Modulator yemagetsi inoshanda zvakanyanya:firimu rakatetepa lithium niobate modulator
Modulator yemagetsi-optical (Modulator yeEOM) imodulator yakagadzirwa ichishandisa electro-optical effect yemamwe makristaro eelectro-optical, ayo anogona kushandura masaini emagetsi anomhanya kwazvo mumidziyo yekutaurirana kuita masaini ekuona. Kana electro-optic crystal ikaiswa pasi pesimba remagetsi rinoshandiswa, refractive index ye electro-optic crystal inochinja, uye hunhu hwemafungu emaziso ekristaro huchachinjawo zvinoenderana, kuitira kuti pave ne modulation ye amplitude, phase uye polarization state ye optical signal, uye kushandura high-speed electronic signal mumudziyo wekutaurirana kuita optical signal kuburikidza ne modulation.
Parizvino, kune mhando nhatu huru dzemamodulator emagetsi-opticpamusika: ma modulators ane silicon, ma indium phosphide modulators uye thin filmmodulator ye lithium niobatePakati pavo, silicon haina electro-optical coefficient yakananga, mashandiro ayo akajairika, akakodzera chete kugadzirwa kwemodule transceiver module modulator yekutumira data iri kure, indium phosphide kunyangwe yakakodzera module yekutaurirana kwe optical network transceiver yepakati nepakati, asi zvinodiwa pakubatanidzwa zvakanyanya, mutengo wakakwira, uye mashandisirwo acho anoenderana nemimwe miganho. Kusiyana neizvi, lithium niobate crystal haina kungopfuma chete mu photoelectric effect, set photorefractive effect, nonlinear effect, electro-optical effect, acoustic optical effect, piezoelectric effect uye thermoelectric effect zvakaenzana neumwe chete, uye nekuda kwe lattice structure yayo uye rich defect structure, hunhu hwakawanda hwe lithium niobate hunogona kudzorwa zvakanyanya ne crystal composition, element doping, valence state control, nezvimwewo. Kuwana higher photoelectric performance, senge electro-optical coefficient inosvika 30.9pm/V, yakakwira zvakanyanya kupfuura indium phosphide, uye ine small chirp effect (chirp effect: inoreva chiitiko chekuti frequency mukati me pulse inochinja nenguva panguva ye laser pulse transmission process. Chirp effect yakakura inokonzera signal-to-noise ratio yakaderera uye nonlinear effect), termination ratio yakanaka (average power ratio ye "on" state yesignal kune "off" state yayo), uye superior device stability. Pamusoro pezvo, mashandiro emuchina we "thin film lithium niobate modulator" akasiyana neemuchina we "silicon-based modulator" uye "indium phosphide modulator" uchishandisa nzira dze "nonlinear modulation", iyo inoshandisa "linear electro-optical effect" kuisa chiratidzo chakagadziriswa nemagetsi pa "optical carrier", uye "modulation rate" inonyanya kutariswa nekushanda kwe "microwave electrode", saka kumhanya kwakanyanya kwe "modulation" uye "linearity" pamwe nekushandiswa kwesimba kwakaderera zvinogona kuwanikwa. Zvichibva pane zvataurwa pamusoro apa, lithium niobate yave sarudzo yakakodzera yekugadzirira "high-performance electro-optic modulators", iyo ine mashandisirwo akasiyana-siyana mu "100G/400G coherent optical communication networks" uye "ultra-high-speed data centers", uye inogona kusvika kure kwe "transmission distances" anopfuura 100 km.
Lithium niobate sechinhu chinoparadza che "photon revolution", kunyange zvazvo ichienzaniswa nesilicon ne indium phosphide ine mabhenefiti akawanda, asi inowanzoonekwa muchimiro chezvinhu zvakawanda mumudziyo, chiedza chinongogumira kune plane waveguide inoumbwa ne ion diffusion kana proton exchange, musiyano we refractive index unowanzova mudiki (anenge 0.02), saizi yemudziyo yakakura. Zvakaoma kusangana nezvinodiwa zve miniaturization uye kubatanidzwa kwezvishandiso zvemaziso, uye mutsetse wayo wekugadzira uchiri wakasiyana nemutsetse chaiwo we microelectronics process, uye pane dambudziko remutengo wakakwira, saka kuumbwa kwefirimu diki inzira yakakosha yekuvandudza lithium niobate inoshandiswa muma electro-optical modulators.
Nguva yekutumira: Zvita-24-2024