Mhando ye photodetector mudziyo chimiro

Type yephotodetector mudziyochimiro
Photodetectormudziyo unoshandura chiratidzo chemagetsi kuita chiratidzo chemagetsi, chimiro chayo uye zvakasiyana-siyana, zvinogona kukamurwa zvakanyanya muzvikamu zvinotevera:
(1) Photoconductive photodetector
Kana mafotoconductive zvishandiso zvakafumurwa kuchiedza, iyo photogenerated mutakuri inowedzera conductivity yavo uye inoderedza kuramba kwavo. Vatakuri vanofara pakupisa kwekamuri vanofamba nenzira inotungamira pasi pechiito chemunda wemagetsi, nokudaro vachigadzira ikozvino. Pasi pemamiriro echiedza, maerekitironi anofara uye shanduko inoitika. Panguva imwecheteyo, vanodonha pasi pechiito chemunda wemagetsi kuti vagadzire photocurrent. Izvo zvinokonzeresa mafotogenerated vatakuri vanowedzera conductivity yemudziyo uye nokudaro kuderedza kuramba. Photoconductive photodetectors inowanzoratidza kuwedzera kwepamusoro uye kupindura kukuru mukushanda, asi haigoni kupindura kune-high-frequency optical signals, saka kukurumidza kupindura kunononoka, izvo zvinoderedza kushandiswa kwezvigadzirwa zvephotoconductive mune zvimwe zvinhu.

(2)PN photodetector
PN photodetector inoumbwa nekubatana pakati peP-mhando semiconductor zvinhu uye N-mhando semiconductor zvinhu. Kubatana kusati kwaumbwa, zvinhu zviviri izvi zviri mumamiriro akasiyana. Iyo Fermi level muP-type semiconductor iri padyo nekumucheto kwevalence bhendi, nepo Fermi level muN-mhando semiconductor iri pedyo nekumucheto kwebhendi rekufambisa. Panguva imwecheteyo, nhanho yeFermi yeN-mhando yezvinhu iri kumucheto kwebhendi rekufambisa inoramba ichichinjika ichidzika kusvika nhanho yeFermi yezvinhu zviviri iri munzvimbo imwechete. Shanduko yenzvimbo ye conduction bhendi uye valence bhendi inoperekedzwawo nekukotama kwebhendi. Iyo PN junction iri mukuenzanisa uye ine yunifomu yeFermi level. Kubva pachikamu chekuongorora mutakuri wechaji, mazhinji evatakuri vemhando yeP-mhando maburi, nepo mazhinji ekutakura machaji muN-mhando zvinhu maerekitironi. Kana zvinhu zviviri izvi zvasangana, nekuda kwekusiyana kwemutakuri, maerekitironi ari mumhando yeN-mhando anozopararira kuenda kuP-mhando, nepo maerekitironi ari mumhando yeN-mhando inopararira ichienda kune imwe nzira kune maburi. Iyo nzvimbo isina kubhadharwa yakasiiwa nekupararira kwema electrons nemakomba ichaumba yakavakirwa-mukati munda wemagetsi, uye yakavakirwa-mukati yemagetsi munda ichaita mutakuri wekutakura, uye kutungamira kwekukukurwa kwakangopesana negwara rekupararira, zvinoreva kuti kuumbwa kwenzvimbo yemagetsi yakavakirwa-mukati kunodzivirira kupararira kwevatakuri, uye kune zvese kupararira uye kukukurwa mukati mePN junction kusvika mhando mbiri dzekufamba dzakaenzana, kuitira kuti iyo static carrier inoyerera iite zero. Internal dynamic balance.
Apo iyo PN junction inoratidzwa kune chiedza chechiedza, simba re photon rinoendeswa kune mutakuri, uye photogenerated carrier, kureva, photogenerated electron-hole pair, inogadzirwa. Pasi pechiito chemunda wemagetsi, erekitironi negomba zvinokukurwa kuenda kunharaunda yeN uye P dunhu zvichiteerana, uye inonangidzirwa yeinotakura mafoto inoburitsa photocurrent. Uyu ndiwo musimboti wekutanga wePN junction photodetector.

(3)PIN photodetector
Pin photodiode ndeye P-mhando zvinhu uye N-mhando yezvinhu pakati peI layer, iyo I layer yezvinyorwa kazhinji ndeyemukati kana yakaderera-doping zvinhu. Mashandiro ayo ekushanda akafanana nePN junction, apo PIN junction inoratidzwa nemwaranzi yemwenje, iyo photon inotamisa simba kune erekitironi, ichigadzira mafotogenerated charge carriers, uye iyo yemukati yemagetsi munda kana yekunze munda wemagetsi unoparadzanisa iyo photogenerated electron-gomba. mapeya ari muchikamu chekuderera, uye vatakuri vechaji vakakukurwa vachagadzira ikozvino mudunhu rekunze. Basa rinoitwa ne layer I nderekuwedzera hupamhi hwe depletion layer, uye iyo layer ini ndichanyatsoita depletion layer pasi pehombe bias voltage, uye ma electron-hole pairs anogadzirwa achaparadzaniswa nekukurumidza, saka kukurumidza kwekupindura kwe PIN junction photodetector inowanzo mhanya kupfuura iyo yePN junction detector. Vatakuri vari kunze kweI layer vanounganidzwawo nedepletion layer kuburikidza nekupararira kwekufamba, vachigadzira diffusion ikozvino. Ukobvu hweI layer hunowanzo hutete, uye chinangwa chayo ndechekuvandudza kukurumidza kwekupindura kwe detector.

(4)APD photodetectorAvalanche photodiode
The mechanism ofAvalanche photodiodeyakafanana neiyo yePN junction. APD photodetector inoshandisa zvakanyanya doped PN junction, iyo yekushanda voltage inobva pakuona APD yakakura, uye kana yakakura reverse bias yawedzerwa, kudhumhana ionization uye kuwanda kweavalanche kuchaitika mukati meAPD, uye kushanda kwe detector kunowedzera photocurrent. Kana APD iri mu reverse bias mode, nzvimbo yemagetsi muchikamu chekudzikisa ichave yakasimba zvikuru, uye mapikicha anotakura anogadzirwa nechiedza achakurumidza kupatsanurwa uye nokukurumidza kukukurwa pasi pechiito chemunda wemagetsi. Pane mukana wekuti maerekitironi anodhumhana neretisi panguva iyi, zvichiita kuti maerekitironi ari muletisi ave ionized. Iyi nzira inodzokororwa, uye iyo ionized ions mu lattice inopindirana neretiti, zvichiita kuti nhamba yevatakuri vemhosva mu APD iwedzere, zvichiita kuti iwedzere ikozvino. Iyi ndiyo yakasarudzika nzira yemuviri mukati meAPD iyo APD-yakavakirwa ma detectors anowanzo ane maitiro ekukurumidza kupindura kumhanya, yakakura ikozvino kukosha kukosha uye yakanyanya kunzwa. Kuenzaniswa nePN junction uye PIN junction, APD ine kukurumidza kupindura kumhanya, inova ndiyo inokurumidza kupindura yekumhanya pakati peazvino photosensitive chubhu.

(5) Schottky junction photodetector
Chimiro chekutanga cheSchottky junction photodetector iSchottky diode, iyo maitiro emagetsi akafanana neaya ePN junction inotsanangurwa pamusoro apa, uye ine unidirectional conductivity ine positive conduction uye reverse cut-off. Kana simbi ine basa repamusoro uye semiconductor ine yakaderera basa rekuita fomu yekubata, Schottky chipingamupinyi chinoumbwa, uye chinoguma junction is Schottky junction. Muchina mukuru wakada kuenzana nePN junction, uchitora N-type semiconductors semuenzaniso, kana zvinhu zviviri zvikaumba kusangana, nekuda kwekusiyana kweelectronconcentration yemidziyo miviri, maerekitironi ari musemiconductor achapararira kudivi resimbi. Maerekitironi akapararira anoungana achienderera kune imwe mugumo wesimbi, nokudaro achiparadza yekutanga magetsi kusarerekera kwesimbi, kuumba yakavakirwa-mukati magetsi munda kubva semiconductor kuenda kune simbi pane yakasangana pamusoro, uye maerekitironi achakukurwa pasi pechiito chemagetsi. mukati memagetsi emukati, uye kupararira kwemutakuri uye kukukurwa kwekufamba kuchaitwa panguva imwe chete, mushure menguva yenguva kusvika kune dynamic equilibrium, uye pakupedzisira kugadzira Schottky junction. Pasi pemamiriro echiedza, nzvimbo inodzivirira inotora chiedza zvakananga uye inogadzira ma electron-hole pairs, ukuwo mafotogenerated carriers ari mukati mePN junction anofanirwa kupfuura nenharaunda yekupararira kuti asvike dunhu rekusangana. Kuenzaniswa nePN junction, iyo photodetector yakavakirwa paSchottky junction ine kukurumidza kupindura kumhanya, uye kukurumidza kupindura kunogona kutosvika ns level.