heterogeneous interface uye yakavakirwa-mukati munda wemagetsi, iyo chip yakaratidza yekupedzisira-yepamusoro mhinduro uye yekuona kuita pa zero bias voltage. Iyo photoelectric discovery chip ine A response rate yakakwira se75.3 A/W in self-driven mode, chiyero chekuona che 7.5 × 10¹⁴ Jones, uye yekunze quantum kunyatsoshanda pedyo ne104%, kuvandudza kushanda kwekuona kwemhando imwechete yesilicon-based chips nerekodhi 7 mirairo yehukuru. Pamusoro pezvo, pasi peyakajairwa dhiraivha modhi, chiyero chekupindura kweiyo chip, chiyero chekuona, uye ekunze quantum kunyatsoita zvese zvakakwirira se843 A/W, 10¹⁵ Jones, uye 105% zvakateerana, ese ari iwo emhando yepamusoro akataurwa mukutsvagisa kwazvino. Zvichakadaro, tsvakiridzo iyi yakaratidzawo mashandisirwo epasirese eiyo photoelectric yekuona chip muminda yekutaurirana kwemaziso uye infrared imaging, ichiratidza kugona kwayo kukuru kwekushandisa.
Kuti udzidze zvakarongeka mashandiro ephotoelectric yephotodetector yakavakirwa pagraphene nanoribhoni / Al₂O₃/ single crystal silicon, vaongorori vakaedza static yayo (ikozvino-voltage curve) uye ine simba hunhu mhinduro (ikozvino-nguva curve). Kuongorora zvine hungwaru maitiro emhinduro yegraphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector pasi pemavhiriji akasiyana siyana, vaongorori vakayera mapinduriro azvino emuchina pa 0 V, -1 V, -3 V uye -5 V biases, iine optical power density ye μ.15 ² W8cm. Iyo photocurrent inowedzera pamwe nereverse bias uye inoratidza kukurumidza kupindura kumhanya pane ese bias voltages.
Pakupedzisira, vatsvakurudzi vakagadzira hurongwa hwekufungidzira uye vakabudirira kubudirira pachako-powered imaging ye short-wave infrared. Iyo sisitimu inoshanda pasi pe zero bias uye haina simba rekushandisa zvachose. Iko kugona kwekufungidzira kweiyo photodetector kwakaongororwa uchishandisa mask dema ine tsamba "T" patani (sezvakaratidzwa mumufananidzo 1).
Mukupedzisa, tsvakiridzo iyi yakabudirira kugadzira ega-powered photodetectors zvichibva pagraphene nanoribhoni uye yakawana rekodhi-kutyora-yepamusoro yekupindura mwero. Zvichakadaro, vaongorori vakabudirira kuratidza kutaurirana kwemaziso uye kugona kwekufungidzira kweizviinopindura zvakanyanya photodetector. Iyi tsvakiridzo yebudiriro haingopi nzira inoshanda yekugadzira graphene nanoribhoni uye silicon-based optoelectronic zvishandiso, asi zvakare inoratidza kuita kwavo kwakanakisa seye-self-powered short-wave infrared photodetectors.
Nguva yekutumira: Kubvumbi-28-2025