InGaAs ndeimwe yezvinhu zvakanakisisa zvekuwana mhinduro yepamusoro uyechishandiso chekuona mafoto chinomhanya zvikuruChekutanga, InGaAs imhando ye semiconductor inoburitswa zvakananga ne bandgap, uye upamhi hwayo hwe bandgap hunogona kudzorwa nechiyero chiri pakati peIn neGa, zvichigonesa kuona zviratidzo zve optical zvema wavelength akasiyana. Pakati pavo, In0.53Ga0.47As inonyatsoenderana neInP substrate lattice uye ine light absorption coefficient yakakwira kwazvo mu optical communication band. Ndiyo inonyanya kushandiswa mukugadziriramudziyo wekuona fotouye ine simba guru rerima uye responsivity performance. Chechipiri, zvese zviri zviviri InGaAs neInP zvine electron drift velocities yakakwira, ne saturated electron drift velocities dzavo dziri 1×107cm/s. Zvichakadaro, pasi pemagetsi chaiwo, InGaAs neInP zvinhu zvinoratidza electron velocity overshoot effects, ne overshoot velocities dzavo dzichisvika 4×107cm/s uye 6×107cm/s zvichiteerana. Zvinobatsira kuwana high crossing bandwidth. Parizvino, InGaAs photodetectors ndiyo inonyanya kushandiswa pakuona maficha. Mumusika, nzira yekubatanidza pamusoro-incident ndiyo inonyanya kushandiswa. Zvigadzirwa zve surface-incident detector zvine 25 Gaud/s uye 56 Gaud/s zvinogona kutogadzirwa zvakawanda. Zvidiki, back-incident, uye high-bandwidth surface-incident detectors zvakagadzirwawo, kunyanya zvekushandisa zvakaita se high speed uye high saturation. Zvisinei, nekuda kwekusakwana kwenzira dzavo dzekubatanidza, ma "surface incidence detectors" akaoma kubatanidza nemamwe ma "optoelectronic devices". Nokudaro, nekuwedzera kwekuda kwekubatanidzwa kwe "optoelectronic", ma "waveguide" akabatana neInGaAs photodetectors ane mashandiro akanaka uye akakodzera kubatanidzwa ave chinhu chinonyanya kutsvagwa. Pakati pawo, ma "commercial InGaAs photodetector modules" e70GHz ne110GHz anenge ese anoshandisa ma "waveguide coupling structures". Zvichienderana nemusiyano wezvinhu zve substrate, ma "waveguide" akabatana neInGaAs photodetectors anogona kupatsanurwa mumhando mbiri: INP-based neSi-based. Zvinhu zve epitaxial paInP substrates zvine mhando yepamusoro uye zvakakodzera kugadzirwa kwemidziyo inoshanda zvakanyanya. Zvisinei, kune zvinhu zveboka reIII-V zvakakurirwa kana kusungirirwa paSi substrates, nekuda kwekusawirirana kwakasiyana pakati pezvinhu zveInGaAs neSi substrates, mhando yezvinhu kana interface haina kunaka, uye kuchine nzvimbo yakakura yekuvandudza mashandiro emidziyo.
Kugadzikana kwe photodetector munzvimbo dzakasiyana-siyana dzekushandisa, kunyanya mumamiriro ezvinhu akaoma, chimwe chezvinhu zvakakosha mukushandiswa kunoshanda. Mumakore achangopfuura, mhando itsva dze detector dzakadai se perovskite, organic uye two-dimensional materials, dzakakwezva kutariswa kukuru, dzichiri kusangana nematambudziko akawanda maererano nekugadzikana kwenguva refu nekuda kwekuti zvinhu pachazvo zvinokanganiswa nyore nyore nezvinhu zvezvakatipoteredza. Panguva iyi, maitiro ekubatanidza zvinhu zvitsva haasati akura, uye kutsvaga kwakawanda kuchiri kudiwa kuti kugadzirwa kukuru uye kushanda kuenderane.
Kunyangwe kuunzwa kwema inductors kuchigona kuwedzera bandwidth yemidziyo parizvino, haisi yakakurumbira mumasisitimu ekutaurirana edhijitari. Saka, maitiro ekudzivirira kukanganisa kwakaipa kuti uderedze zvakanyanya maparamendi eRC emuchina ndeimwe yenzira dzekutsvagisa dze high-speed photodetector. Chechipiri, sezvo bandwidth yema waveguide coupled photodetectors ichiramba ichiwedzera, muganho uripo pakati pebandwidth uye responsivity unotanga kubuda zvakare. Kunyangwe ma Ge/Si photodetectors neInGaAs photodetector ine 3dB bandwidth inodarika 200GHz zvakashumwa, mabasa avo haasi kugutsa. Maitiro ekuwedzera bandwidth uchichengetedza responsivity yakanaka inyaya yakakosha yekutsvagisa, iyo inogona kuda kuunzwa kwezvinhu zvitsva zvinoenderana neprocess (high mobility uye high absorption coefficient) kana magadzirirwo matsva emidziyo inomhanyisa kugadzirisa. Pamusoro pezvo, sezvo bandwidth yemuchina ichiwedzera, mamiriro ekushandiswa kwema detectors mu microwave photonic links achawedzera zvishoma nezvishoma. Kusiyana ne small optical power incidence uye high-sensitivity detection mu optical communication, mamiriro aya, zvichibva pa high bandwidth, ane high saturation power demand ye high-power incidence. Zvisinei, michina ine bandwidth yakawanda inowanzoshandisa zvivakwa zvidiki, saka hazvisi nyore kugadzira ma photodetector ane simba rekukwira uye rakakwirira, uye zvimwe zvitsva zvinogona kudiwa mukubvisa nekupisa kwemidziyo. Chekupedzisira, kuderedza rima remagetsi ekuona anomhanya richiri dambudziko iro ma photodetector ane lattice mismatch anofanira kugadzirisa. Dark current inonyanya kuenderana nehunhu hwekristaro uye mamiriro epamusoro pechinhu chacho. Nokudaro, maitiro akakosha akadai se high-quality heteroepitaxy kana bonding under lattice mismatch systems anoda kutsvagurudza kwakawanda nekudyara mari.
Nguva yekutumira: Nyamavhuvhu-20-2025