Sarudzo Yenzvimbo Yakanaka yeLaser: Edge Emission Semiconductor Laser Chikamu Chechipiri

Sarudzo YezvakanakiraChitubu cheLaser: Kubuda kweEdgeLaser yeSemiconductorChikamu Chechipiri

4. Mamiriro ekushandiswa kwema lasers e edge-emission semiconductor
Nekuda kwehukuru hwayo hwakakura hwewavelength uye simba rayo rakakwirira, ma laser e semiconductor emupendero-emitting anoshandiswa zvinobudirira munzvimbo dzakawanda dzakadai semotokari, kutaurirana kwemaziso uyelaserkurapwa kwekurapa. Sekureva kweYole Developpement, iyo kambani inozivikanwa pasi rose yekutsvagisa musika, musika we edge-to-emit laser uchakura kusvika mabhiriyoni emadhora 7.4 muna 2027, nehuwandu hwekukura kwegore negore hwe13%. Kukura uku kucharamba kuchikonzerwa nekutaurirana kwe optical, senge optical modules, amplifiers, uye 3D sensing applications dzekutaurirana kwedata ne telecommunications. Kune zvinodiwa zvakasiyana zvekushandisa, zvirongwa zvakasiyana zvekugadzira chimiro cheEEL zvakagadzirwa muindasitiri, zvinosanganisira: Fabripero (FP) semiconductor lasers, Distributed Bragg Reflector (DBR) semiconductor lasers, external cavity laser semiconductor lasers, distributed feedback semiconductor lasers (Laser yeDFB), quantum cascade semiconductor lasers (QCL), uye wide area laser diodes (BALD).

Nekuwedzera kuri kuita kudiwa kwekutaurirana kwemaziso, maapplication e3D sensing nedzimwe nzvimbo, kudiwa kwemaseruminiyamu laser kuri kuwedzerawo. Pamusoro pezvo, maseruminiyamu lasers emupendero wekunze uye maseruminiyamu emupendero wepamusoro-soro anoitawo basa rekuzadza zvikanganiso zveumwe neumwe mumaapplication ari kubuda, akadai se:
(1) Munyaya yekutaurirana kwemaziso, 1550 nm InGaAsP/InP Distributed Feedback ((DFB laser) EEL uye 1300 nm InGaAsP/InGaP Fabry Pero EEL dzinowanzo shandiswa pamatanho ekutumirwa kwemagetsi ari pakati pe2 km ne40 km uye mwero wekutumirwa kwemagetsi unosvika 40 Gbps. Zvisinei, pamatanho ekutumirwa kwemagetsi ari pakati pe60 m ne300 m uye kumhanya kwekutumira kwakaderera, maVCsel akavakirwa pa850 nm InGaAs neAlGaAs ndiwo anonyanya kushandiswa.
(2) Malaser anoburitsa zvinhu pamusoro pevhu akamira zvakanaka ane mabhenefiti ehukuru hudiki uye hurefu hwakamanikana, saka ave achishandiswa zvakanyanya mumusika wemagetsi evatengi, uye mabhenefiti ekupenya nesimba emalaser e-semiconductor edge emitting anovhura nzira yekushandisa kure uye kugadzirisa simba rakawanda.
(3) Malaser ese ari maviri e edge-emitting semiconductor uye vertical cavity surface-emitting semiconductor lasers anogona kushandiswa kwenguva pfupi - uye yepakati-range liDAR kuti awane mashandisirwo chaiwo akadai sekuona nzvimbo isina chinhu uye kubva munzira.

5. Kubudirira mune ramangwana
Laser ye edge emit semiconductor ine zvakanakira zvekuvimbika kwakanyanya, miniaturization uye high luminous power density, uye ine mikana yakawanda yekushandisa mu optical communication, liDAR, medical nedzimwe nzvimbo. Zvisinei, kunyangwe maitiro ekugadzira e edge-emitting semiconductor lasers ave akakura, kuitira kusangana nekukura kwekuda kwemisika yemaindasitiri nevatengi ve edge-emitting semiconductor lasers, zvakakosha kugara uchigadzirisa tekinoroji, maitiro, mashandiro uye zvimwe zvikamu zve edge-emitting semiconductor lasers, zvinosanganisira: kuderedza defect density mukati me wafer; Deredza maitiro ekuita; Gadzira matekinoroji matsva ekutsiva maitiro echinyakare ekukuya uye blade wafer cutting processes anowanzo kukonzera zvikanganiso; Gadzirisa chimiro che epitaxial kuti uvandudze kushanda kwe edge-emitting laser; Deredza mari yekugadzira, nezvimwewo. Pamusoro pezvo, nekuti chiedza chinobuda che edge-emitting laser chiri pamucheto we semiconductor laser chip, zvakaoma kuwana small-size chip packaging, saka maitiro ekubatanidza anoenderana achiri kuda kufambiswa mberi.