Sarudzo yezvakanakalaser source: edge emission semiconductor laser
1. Nhanganyaya
Semiconductor lasermachipisi akakamurwa kuita edge emitting laser chips (EEL) uye vertical cavity surface emitting laser chips (VCSEL) maererano neyakasiyana siyana yekugadzira maitirwo emaresonators, uye iwo chaiwo misiyano yezvimiro inoratidzwa muMufananidzo 1. emitting semiconductor laser tekinoroji budiriro yakanyanya kukura, ine yakafara wavelength renji, yakakwiraelectro-opticalkutendeuka kunyatsoita, simba rakakura uye zvimwe zvakanakira, yakakodzera kwazvo laser processing, optical communication uye mamwe minda. Parizvino, edge-emitting semiconductor lasers chikamu chakakosha cheindasitiri yeoptoelectronics, uye mashandisiro awo akafukidza indasitiri, nharembozha, sainzi, vatengi, mauto uye aerospace. Nekuvandudzwa uye kufambira mberi kwetekinoroji, simba, kuvimbika uye kushandura simba kwe edge-emitting semiconductor lasers zvakavandudzwa zvakanyanya, uye tarisiro yavo yekushandisa inowedzera uye yakakura.
Tevere, ini ndinokutungamira kuti uwedzere kukoshesa yakasarudzika runako rwepadivi-emittingsemiconductor lasers.
Mufananidzo 1 (kuruboshwe) side emitting semiconductor laser uye (kurudyi) yakatwasuka mhango pamusoro emitting laser chimiro dhiyagiramu.
2. Kushanda musimboti weedge emission semiconductorlaser
Chimiro che edge-emitting semiconductor laser inogona kukamurwa kuita zvikamu zvitatu zvinotevera: semiconductor inoshanda dunhu, pombi sosi uye resonator yemaziso. Yakasiyana kubva kune resonator ye vertical cavity surface-emitting lasers (iyo inoumbwa nepamusoro uye pasi Bragg magirazi), resonators mune edge-emitting semiconductor laser zvishandiso zvinonyanya kuumbwa nemafirimu emeso pamativi ese. Iyo yakajairika EEL mudziyo chimiro uye resonator chimiro chinoratidzwa muMufananidzo 2. Iyo fotoni mumucheto-emission semiconductor laser mudziyo inokwidziridzwa nekusarudzwa kwemodhi mune resonator, uye iyo laser inoumbwa munzira yakatarisana neiyo substrate surface. Edge-emitting semiconductor laser zvishandiso zvine huwandu hwakasiyana hwekushanda wavelengths uye yakakodzera kune akawanda anoshanda maapplication, saka inove imwe yeakanakisa laser masosi.
Iko maitiro ekuongorora maitiro ekumucheto-emitting semiconductor lasers anowiriranawo nemamwe semiconductor lasers, kusanganisira: (1) laser lasing wavelength; (2) Threshold yazvino Ith, ndiko kuti, ikozvino iyo laser diode inotanga kugadzira laser oscillation; (3) Kushanda ikozvino Iop, ndiko kuti, yekutyaira ikozvino kana laser diode ichisvika kune yakayerwa kubuda simba, iyi parameter inoiswa kune dhizaini uye modulation ye laser drive circuit; (4) Slope kushanda zvakanaka; (5) Divergence yakatwasuka Engiro θ⊥; (6) Horizontal divergence Engle θ∥; (7) Tarisa iyo Im yazvino, ndiko kuti, saizi yazvino ye semiconductor laser chip pane yakayerwa kubuda simba.
3. Kufambira mberi kwekutsvakurudza kweGaAs neGaN based edge emitting semiconductor lasers
Iyo semiconductor laser yakavakirwa paGaAs semiconductor zvinhu ndeimwe yeakanyanya kukura semiconductor laser tekinoroji. Parizvino, GAAS-yakavakirwa pedyo-infrared bhendi (760-1060 nm) edge-emitting semiconductor lasers ave achishandiswa zvakanyanya mukutengesa. Sechizvarwa chechitatu semiconductor zvinhu mushure meSi neGaAs, GaN yanga ichinetseka zvakanyanya mukutsvagisa kwesainzi uye indasitiri nekuda kwehunhu hwayo hwemuviri nemakemikari. Nekuvandudzwa kweGAN-based optoelectronic zvishandiso uye kuedza kwevaongorori, GAN-based light-emitting diodes uye edge-emitting lasers ave maindasitiri.
Nguva yekutumira: Jan-16-2024