Low threshold infraredAvalanche photodetector
Iyo infrared avalanche photodetector (APD photodetector) ikirasi yesemiconductor photoelectric zvishandisoiyo inoburitsa hupfumi hwepamusoro kuburikidza nekudhumhana ionization athari, kuitira kuti uwane kugona kwekuona kwemafotoni mashoma kana kunyange mafotoni ega. Zvisinei, mune zvakajairika APD photodetector zvimiro, iyo isiri-equilibrium carrier scattering process inotungamirira pakurasikirwa kwesimba, zvakadai kuti avalanche threshold voltage inowanzoda kusvika 50-200 V. Izvi zvinoisa zvichemo zvepamusoro pamagetsi edhidhiyo uye kuverenga kwedunhu rekugadzirisa, kuwedzera mari uye kuderedza kushandiswa kwakakura.
Munguva pfupi yadarika, tsvakiridzo yeChinese yakurudzira chimiro chitsva cheavalanche padhuze infrared detector ine yakaderera avalanche pachikumbaridzo voltage uye yakanyanya kunzwa. Zvichienderana ne-self-doping homojunction yeatomic layer, iyo avalanche photodetector inogadzirisa kupararira kunokuvadza kunokonzerwa neinterface defect state iyo isingadzivisike muheterojunction. Zvichakadaro, nzvimbo yakasimba yenzvimbo yemagetsi "peak" inokonzerwa neshanduro symmetry breaking inoshandiswa kusimudzira coulomb kuwirirana pakati pevatakuri, kudzvinyirira off-ndege phonon mode inotonga kupararira, uye kuwana yakakwirira kaviri kushanda zvakanaka kwevasina-equilibrium vatakuri. Patembiricha yekamuri, simba remukumbaridzo riri padyo neiyo theoretical muganhu Eg (Eg ibhendi gap resemiconductor) uye kunzwisiswa kwekuona kweiyo infrared avalanche detector inosvika 10000 photon level.
Ichi chidzidzo chakavakirwa paatomu-layer self-doped tungsten diselenide (WSe₂) homojunction (two-dimensional transition metal chalcogenide, TMD) senzira yekuwana yekuchaja inotakura mavhairasi. Kutyoka kwepakati pekushandura symmetry kunoitwa nekugadzira danho repamusoro-soro rekuchinja kuti ripe simba renzvimbo yemagetsi "spike" pa mutant homojunction interface.
Uye zvakare, ukobvu hweatomu hunogona kudzvanya nzira yekuparadzira inodzorwa neiyo phonon modhi, uye kuona kukwidziridza uye kuwanda maitiro easina-equilibrium mutakuri nekurasikirwa kwakanyanya. Izvi zvinounza iyo avalanche pachikumbaridzo simba pakamuri tembiricha pedyo neiyo theoretical muganhu kureva semiconductor material bandgap Eg. Iyo avalanche pachikumbaridzo voltage yakaderedzwa kubva pa50 V kusvika 1.6 V, ichibvumira vaongorori kushandisa akakura akadzika-voltage dhijitari maseketi kutyaira avalanche.photodetectorpamwe nekutyaira diodes uye transistors. Ichi chidzidzo chinoona kushandurwa kwakanaka uye kushandiswa kwesimba risingaenzaniswi rekutakura simba kuburikidza nekugadzirwa kweiyo low threshold avalanche multiplication effect, iyo inopa maonero matsva ekuvandudzwa kwechizvarwa chinotevera chekunyanya kunzwisisika, kuderera kwechikumbaridzo uye kuwana yakakwirira yeavalanche infrared yekuongorora teknolojia.
Nguva yekutumira: Kubvumbi-16-2025