Nhanganyaya kuMaumbirwo uye Mashandiro eThin Film Lithium Niobate Electro optic Modulator

Nhanganyaya kuMaumbirwo neMashandiro eFirimu Rakatetepa reLithium Niobate Electro optic Modulator
An modulator yemagetsi-opticzvakavakirwa pazvimiro zvakasiyana, marefu emvura, uye mapuratifomu efirimu rakatetepa re lithium niobate, uye kuenzanisa kwakazara kwekushanda kwemhando dzakasiyana dzeMamodulator eEOM, pamwe nekuongorora tsvakiridzo nekushandiswa kwemamodulator e lithium niobate firimu rakatetepamune dzimwe nzvimbo.

1. Non resonant cavity thin film lithium niobate modulator
Rudzi urwu rwe modulator rwakavakirwa pamhedzisiro yakanaka ye electro-optic ye lithium niobate crystal uye chishandiso chakakosha chekuwana kutaurirana kwe optical nekukurumidza uye kure kure. Kune maumbirwo matatu makuru:
1.1Traveling wave electrode MZI modulator: Iyi ndiyo dhizaini yakajairika. Boka rekutsvagisa reLon č ar paHarvard University rakatanga kuwana vhezheni yepamusoro-soro muna 2018, nekuvandudzwa kwakatevera kunosanganisira capacitive loading yakavakirwa pa quartz substrates (high bandwidth asi isingaenderane ne silicon-based) uye silicon-based compatible yakavakirwa pa substrate hollowing, kuwana high bandwidth (>67 GHz) uye high-speed signal (senge 112 Gbit/s PAM4) transmission.
1.2 Folding MZI modulator: Kuti ipfupise saizi yemudziyo uye ienderane nema compact modules akadai seQSFP-DD, polarization treatment, cross waveguide kana inverted microstructure electrodes anoshandiswa kuderedza urefu hwemudziyo nehafu uye kuwana bandwidth ye60 GHz.
1.3Single/Dual Polarization Coherent Orthogonal (IQ) Modulator: Inoshandisa high-order modulation format kuti iwedzere transmission rate. Boka rekutsvagisa reCai paSun Yat sen University rakawana yekutanga on-chip single polarization IQ modulator muna 2020. Dual polarization IQ modulator yakagadzirwa mune ramangwana ine mashandiro ari nani, uye shanduro yakavakirwa pa quartz substrate yakaisa rekodhi imwe chete ye transmission rate ye1.96 Tbit/s.

2. Resonant cavity type thin-film lithium niobate modulator
Kuti uwane ma modulators e bandwidth madiki neakuru, kune akasiyana marongerwo e resonant cavity anowanikwa:
2.1 Photonic crystal (PC) uye micro ring modulator: Boka rekutsvagisa raLin paYunivhesiti yeRochester rakagadzira modulator yekutanga ye photonic crystal inoshanda zvakanyanya. Pamusoro pezvo, micro ring modulators dzakavakirwa pakubatanidzwa kwesilicon lithium niobate uye kubatana kwakafanana dzakakurudzirwawo, zvichiita kuti pave nebandwidths yeGHz yakati wandei.
2.2Bragg grating resonant cavity modulator: inosanganisira Fabry Perot (FP) cavity, waveguide Bragg grating (WBG), uye slow light (SL) modulator. Zvivakwa izvi zvakagadzirirwa kuenzana saizi, process tolerances, uye mashandiro, semuenzaniso, 2 × 2 FP resonant cavity modulator inowana bandwidth yakakura kwazvo inodarika 110 GHz. Slow light modulator yakavakirwa paBragg grating yakabatana inowedzera bandwidth inoshanda.

3. Modulator ye lithium niobate modulator ine firimu rakatetepa rakasanganiswa zvakasiyana
Kune nzira nhatu huru dzekubatanidza kuenderana kwetekinoroji yeCMOS pamapuratifomu akavakirwa pasilicon nekushanda kwakanaka kwemodulation ye lithium niobate:
3.1 Kubatanidzwa kwemhando dzakasiyana dzebhondi: Nekubatana zvakananga nebenzocyclobutene (BCB) kana silicon dioxide, thin film lithium niobate inotamisirwa kune silicon kana silicon nitride platform, zvichiita kuti pave newafer level, high temperature stable integration. Modulator inoratidza high bandwidth (>70 GHz, kunyange kupfuura 110 GHz) uye high-speed signal transmission.
3.2 Kubatanidzwa kwakasiyana-siyana kwe silicon kana silicon nitride pa thin film lithium niobate se load waveguide kunoitawo kuti electro-optic modulation ishande zvakanaka.
3.3 Kubatanidzwa kwakasiyana-siyana kwekudhinda kweMicro transfer (μ TP): Iyi tekinoroji inotarisirwa kushandiswa pakugadzira zvinhu zvakakura, iyo inotamisa zvishandiso zvinoshanda zvakagadzirwa kare kuti zvinange machipisi kuburikidza nemidziyo yakanyatsogadzirwa, zvichidzivirira kuomarara mushure mekugadzirisa. Yashandiswa zvinobudirira kumapuratifomu esilicon nitride nemasilicon-based, zvichiita kuti bandwidths yemakumi eGHz isvike.

Mukupfupisa, chinyorwa chino chinotsanangura zvakarongeka nzira ye tekinoroji yemamodulators e-electro-optic yakavakirwa pamapuratifomu e-thin film lithium niobate, kubva pakutsvaga magadzirirwo e-high-performance uye large bandwidth non resonant cavity, kuongorora magadzirirwo e-miniaturized resonant cavity, uye kubatanidzwa nemapuratifomu e-photonic akagadzirwa nesilicon. Chinoratidza kugona kukuru uye kufambira mberi kuri kuramba kuripo kwemamodulators e-thin film lithium niobate mukupinda mumatambudziko ekushanda kwemamodulators echinyakare uye kuwana kutaurirana kwe-optical nekukurumidza.


Nguva yekutumira: Kurume-31-2026