Chinhu chinoshanda chesilicon photonics

Chinhu chinoshanda chesilicon photonics

Zvikamu zvinoshanda zvePhotonics zvinoreva kudyidzana kwakagadzirwa nemaune pakati pechiedza nezvinhu. Chikamu chinoshanda chephotonics imodulator ye optical. Zvese zviripo zvinovakirwa pasiliconma modulators emazisozvakavakirwa pamhedzisiro ye plasma free carrier. Kuchinja huwandu hwema electron nemaburi ari mu silicon material ne doping, electrical kana optical methods kunogona kuchinja complex refractive index yayo, maitiro anoratidzwa mu equations (1,2) anowanikwa nekuisa data kubva kuSoref naBennett pa wavelength ye 1550 nanometers. Zvichienzaniswa nema electron, maburi anokonzera chikamu chikuru chekuchinja kwe refractive index chaiyo uye yekufungidzira, kureva kuti, anogona kugadzira shanduko huru ye phase kune shanduko yekurasikirwa kwakapihwa, saka muMach-Zehnder modulatorsuye ma "ring modulators", zvinowanzo shandiswa kushandisa maburi kugadziramamodulator echikamu.

Mhando dzakasiyana-siyanamodulator yesilicon (Si)Mhando dzinoratidzwa muMufananidzo 10A. Mumodulator yekuisa jekiseni remuchina, chiedza chinowanikwa musilicon yemukati mukati memugero wakakura kwazvo wepini, uye maerekitironi nemaburi zvinopinzwa. Zvisinei, mamodulator akadaro anononoka, kazhinji ane bandwidth ye500 MHz, nekuti maerekitironi nemaburi anotora nguva yakareba kuti asanganiswezve mushure mekupinza jekiseni. Nokudaro, chimiro ichi chinowanzo shandiswa se variable optical attenuator (VOA) pane semodulator. Mumodulator yekubvisa jekiseni remuchina, chikamu chechiedza chiri mumodulator yakamanikana yepn, uye upamhi hwekupera kwemodulator yepn hunochinjwa nemagetsi anoshandiswa. Modulator iyi inogona kushanda nekumhanya kunodarika 50Gb/s, asi ine kurasikirwa kukuru kwekupinza kwemashure. Vpil yakajairika i2 V-cm. Modulator yesimbi oxide semiconductor (MOS) (chaizvoizvo semiconductor-oxide-semiconductor) ine thin oxide layer mumodulator yepn. Zvinobvumira kuunganidzwa kwemuchina wekutakura pamwe nekudzikira kwemuchina wekutakura, zvichibvumira VπL diki yeinenge 0.2 V-cm, asi zvine dambudziko rekurasikirwa kwakanyanya kwemaziso uye kugona kwakanyanya pahurefu hweyuniti. Pamusoro pezvo, kune maSiGe electrical absorption modulators akavakirwa pakufamba kweSiGe (silicon Germanium alloy) band edge. Pamusoro pezvo, kune magraphene modulators anovimba negraphene kuti achinje pakati pesimbi dzinonyudza uye transparent insulators. Izvi zvinoratidza kusiyana kwekushandiswa kwenzira dzakasiyana kuti uwane high-speed, low-loss optical signal modulation.

Mufananidzo 10: (A) Dhayagiramu yezvikamu zvakasiyana-siyana zvemagadzirirwo akasiyana-siyana esilicon-based optical modulator uye (B) dhayagiramu yezvikamu zvakasiyana-siyana zvemagadzirirwo ekuona optical.

Zviyereso zvechiedza zvakati wandei zvakagadzirwa nesilicon zvinoratidzwa muMufananidzo 10B. Chinhu chinonyudza igermanium (Ge). Ge inokwanisa kunyudza chiedza pahurefu hwema wavelength kusvika kuma microns 1.6. Kuruboshwe ndiko kunoratidzwa pin structure yakabudirira zvikuru nhasi. Inoumbwa neP-type doped silicon iyo Ge inokura. Ge naSi vane 4% lattice mismatch, uye kuitira kuderedza dislocation, tete reSiGe rinotanga kukura sebuffer layer. N-type doping inoitwa pamusoro peGe layer. Photodiode yesimbi-semiconductor-metal (MSM) inoratidzwa pakati, uye APD (Chinoongorora Mufananidzo weAvalanche) inoratidzwa kurudyi. Nzvimbo yemafashamo muAPD iri muSi, ine ruzha rwakaderera zvichienzaniswa nenzvimbo yemafashamo muzvinhu zveGroup III-V.

Parizvino, hapana mhinduro dzine zvakanakira zviri pachena mukubatanidza optical gain nesilicon photonics. Mufananidzo 11 unoratidza sarudzo dzinoverengeka dzinogoneka dzakarongwa zvichienderana nechikamu chekuunganidza. Kuruboshwe kure kune monolithic integrations dzinosanganisira kushandiswa kwegermanium (Ge) yakakurirwa sezvinhu zvekuwana optical, erbium-doped (Er) glass waveguides (yakadai seAl2O3, inoda optical pumping), uye epitaxially growned gallium arsenide (GaAs) quantum dots. Chikamu chinotevera iwafer to wafer assembly, inosanganisira oxide uye organic bonding munzvimbo yeIII-V group gain. Chikamu chinotevera ichip-to-wafer assembly, iyo inosanganisira kuisa III-V group chip mu cavity yesilicon wafer uye wobva wagadzira waveguide structure. Chakanakira nzira iyi yekutanga yetatu column ndechekuti mudziyo unogona kuyedzwa zvizere mukati mewafer usati wacheka. Column yekurudyi ichip-to-chip assembly, kusanganisira direct coupling yesilicon chips kune III-V group chips, pamwe ne coupling kuburikidza ne lens uye grating couplers. Mafambiro ari kuita mashandisirwo ebhizinesi ari kubva kurudyi kuenda kuruboshwe rwechati kuenda kune mhinduro dzakabatana uye dzakabatana.

Mufananidzo 11: Kubatanidzwa kwe optical gain mu silicon-based photonics. Paunofamba kubva kuruboshwe kuenda kurudyi, nzvimbo yekugadzira inodzokera zvishoma nezvishoma mukuita.