Rudzi rwePhotodetector mudziyochimiro
PhotomdetectorChishandiso chinoshandura chiratidzo chechiratidzo chemagetsi, chimiro chayo uye chakasiyana siyana, chinogona kunyanya kukamurwa mumapoka anotevera:
(1) Photoconductive Photodetector
Kana zvigadzirwa zvePhosendenosveswa zvinonyorwa chiedza, mutakuri wehuni anowedzera kuitwa kwavo uye kuderedza kuramba kwavo. Vatakuri vanofara pamhepo tembiricha vanofamba nenzira yekufambisa nenzira yekuita kwemunda wemagetsi, saka kugadzira ikozvino. Pasi pemamiriro echiedza, elekitori dzinofara uye shanduko inoitika. Panguva imwecheteyo, ivo vanofamba pasi pechiitiko chemunda yemagetsi kuti ugadzire photoscurrent. Iyo inokonzeresa vatambi vepikicha vanowedzera kufambidzana kwechishandiso uye nekudzikisa kupokana. PhotoCondIctive Photodetectors vanowanzo ratidza kuwana kwakanyanya uye kutevedzera kukuru mukuita, asi havakwanisi kupindura mwaka wepamusoro-frequency.
(2)Pn Photomdetector
PN pn phatetector inoumbwa neiyo kusangana pakati peP-Type Semiconductor Chinyorwa uye N-Type Semiconductor Chinyorwa. Kusangana kusati kwaumbwa, izvo zviviri zvigadzirwa zviri mune imwe nyika. Iyo Fermi Level muP-Type Semiconductor iri pedyo nePreet yeValence Band, nepo iyo Fermi level muN-Type Semiconductor iri padyo neyekugadziriswa bhendi. Panguva imwecheteyo, iyo fermi mwero weN-mhando zvinyorwa pamucheto webhendi rekuita rinoenderera mberi nekudzikira kudzika kusvikira iwo mwero wechipiri uri munzvimbo imwechete. Shanduko yenzvimbo yekufambisa bhendi uye bhendi yeValence inoperekedzwa zvakare nekukotama kwebhendi. Iyo PN Junction iri mukuenzana uye ine yunifomu fermi level. Kubva pane chimwe chikamu chekuridza kutakura kuongorora, vazhinji vevatakuri veP-mhando zvinhu maburi, nepo vazhinji vekupomera vatakuri muN-mhando zvinhu maElekitori. Kana izvo zviviri zvacho zviri kusangana, nekuda kwemusiyano mukutakura, maElekitori muN-Type zvinhu zvichawedzera kuP-mhando, nepo maelekitori muN-mhando zvinhu zvinosiyana nenzira yakatarisana nemakomba. Nzvimbo isina kugadziriswa yasara nekusiyana kweasarudzo dzemunda emagetsi, uye iyo nzira yekudakara yakati wandei. iyo yekutanga inotakura kuyerera zero. Zvemukati zvine simba chiyero.
Kana iyo PN Junction inooneswa radiation yechiedza, simba rePhoton rinoendeswa kune mutakuri, uye mutakuri wemoto, ndiko kuti, iyo emagetsi emagetsi emagetsi-gomba, inogadzirwa. Muzviitiko zvemubatanidzwa wemunda wemagetsi, maEkiresi uye gomba anofamba-famba mudunhu ne p Iyi ndiyo yekutanga nheyo yePN Junction Photodetector.
(3)Pini Photodetector
Pin Photodiode ndeye P-mhando zvinyorwa uye n-mhando zvinyorwa pakati peiyo denderedzwa, iyo i layer yezvinyorwa kazhinji kazhinji inonakidza kana yakaderera-doping. Basa rayo rekushanda rakafanana neiyo pn Junction, apo iyo Pin Junction radiation kune iyo Electration emagetsi, uye iyo yemukati mhepo yegomba mudenga, uye iyo yekuvhunduka yekutakura inotakura ichaumba yazvino mudunhu rekunze. Basa rakatamba neLayer Ini ndere kuupamhi hweanopamha Vatakuri kunze kweiyo i dura zvakare inounganidzwa zvakare neyekudzvanya layer kuburikidza neissfusion kufamba, kuumba kusiyana kwazvino. Iko ukobvu kweiyo idendere kazhinji yakaonda kwazvo, uye chinangwa chayo ndechekuvandudza mhinduro yekukurumidza kweiyo detector.
(4)APD PhotosDetectorAvalanche Photodiode
Maitiro eAvalanche Photodiodeyakafanana neiyo yePN Junction. APD Photos Inoshandisa Yakanyanya Kuchengeterwa PN Junction, Iyo Yekuvhiya Voltage yakave yakawanikwa, uye kana boka rakakura reionization uye vaAvanche vanozoitika mukati me APD, uye kuita kweiyo detector kunowedzera kuwanda. Kana APD mune reverse bias mode, munda wemagetsi mune yekudzvanya layer ichave yakasimba kwazvo, uye vatakuri vepikicha vakagadzirwa nechiedza vachakurumidza kuparadzaniswa uye nekukurumidza kudhonzwa pasi pechiitiko chemunda yemagetsi. Pane mukana wekuti ma elekitori anopinda mune lattice panguva ino, zvichikonzera ma elekitori mune latice kuti izirwe. Kuita uku kunodzokororwa, uye iyo ioniised ion mu latice zvakare kuwirirana nedare, zvichikonzera huwandu hwevatakuri mune apd kuti uwedzere, zvichikonzerwa neyazvino. Iyi ndiyo nzira yakasarudzika yemuviri mukati me APD iyo APD-yakavakirwa maApd inowanzove nehunhu hwekukurumidza kupindura kwekukurumidza kumhanya, kukoshesa kwazvino kukosha kuwana uye nekunzwa kwakanyanya. Kuenzaniswa nePN Junction uye Pin Junction, APD ine nekukurumidza kupindura kwekumhanya, iyo ndiyo mhinduro inokurumidza kupindura pakati pezvino photosensitive tubes.
(5) Schottky Junction Photodetector
Chimiro chekutanga cheSyscoty Junction iri Schodector Diode, ane maitiro emagetsi akafanana neayo wePN Junction yakatsanangurwa pamusoro, uye ine unidirection kusawirirana nekuita kwakanaka uye kudzoreredzwa kwakabviswa. Kana simbi ine yakakwirira basa basa uye semiconductor neyakaderera basa rekushanda Fomu bata, chidzidzo chekuchenjera chinoumbwa, uye juni inokonzerwa neyakagashika is schottky junction. Mitezo mikuru yakafanana nePN Junction, kutora n-Type semiconductive semuenzaniso, nekuda kwezvinhu zviviri zvemagetsi zvemagetsi, maElekitori muMiconondructor achasiyanisa neshumba yesimbi. Emagetsi akasiyana anounganidza mumwe chete wesimbi, achiumba ndima yemagetsi emagetsi kubva kuSimbi yemukati, uye gadziriso yematare. kuenzana, uye pakupedzisira gadzira schottky junction. Mumamiriro ezvinhu echikadzi, dunhu risingabati rakananga kuchiedza mwenje uye rinogadzira emagetsi-gomba, nepo vatakuri vepfambi vari mukati mePN Juncsion mudunhu rekusvika padunhu renzvimbo. Kuenzaniswa nePN Junction, iyo Photodetector yakavakirwa pane Schottky Junction ine nekukurumidza kupindura kwemhinduro, uye kumhanya kwemhepo kunogona kutovapo ns level.
Kutumira Nguva: Aug-13-2024