Abstract: Iyo yakakosha chimiro uye nheyo yekushanda yeavalanche photodetector (APD photodetector) zvinounzwa, maitiro ekushanduka kwechimiro chemudziyo anoongororwa, mamiriro ekutsvagisa azvino anopfupikiswa, uye budiriro yeramangwana yeAPD inotarisirwa kuongororwa.
1. Nhanganyaya
Fotodetector mudziyo unoshandura masaini echiedza kuita masaini emagetsi.Mune asemiconductor photodetector, mutakuri wepikicha anonakidzwa nechiitiko photon anopinda dunhu rekunze pasi peiyo yakaiswa bias voltage uye inoumba inoyerwa photocurrent.Kunyangwe pakupindura kwakanyanya, PIN photodiode inokwanisa chete kuburitsa maviri eelectron-hole pairs zvakanyanya, chinova chishandiso chisina kuwana mukati.Kuti upindure zvakanyanya, avalanche photodiode (APD) inogona kushandiswa.Iyo amplification mhedzisiro yeAPD pane photocurrent yakavakirwa pane iyo ionization kudhumhana maitiro.Mune mamwe mamiriro ezvinhu, maerekitironi anomhanyisa uye maburi anogona kuwana simba rakakwana rekudhumhana neretisi kugadzira peya itsva yemaelectron-hole pairs.Iyi nzira ndeyekuita kweketani, kuitira kuti peya ye electron-gomba pairs inogadzirwa nekupfekwa kwechiedza inogona kuburitsa nhamba huru ye electron-hole pairs uye kuumba yakakura yechipiri photocurrent.Naizvozvo, APD ine yakakwira yekupindura uye kuwana kwemukati, iyo inovandudza chiratidzo-kune-ruzha chiyero chemudziyo.APD ichanyanya kushandiswa kureba-kure kana diki optical fiber kutaurirana masisitimu ane zvimwe zvinogumira pane yakagamuchirwa yemagetsi simba.Parizvino, nyanzvi dzakawanda dzemashini ekuona vane tarisiro huru nezve tarisiro yeAPD, uye vanotenda kuti tsvakiridzo yeAPD inofanirwa kusimudzira kukwikwidza kwepasirese kweminda ine hukama.
2. Kuvandudzwa kwehunyanzvi hweAvalanche photodetector(APD photodetector)
2.1 Zvishandiso
(1)Ndiwo photodetector
Si material tekinoroji tekinoroji yakakura iyo inoshandiswa zvakanyanya mumunda wemicroelectronics, asi haina kukodzera kugadzirira kwemidziyo muwavelength renji ye1.31mm uye 1.55mm iyo inogamuchirwa munharaunda yekukurukurirana kwemaziso.
(2)Ge
Kunyangwe iyo spectral mhinduro yeGe APD yakakodzera kune izvo zvinodikanwa zvekurasikirwa kwakaderera uye kuderera kupararira mune optical fiber kutapurirana, kune matambudziko makuru mugadziriro yekugadzirira.Pamusoro pezvo, maerekitironi eGe uye gomba ionization rate reshiyo iri padyo ne () 1, saka zvakaoma kugadzirira yakakwirira-inoshanda APD zvishandiso.
(3)In0.53Ga0.47As/InP
Iyo inzira inoshanda yekusarudza In0.53Ga0.47As seyerenje yekunyudza layer yeAPD uye InP seyakawanda layer.Iyo peak yekunyura yeIn0.53Ga0.47As zvinhu ndeye 1.65mm, 1.31mm,1.55mm wavelength inenge 104cm-1 high absorption coefficient, inova zvinhu zvinofarirwa zvekunyudza layer yemwenje detector parizvino.
(4)InGaAs photodetector/Inphotodetector
Nekusarudza InGaAsP seyakavhenekera mwenje uye InP seyakawanda layer, APD ine mhinduro wavelength ye1-1.4mm, yakakwira quantum kunyatsoshanda, yakaderera yakasviba ikozvino uye yakakwirira avalanche kuwana kunogona kugadzirwa.Nekusarudza akasiyana alloy zvikamu, kuita kwakanakisa kweawavelengths chaiyo kunowanikwa.
(5)InGaAs/InAlAs
In0.52Al0.48As zvinhu zvine bhendi gap (1.47eV) uye haitore pawavelength renji ye1.55mm.Pane humbowo hwekuti mutete In0.52Al0.48As epitaxial layer inogona kuwana zvirinani hunhu pane InP seyakawanda layer pasi pemamiriro eiyo pure electron jekiseni.
(6)InGaAs/InGaAs (P) /InAlAs uye InGaAs/In (Al) GaAs/InAlAs
Iko kukanganisa ionization mwero wezvinhu chinhu chakakosha chinokanganisa mashandiro eAPD.Mhedzisiro yacho inoratidza kuti kudhumhana ionization mwero weiyo multiplier layer inogona kuvandudzwa nekuunza InGaAs (P) /InAlAs uye In (Al) GaAs/InAlAs superlattice zvimiro.Nokushandisa iyo superlattice chimiro, bhendi engineering inogona kudzora asymmetric bhendi kumucheto kusaenderera pakati peiyo conduction band uye valence band kukosha, uye kuve nechokwadi kuti conduction band kuregera kwakakura kudarika valence band discontinuity (ΔEc>> ΔEv).Zvichienzaniswa neInGaAs zvinhu zvakawanda, InGaAs/InAlAs quantum zvakanaka maerekitironi ionization rate (a) inowedzerwa zvakanyanya, uye maerekitironi nemakomba anowedzera simba.Nekuda kweEc>> ΔEv, zvinogona kutarisirwa kuti simba rinowanikwa nemaerekitironi rinowedzera mwero we ionization erekitironi zvakanyanya kupfuura mupiro wegomba simba kugomba ionization rate (b).The reshiyo (k) yeerekitironi ionization rate kune gomba ionization rate inowedzera.Naizvozvo, yakakwira kuwana-bandwidth chigadzirwa (GBW) uye yakaderera ruzha kuita inogona kuwanikwa nekushandisa superlattice zvimiro.Zvisinei, iyi InGaAs/InAlAs quantum well structure APD, iyo inogona kuwedzera k kukosha, yakaoma kushandisa kune vanogamuchira maziso.Izvi zvinodaro nekuti iyo yekuwedzera chinhu inobata iyo yakanyanya kupindurwa inoganhurwa nerima razvino, kwete ruzha rwekuwedzera.Muchimiro ichi, yakasviba yazvino inokonzereswa netunneling mhedzisiro yeInGaAs tsime layer ine yakamanikana bhendi gap, saka kuunzwa kwehupamhi-bhendi gap quaternary alloy, senge InGaAsP kana InAlGaAs, pachinzvimbo cheInGaAs sechitubu chetsime. yeiyo quantum tsime chimiro chinogona kudzvanya yakasviba ikozvino.
Nguva yekutumira: Nov-13-2023