Muganho wakaderera we infraredchinhu chinoona mafashamo emvura
Chinoongorora mafashamo einfrared ( infrared avalanche photodetector)Chinoongorora mufananidzo cheAPD) ikirasi yezvishandiso zvemagetsi zve semiconductorizvo zvinoburitsa gain yakakwira kuburikidza ne collision ionization effect, kuitira kuti zvikwanise kuona ma photon mashoma kana kunyange ma photon rimwe chete. Zvisinei, muzvimiro zve APD photodetector zvemazuva ano, nzira yekupararira kwe carrier isingaenzane inotungamira mukurasikirwa nesimba, zvekuti avalanche threshold voltage inowanzo fanirwa kusvika 50-200 V. Izvi zvinowedzera kudiwa kwe drive voltage uye readout circuit design yemudziyo, zvichiwedzera mitengo uye zvichideredza mashandisirwo akakura.
Munguva pfupi yapfuura, tsvakurudzo yekuChina yakapa chimiro chitsva cheavalanche pedyo neinfrared detector ine voltage yakaderera yeavalanche threshold uye high sensitivity. Zvichibva pa self-doping homojunction yeatomic layer, avalanche photodetector inogadzirisa kupararira kunokuvadza kunokonzerwa nemamiriro ekusagadzikana kweinterface izvo zvisingadzivisike mu heterojunction. Panguva imwecheteyo, simba rakasimba re "peak" remagetsi rinokonzerwa nekupwanya kwekushandura rinoshandiswa kusimudzira kudyidzana kwe coulomb pakati pevatakuri, kudzvinyirira kupararira kwakatongwa ne phonon mode, uye kuwana kushanda kwakapetwa kaviri kwevatakuri vasina equilibrium. Pakupisa kwemukamuri, simba re threshold riri pedyo ne theoretical limit Eg (Eg i band gap ye semiconductor) uye infrared avalanche sensitivity yekuona kusvika pa 10000 photon level.
Chidzidzo ichi chakavakirwa paatomu-layer self-doped tungsten diselenide (WSe₂) homojunction (two-dimensional transition metal chalcogenide, TMD) senzira yekuwana mafashamo emvura anofambisa chaji. Kupatsanurwa kwenzvimbo kunoonekwa nekugadzira topography step mutation kuti iite kuti pave nesimba remagetsi re "spike" panzvimbo ine mutant homojunction interface.
Pamusoro pezvo, ukobvu hweatomu hunogona kudzvinyirira mashandiro ekupararira anodzorwa ne phonon mode, uye kuona kukurumidza uye kuwanda kwemutakuri asina kuenzana nekurasikirwa kushoma kwazvo. Izvi zvinounza simba remuganho weavalanche patembiricha yemukamuri pedyo nemuganhu wedzidziso kureva kuti semiconductor material bandgap Eg. Avalanche threshold voltage yakaderedzwa kubva pa50 V kusvika pa1.6 V, zvichibvumira vaongorori kushandisa maturikirwo edhijitari ane voltage shoma kuti vafambise avalanche.mudziyo wekuona fotopamwe chete nemadhiraivha emagetsi nematransistors. Chidzidzo ichi chinoona kushandurwa kwakanaka uye kushandiswa kwesimba risingaenzaniswi rekutakura zvinhu kuburikidza nekugadzira mhedzisiro yekuwanda kweavalanche, izvo zvinopa maonero matsva ekuvandudzwa kwechizvarwa chinotevera chetekinoroji yekuona infrared infrared ine hunyanzvi hwepamusoro, threshold yakaderera uye high gain.
Nguva yekutumira: Kubvumbi-16-2025