Sarudzo yekwakabva laser yakakodzera: edge emission semiconductor laser Chikamu Chekutanga

Sarudzo yezvakanakisasosi yelaser: edge emission semiconductor laser
1. Nhanganyaya
Laser ye semiconductorMachipisi akakamurwa kuita machipisi e-edge emitting laser (EEL) uye machipisi e-vertical cavity surface emitting laser (VCSEL) zvichienderana nemaitiro akasiyana ekugadzira ma resonators, uye musiyano wavo chaiwo wechimiro unoratidzwa muMufananidzo 1. Kana tichienzanisa ne-vertical cavity surface emitting laser, kuvandudzwa kwetekinoroji yelaser ye-edge emitting semiconductor kwakakura, kune huwandu hwakakura hwewavelength, yakakwirira.yemagetsi-yemazisokushanda zvakanaka kwekushandura, simba guru nezvimwe zvakanakira, zvakakodzera zvikuru pakugadzirisa laser, kutaurirana kwemaziso nedzimwe nzvimbo. Parizvino, ma laser e semiconductor anoburitsa edge-emitting chikamu chakakosha cheindasitiri ye optoelectronics, uye mashandisirwo awo anosanganisira indasitiri, kutaurirana nefoni, sainzi, vatengi, mauto uye ndege. Nekuvandudzwa nekufambira mberi kwetekinoroji, simba, kuvimbika uye kushanda zvakanaka kwekushandura simba kwema laser e semiconductor anoburitsa edge-emitting zvakavandudzwa zvikuru, uye mikana yavo yekushandisa yakakura zvikuru.
Tevere, ndichakutungamira kuti unyatso koshesa runako rwakasiyana rwekuburitsa zvinhu parutivilaser dze semiconductor.

Mufananidzo 1 (kuruboshwe) welaser yesemiconductor iri kudivi uye (kurudyi) dhayagiramu yechimiro chelaser iri kutenderera pamusoro pegomba rakamira

2. Nheyo yekushanda kwe edge emission semiconductorlaser
Maumbirwo elaser ye semiconductor inoburitsa maedge-emitting anogona kukamurwa kuita zvikamu zvitatu zvinotevera: semiconductor active region, pombi source uye optical resonator. Kusiyana nema resonators ema vertical cavity surface-emitting lasers (ayo anoumbwa nemagirazi eBragg epamusoro nepasi), ma resonators ari mu edge-emitting semiconductor laser devices anonyanya kugadzirwa nema optical films kumativi ese. Maumbirwo echishandiso cheEEL uye chimiro che resonator zvinoratidzwa muMufananidzo 2. Photon iri mu edge-emission semiconductor laser device inowedzerwa nekusarudza mode mu resonator, uye laser inoumbwa munzira yakatarisana ne substrate surface. Ma edge-emitting semiconductor laser devices ane ma wavelengths akasiyana-siyana uye akakodzera mashandisirwo akawanda anoshanda, saka anova imwe yema sosi elaser akakodzera.

Ma indexes ekuongorora mashandiro ema edge-emitting semiconductor lasers anoenderanawo nemamwe ma semiconductor lasers, anosanganisira: (1) laser lasing wavelength; (2) Threshold current Ith, kureva kuti, current apo laser diode inotanga kugadzira laser oscillation; (3) Iop inoshanda, kureva kuti, driving current kana laser diode yasvika pa rated output power, iyi parameter inoshandiswa pakugadzira uye modulation ye laser drive circuit; (4) Slope efficiency; (5) Vertical divergence Angle θ⊥; (6) Horizontal divergence Angle θ∥; (7) Tarisa current Im, kureva kuti, current Im ye semiconductor laser chip pa rated output power.

3. Kufambira mberi kwekutsvaga kweGaAs neGaN based edge emitting semiconductor lasers
Iyo semiconductor laser yakavakirwa paGaAs semiconductor material ndeimwe yematekinoroji e semiconductor laser akura zvikuru. Parizvino, maGAAS-based near-infrared band (760-1060 nm) edge-emitting semiconductor lasers ave achishandiswa zvakanyanya mukutengeserana. Sechizvarwa chechitatu che semiconductor material mushure meSi neGaAs, GaN yave ichinyanya kufarira tsvakurudzo yesainzi uye indasitiri nekuda kwehunhu hwayo hwakanaka hwepanyama nemakemikari. Nekuvandudzwa kwemidziyo ye optoelectronic yakavakirwa paGAN uye kuedza kwevaongorori, maGAN-based light-emitting diodes uye edge-emitting lasers zvave maindasitiri.