Pfupiso: Chimiro chikuru uye musimboti wekushanda kweavalanche photodetector (Chinoongorora mufananidzo cheAPD) zvinounzwa, maitiro ekushanduka-shanduka kwechimiro chemudziyo anoongororwa, mamiriro ekutsvaga aripo anopfupikiswa, uye kukura kweAPD mune ramangwana kunodzidzwa nenzira inotarisirwa.
1. Nhanganyaya
Chinoongorora chiedza (photodetector) mudziyo unoshandura masaini echiedza kuita masaini emagetsi.chishandiso chekuona mifananidzo che semiconductor, chinhu chinogadzirwa nemufananidzo chinokonzerwa ne photon chinopinda mudunhu rekunze pasi pe voltage inoshandiswa uye chinoumba photocurrent inoyerwa. Kunyangwe pakupindura kwakanyanya, PIN photodiode inogona kungogadzira maviri maviri e electron-hole pairs chete, inova mudziyo usina kupinda mukati. Kuti upindure zvakanyanya, avalanche photodiode (APD) inogona kushandiswa. Mhedzisiro yekuwedzera yeAPD pa photocurrent yakavakirwa pamhedzisiro ye ionization collision. Mune mamwe mamiriro ezvinhu, maerekitironi nemaburi anokurumidza anogona kuwana simba rakakwana rekusangana ne lattice kuti agadzire maviri matsva e electron-hole pairs. Maitiro aya i chain reaction, kuitira kuti maviri e electron-hole pairs anokonzerwa nekunyudzwa kwechiedza anogona kugadzira akawanda e electron-hole pairs uye kugadzira photocurrent huru yechipiri. Nokudaro, APD ine responsiveness yakakwira uye internal gain, izvo zvinovandudza signal-to-noise ratio yemudziyo. APD inonyanya kushandiswa mu long distance kana madiki optical fiber communication systems ane zvimwe zvipingamupinyi pasimba re optical rakagamuchirwa. Parizvino, nyanzvi dzakawanda dzemidziyo yemaziso dzine tariro huru pamusoro pemikana yeAPD, uye dzinotenda kuti tsvakiridzo yeAPD inodiwa kuti pave nemakwikwi epasi rose enzvimbo dzakabatana.
2. Kuvandudzwa kwetekinoroji kwechinhu chinoona mafashamo emvura(APD photodetector)
2.1 Zvinhu
(1)Kana photodetector
Tekinoroji yezvinhu zveSi itekinoroji yakakura inoshandiswa zvakanyanya mumunda we microelectronics, asi haina kukodzera kugadzirira michina iri muhurefu hwewavelength hwe1.31mm ne1.55mm iyo inowanzo gamuchirwa mumunda wekutaurirana kwemaziso.
(2)Ge
Kunyangwe mhinduro yeGe APD yakakodzera zvinodiwa zvekurasikirwa kushoma uye kupararira kushoma mukufambiswa kwefiber ye optical, kune matambudziko makuru mukugadzirira. Pamusoro pezvo, chiyero cheGe cheelectron nehole ionization rate chiri pedyo ne () 1, saka zvakaoma kugadzirira zvishandiso zveAPD zvinoshanda zvakanyanya.
(3)Mukati me0.53Ga0.47As/Mukati meP
Inzira inoshanda yekusarudza In0.53Ga0.47Sekunge chikamu chekunwa chiedza cheAPD neInP sechikamu chekuwanda. Chikamu chekunwa cheIn0.53Ga0.47As i1.65mm, 1.31mm, 1.55mm wavelength inenge 104cm-1 high absorption coefficient, inova ndiyo chinhu chinodiwa pakushandisa light detector pari zvino.
(4)InGaAs photodetector/Mukatimudziyo wekuona foto
Nekusarudza InGaAsP sechikamu chinonyudza chiedza uye InP sechikamu chinowanza, APD ine wavelength yemhinduro ye1-1.4mm, kushanda zvakanaka kwe quantum, rima rakaderera uye kuwedzera kukuru kweavalanche kunogona kugadzirwa. Nekusarudza zvikamu zvakasiyana zve alloy, kushanda kwakanakisa kwema wavelengths chaiwo kunowanikwa.
(5)InGaAs/InAlAs
Chinhu cheIn0.52Al0.48As chine gap rebhandi (1.47eV) uye hachinyure pahurefu hwewavelength hwe1.55mm. Pane humbowo hwekuti In0.52Al0.48As epitaxial layer yakatetepa inogona kuwana hunhu huri nani hwekuwana kupfuura InP se multiplicator layer pasi pemamiriro ekuisa maerekitironi akachena.
(6)InGaAs/InGaAs (P) /InAlAs uye InGaAs/In (Al) GaAs/InAlAs
Mwero weionicization yezvinhu chinhu chakakosha chinokanganisa mashandiro eAPD. Mhedzisiro yacho inoratidza kuti mwero weionicization yekubatana kwe multiplier layer unogona kuvandudzwa nekuisa InGaAs (P) /InAlAs uye In (Al) GaAs/InAlAs superlattice structures. Nekushandisa superlattice structure, mainjiniya eband anogona kudzora artificially asymmetric band edge discontinuity pakati pe conduction band ne valence band values, uye kuona kuti conduction band discontinuity yakakura kupfuura valence band discontinuity (ΔEc>>ΔEv). Zvichienzaniswa neInGaAs bulk materials, InGaAs/InAlAs quantum well electron ionization rate (a) inowedzera zvakanyanya, uye maerekitironi nemaburi anowana simba rakawedzerwa. Nekuda kweΔEc>>ΔEv, zvinogona kutarisirwa kuti simba rinowanikwa nemaerekitironi rinowedzera mwero weionization yeelectron kupfuura mupiro wehole energy kune hole ionization rate (b). Chiyero (k) che electron ionization rate kune hole ionization rate inowedzera. Saka, chigadzirwa che "high gain-bandwidth product" (GBW) uye "low noise performance" zvinogona kuwanikwa nekushandisa ma superlattice structures. Zvisinei, iyi InGaAs/InAlAs quantum well structure APD, iyo inogona kuwedzera k value, inonetsa kushandisa kuma optical receivers. Izvi zvinodaro nekuti multiplier factor inokanganisa maximum response inogumira ne dark current, kwete multiplier noise. Muchimiro ichi, dark current inonyanya kukonzerwa ne tunneling effect yeInGaAs well layer ine "narrow band gap", saka kuiswa kwe "wide-band gap quaternary alloy", senge InGaAsP kana InAlGaAs, panzvimbo peInGaAs se "well layer" ye quantum well structure inogona kudzvinyirira dark current.
Nguva yekutumira: Mbudzi-13-2023