Higher integrated thin film lithium niobate electro-optic modulator

Kurongeka kwakakwiriramodulator yemagetsi-opticuye kushandiswa kwe microwave photon
Nekuwedzera kwezvinodiwa zvemasisitimu ekutaurirana, kuitira kuti vawedzere kuvandudza mashandiro ekutumira masaini, vanhu vachabatanidza maphoton nemaerekitironi kuti vawane mabhenefiti anoenderana, uye ma microwave photonics achazvarwa. Electro-optical modulator inodiwa kuti magetsi achinje kuita chiedza mukati.masisitimu e photonic e microwave, uye danho iri rinokosha rinowanzo sarudza mashandiro ehurongwa hwese. Sezvo kushandurwa kwechiratidzo cheredhiyo kuita optical domain kuri maitiro echiratidzo cheanalog, uye zvakajairikamamodulator emagetsi-opticalZvine kusawirirana kwemukati, pane kukanganisa kukuru kwechiratidzo mukushandura. Kuti zviite sekuti linear modulation iri nyore, nzvimbo yekushanda yemodulator inowanzo gadziriswa panzvimbo ye orthogonal bias, asi haisati yakwanisa kusangana nezvinodiwa zve microwave photon link ye linearity yemodulator. Electro-optic modulators dzine linearity yakakwira dzinodiwa nekukurumidza.

Kuchinja kwemhando yepamusoro ye refractive index yezvinhu zvesilicon kunowanzoitwa ne free carrier plasma dispersion (FCD) effect. FCD effect uye PN junction modulation hazvina kuenzana, izvo zvinoita kuti silicon modulator isanyanya kuenzana pane lithium niobate modulator. Zvinhu zveLithium niobate zvinoratidza zvakanaka kwazvo.modulation yemagetsi-opticalZvimiro nekuda kwePucker effect yavo. Panguva imwe chete, lithium niobate material ine zvakanakira zvebandwidth yakakura, hunhu hwakanaka hwemodulation, kurasikirwa kushoma, kubatanidzwa kuri nyore uye kuenderana ne semiconductor process, kushandiswa kwethin film lithium niobate kugadzira high-performance electro-optical modulator, zvichienzaniswa nesilicon inenge isina "short plate", asiwo kuwana high linearity. Thin film lithium niobate (LNOI) electro-optic modulator pa insulator yave nzira inovimbisa yekuvandudza. Nekuvandudzwa kwetekinoroji yekugadzirira zvinhu zve thin film lithium niobate uye waveguide etching technology, kushanda kwepamusoro kwekushandura uye kubatanidzwa kwepamusoro kwethin film lithium niobate electro-optic modulator kwave kuri munda wedzidzo yepasi rose neindasitiri.

Hunhu hwefirimu rakatetepa re lithium niobate
MuUnited States, DAP AR planning yakaita ongororo inotevera yezvinhu zve lithium niobate: kana nzvimbo yepakati pekuchinja kwemagetsi yakatumidzwa zita rezvinhu zve silicon zvinoita kuti zvikwanisike, saka nzvimbo yekuzvarwa kwekushanduka kwe photonics ingangotumidzwa zita re lithium niobate. Izvi zvinodaro nekuti lithium niobate inobatanidza electro-optical effect, acousto-optical effect, piezoelectric effect, thermoelectric effect uye photorefractive effect mune imwe chete, kungofanana nezvinhu zve silicon mumunda we optics.

Panyaya yehunhu hwe optical transmission, InP material ine kurasikirwa kukuru kwe on-chip transmission nekuda kwekutorwa kwechiedza mu 1550nm band inowanzoshandiswa. SiO2 ne silicon nitride zvine hunhu hwe transmission hwakanakisa, uye kurasikirwa kunogona kusvika padanho re ~ 0.01dB/cm; Parizvino, kurasikirwa kwe waveguide kwe thin-film lithium niobate waveguide kunogona kusvika padanho re 0.03dB/cm, uye kurasikirwa kwe thin-film lithium niobate waveguide kune mukana wekudzikiswa zvakanyanya nekuvandudzwa kuri kuramba kuchiitwa tekinoroji mune ramangwana. Nokudaro, thin film lithium niobate material icharatidza kushanda kwakanaka kwe passive light structures dzakadai se photosynthetic path, shunt uye microring.

Panyaya yekugadzira chiedza, InP chete ndiyo inokwanisa kuburitsa chiedza zvakananga; Saka, pakushandisa ma microwave photons, zvakakosha kuisa InP based light source paLNOI based photonic integrated chip nenzira ye backloading welding kana epitaxial growth. Panyaya ye light modulation, zvakasimbiswa pamusoro apa kuti thin film lithium niobate material iri nyore kuwana modulation bandwidth yakakura, yakaderera half-wave voltage uye yakaderera transmission loss pane InP naSi. Uyezve, linearity yakakwira ye electro-optical modulation ye thin film lithium niobate materials yakakosha kune ese ma microwave photon applications.

Panyaya ye optical routing, mhinduro ye electro-optical inomhanyisa ye thin film lithium niobate material inoita kuti LNOI based optical switch ikwanise kuchinja routing inomhanyisa, uye simba rekushandisa microwave photon rakadai rakadererawo. Pakushandisa tekinoroji ye integrated microwave photon, optically controlled beamforming chip ine simba rekushandura inomhanyisa kuti isangane nezvinodiwa zve fast beam scanning, uye hunhu hwe ultra-low power consumption hwakanyatsoenderana nezvinodiwa zve large-scale phased array system. Kunyangwe InP based optical switch ichigonawo kuita high-speed optical path switching, inozounza ruzha rukuru, kunyanya kana multilevel optical switch yaiswa cascaded, noise coefficient ichaderera zvakanyanya. Silicon, SiO2 uye silicon nitride materials zvinongogona kushandura nzira dze optical kuburikidza ne thermo-optical effect kana carrier dispersion effect, iyo ine disadvantages ye high power consumption uye slow switching speed. Kana array ye phased array yakakura, haigone kusangana nezvinodiwa zve power consumption.

Panyaya yekuwedzera optical,amplifier ye optical ye semiconductor (SOA) zvichibva paInP, yagara ichishandiswa mukutengeserana, asi ine zvayakaipira zve high noise coefficient uye low saturation output power, izvo zvisingakodzeri kushandiswa kwema microwave photons. Maitiro ekuwedzera simba e thin-film lithium niobate waveguide zvichienderana ne periodic activation uye inversion anogona kuita kuti pave neruzha rwakaderera uye simba guru rekuwedzera simba re on-chip, izvo zvinogona kusangana nezvinodiwa zve integrated microwave photon technology ye on-chip optical amplification.

Panyaya yekuona chiedza, thin film lithium niobate ine hunhu hwakanaka hwekutumira chiedza kuchiedza mu 1550 nm band. Basa rekushandura photoelectric harigone kuitwa, saka pakushandiswa kwe microwave photon, kuitira kuti zvizadzise zvinodiwa zvekushandura photoelectric pa chip. InGaAs kana Ge-Si detection units dzinofanirwa kuiswa pama LNOI based photonic integrated chips ne backloading welding kana epitaxial growth. Panyaya yekubatanidza ne optical fiber, nekuti optical fiber pachayo iSiO2 material, mode field yeSiO2 waveguide ine dhigirii yepamusoro yekufananidza ne mode field ye optical fiber, uye coupling ndiyo inonyanya kunyorerwa. Mode field diameter ye strongly restricted waveguide ye thin film lithium niobate inenge 1μm, iyo yakasiyana zvikuru ne mode field ye optical fiber, saka proper mode spot transformation inofanira kuitwa kuti ienderane ne mode field ye optical fiber.

Panyaya yekubatanidzwa, kana zvinhu zvakasiyana-siyana zvine mukana wekubatanidza wakakwira zvinoenderana nehukuru hwewaveguide (hunokanganiswa nekuganhurirwa kwemunda wewaveguide mode). Waveguide yakaganhurirwa zvakanyanya inobvumira hupamhi hudiki hwekukombama, izvo zvinoita kuti hupamhi huve hwakakwirira. Nokudaro, thin-film lithium niobate waveguides ine mukana wekuwana hupamhi hwepamusoro. Nokudaro, kuoneka kwethin film lithium niobate kunoita kuti zvinhu zve lithium niobate zvikwanise kutamba basa re "silicon" re optical. Pakushandisa ma microwave photons, zvakanakira zvethin film lithium niobate zviri pachena.