Sarudzo yeIdeal Laser Source: Edge Emission Semiconductor Laser Chikamu Chechipiri

Sarudzo YezvakanakaLaser Source: Edge EmissionSemiconductor LaserChikamu Chechipiri

4. Mamiriro ekushandisa edge-emission semiconductor lasers
Nekuda kwehupamhi hwayo hwewavelength renji uye simba repamusoro, edge-emitting semiconductor lasers yakashandiswa zvinobudirira muminda yakawanda senge mota, optical kutaurirana uye.laserkurapwa. Sekureva kwaYole Developpement, kambani ine mukurumbira pasi rese yemusika wekutsvagisa, musika-ku-emit laser musika uchakura kusvika pamabhiriyoni manomwe nemazana mana emadhora muna 2027, uine huwandu hwekukura kwepagore hwe13%. Uku kukura kucharamba kuchifambiswa nekufambiswa kwekuonana kwemaziso, senge optical modules, amplifiers, uye 3D sensing application yekutaurirana nenhare. Kune akasiyana mashandisirwo ezvinodiwa, akasiyana EEL chimiro dhizaini zvirongwa zvakagadziridzwa muindasitiri, kusanganisira: Fabripero (FP) semiconductor lasers, Distributed Bragg Reflector (DBR) semiconductor lasers, ekunze cavity laser (ECL) semiconductor lasers, akagovera mhinduro semiconductor lasers (DFB laser), quantum cascade semiconductor lasers (QCL), uye yakafara nzvimbo laser diodes (BALD).

Nekuwedzera kuri kuda kwekutaurirana kwemaziso, 3D sensing application uye mamwe minda, kudiwa kwema semiconductor lasers kuri kuwedzerawo. Pamusoro pezvo, edge-emitting semiconductor lasers uye vertical-cavity surface-emitting semiconductor lasers vanoitawo basa mukuzadza zvikanganiso zvemumwe nemumwe mumashandisirwo ari kubuda, akadai se:
(1) Mundima ye optical communications, iyo 1550 nm InGaAsP/InP Distributed Feedback ( (DFB laser) EEL uye 1300 nm InGaAsP/InGaP Fabry Pero EEL inowanzoshandiswa pakufambisa madaro e2 km kusvika 40 km uye mitengo yekufambisa kusvika. 40 Gbps Zvisinei, pa 60 m kusvika 300 m ekufambisa madaro uye yakaderera transmission speeds, VCsels inobva pa850 nm InGaAs uye AlGaAs inotonga.
(2) Vertical cavity surface-emitting lasers ine mabhenefiti ehukuru hudiki uye nhete yavelength, saka yakashandiswa zvakanyanya mumusika wemagetsi evatengi, uye kupenya uye simba rakanakira edge emitting semiconductor lasers inovhura nzira yekunzwa kure kure. high-power processing.
(3) Ese ari maviri eed-emitting semiconductor lasers uye vertical cavity surface-emitting semiconductor lasers anogona kushandiswa kwenguva pfupi - uye yepakati-renji liDAR kuita chaiwo maapplication akadai sekuona mapofu uye kusimuka kwenzira.

5. Kubudirira kweramangwana
Iyo yekumucheto emitting semiconductor laser ine zvakanakira kuvimbika kwepamusoro, miniaturization uye yakakwira inopenya simba density, uye ine yakafara tarisiro yekushandisa mu optical kutaurirana, liDAR, zvekurapa nezvimwe minda. Nekudaro, kunyangwe iyo nzira yekugadzira yeedge-emitting semiconductor lasers yave yakakura, kuitira kuti isangane nekukura kuri kuda kwemaindasitiri nevatengi misika yeedge-emitting semiconductor lasers, zvinodikanwa kuenderera mberi nekugadzirisa tekinoroji, maitiro, kuita uye zvimwe. zvikamu zve edge-emitting semiconductor lasers, kusanganisira: kuderedza defect density mukati mewafe; Kuderedza maitiro ekugadzirisa; Gadzira matekinoroji matsva ekutsiva echinyakare vhiri uye blade wafer yekucheka maitiro ayo anowanzo kuunza hurema; Gadzirisa iyo epitaxial chimiro kuti uvandudze kugona kwe edge-emitting laser; Deredza mari yekugadzira, nezvimwe. Pamusoro pezvo, nekuti mwenje unobuda weiyo edge-emitting laser iri padivi kumucheto we semiconductor laser chip, zvakaoma kuwana diki-saizi chip packaging, saka iyo inoenderana yekurongedza nzira ichiri kufanira kuve. kuwedzera kupaza.