Yepamusoro yakasanganiswa yakaonda firimu lithium niobate electro-optic modulator

High linearityelectro-optic modulatoruye microwave photon application
Nekuwedzera kuri kuita zvinodiwa nemasisitimu ekutaurirana, kuti vawedzere kuvandudza kugona kwekufambisa kwemasaini, vanhu vanosanganisa mafotoni nemaerekitironi kuti vawane zvakanakira, uye microwave photonics ichazvarwa. Iyo electro-optical modulator inodiwa pakushandura magetsi kuti avheneke mukatimicrowave photonic systems, uye danho rinokosha iri rinowanzo gadzirisa kushanda kwehurongwa hwose. Sezvo kushandurwa kweredhiyo frequency siginecha kuita optical domain ndeye analog chiratidzo maitiro, uye akajairwaelectro-optical modulatorsvane inherent nonlinearity, pane yakakomba chiratidzo kukanganisa mushanduko maitiro. Kuti uwane yakaringana mutsara modulation, iyo inoshanda nzvimbo yemodulator inowanzogadziriswa pane orthogonal bias point, asi haigone kuzadzisa zvinodiwa zve microwave photon link yemutsara wemodulator. Electro-optic modulators ane high linearity inodiwa nekukurumidza.

Iyo yakakwira-kumhanya refractive index modulation yesilicon zvinhu inowanzoitwa neiyo yemahara inotakura plasma dispersion (FCD) mhedzisiro. Zvose zviri zviviri FCD mhedzisiro uye PN junction modulation hazvina mutsara, izvo zvinoita kuti silicon modulator ive shoma pane iyo lithium niobate modulator. Lithium niobate zvinhu zvinoratidzira zvakanakisaelectro-optical modulationzvivakwa nekuda kweiyo Pucker maitiro. Panguva imwecheteyo, lithium niobate zvinhu zvine zvakanakira bandwidth hombe, yakanaka modulation maitiro, kurasikirwa kwakaderera, nyore kusanganisa uye kuenderana ne semiconductor process, kushandiswa kweiyo yakaonda firimu lithium niobate kuita yakakwirira-performance electro-optical modulator, zvichienzaniswa nesilicon. inenge isina "short plate", asiwo kuti uwane yakakwirira mutsara. Firimu rakaonda lithium niobate (LNOI) electro-optic modulator pane insulator yave nzira inovimbisa yekusimudzira. Nekuvandudzwa kwefirimu yakaonda yelithium niobate zvinhu zvekugadzirira tekinoroji uye waveguide etching tekinoroji, iyo yakanyanya kutendeuka kunyatsoshanda uye nepamusoro kubatanidzwa kwemutete firimu lithium niobate electro-optic modulator yave nzvimbo yedzidzo yepasirese neindasitiri.

Hunhu hwemutete firimu lithium niobate
MuUnited States DAP AR kuronga yakaita ongororo inotevera yelithium niobate zvinhu: kana iyo yepakati yemagetsi revolution yakatumidzwa zita resilicon zvinhu zvinoita kuti zviitike, ipapo nzvimbo yekuzvarwa yephotonics revolution inogona kupihwa zita rekuti lithium niobate. . Izvi zvinodaro nekuti lithium niobate inobatanidza electro-optical effect, acousto-optical effect, piezoelectric effect, thermoelectric effect uye photorefractive effect mune imwe, sezvinongoita silicon zvinhu mumunda we optics.

Panyaya yemaitiro ekutapurirana kwemaziso, InP zvinhu zvine kurasikirwa kukuru kwepa-chip kutapurirana nekuda kwekutorwa kwechiedza mubhendi rinowanzo shandiswa 1550nm. SiO2 uye silicon nitride vane akanakisa kutapurirana maitiro, uye kurasikirwa kunogona kusvika padanho re ~ 0.01dB/cm; Parizvino, iyo waveguide kurasikirwa kweyakaonda-firimu lithium niobate waveguide inogona kusvika padanho re0.03dB/cm, uye kurasikirwa kwemutete-firimu lithium niobate waveguide ine mukana wekuwedzera kuderedzwa nekuenderera mberi kwekuvandudzwa kweiyo tekinoroji level mu. ramangwana. Naizvozvo, iyo yakaonda firimu lithium niobate zvinhu icharatidza kuita kwakanaka kune passive light zvimiro senge photosynthetic nzira, shunt uye microring.

Panyaya yechizvarwa chechiedza, InP chete inokwanisa kuburitsa mwenje zvakananga; Naizvozvo, pakushandiswa kwema microwave photons, zvinofanirwa kuunza InP yakavakirwa mwenje sosi paLNOI based photonic integrated chip nenzira yekudzosera welding kana epitaxial kukura. Panyaya yemwenje modulation, yakasimbiswa pamusoro kuti firimu rakatetepa lithium niobate zvinhu zviri nyore kuwana hombe modulation bandwidth, yakaderera hafu-wave voltage uye yakaderera kutapurirana kurasikirwa kupfuura InP neSi. Uyezve, iyo yakakwira mutsara we electro-optical modulation yeatete firimu lithium niobate zvinhu zvakakosha kune ese microwave photon application.

Panyaya ye optical routing, high speed electro-optical response yefirimu yakaonda lithium niobate material inoita kuti LNOI based optical switch ikwanise kumhanyisa-speed optical routing switching, uye mashandisirwo emagetsi e-high-speed switching akadererawo. Kune iyo yakajairwa kushandiswa kweiyo yakasanganiswa microwave photon tekinoroji, iyo optically inodzorwa beamforming chip ine kugona kwekumhanya-mhanya kuchinjisa kuzadzisa zvinodiwa nekukurumidza beam scanning, uye maitiro e-ultra-low mashandisiro emagetsi akanyatso kuchinjirwa kune zvakaomesesa zvinodiwa zvehombe. -scale phased array system. Kunyangwe iyo InP yakavakirwa Optical switch inogona zvakare kuona yakakwira-kumhanya yekuona nzira switching, ichaunza ruzha rwakakura, kunyanya kana iyo multilevel Optical switch ichidonha, iyo ruzha coefficient ichadzikira zvakanyanya. Silicon, SiO2 uye silicon nitride zvinhu zvinongokwanisa kushandura nzira dzemaziso kuburikidza ne thermo-optical effect kana carrier dispersion effect, iyo ine zvakaipira zvekushandisa kwesimba guru uye kunonoka kushandura. Kana chiyero chekukura kwechikamu chechikamu chakakura, hachikwanisi kusangana nezvinodiwa zvekushandisa simba.

Panyaya ye optical amplification, iyosemiconductor optical amplifier (SOA) yakavakirwa paInP yanga yakakura pakushandiswa kwekutengesa, asi ine zvakaipira zvemhando yepamusoro coefficient uye yakaderera saturation yekubuda simba, izvo zvisingaenderane nekushandiswa kwema microwave photons. Iyo parametric amplification process yeyakaonda-firimu lithium niobate waveguide yakavakirwa pa periodic activation uye inversion inogona kuwana yakaderera ruzha uye yakakwirira simba pa-chip optical amplification, iyo inogona kunyatso kuzadzisa zvinodiwa zvakabatanidzwa microwave photon tekinoroji ye-chip optical amplification.

Panyaya yekuonekwa kwechiedza, iyo yakaonda firimu lithium niobate ine yakanaka kutapurirana maitiro kuchiedza mu1550 nm bhendi. Basa rekushandura photoelectric harigoni kuitika, saka kune microwave photon applications, kuitira kuti isangane nezvinodiwa zve photoelectric kutendeuka pane chip. InGaAs kana Ge-Si yekuona mauniti inoda kuunzwa paLNOI yakavakirwa photonic yakabatanidzwa machipi nekurodha welding kana epitaxial kukura. Panyaya yekubatanidza ne optical fiber, nekuti iyo optical fiber pachayo iSiO2 zvinhu, iyo mode yeSiO2 waveguide ine yakanyanya kuenderana dhigirii neiyo mode field ye optical fiber, uye kubatana ndiko kwakanyanya nyore. Iyo modhi yemunda dhayamita yeyakanyanya kudzorwa waveguide yefirimu yakaonda lithium niobate inenge 1μm, iyo yakasiyana chaizvo nemodhiyo yendima ye optical fiber, saka yakakodzera modhi nzvimbo shanduko inofanirwa kuitwa kuti ienderane nendima yemodhi ye optical fiber.

Panyaya yekubatanidza, kunyangwe zvinhu zvakasiyana-siyana zvine mukana wekubatanidza wakanyanya zvinoenderana neiyo inopeta radius yewaveguide (yakakanganiswa nekudzikiswa kweiyo waveguide mode field). Iyo yakasimba yakadzorwa waveguide inobvumira diki kubhenda radius, iyo inonyanya kubatsira pakuzadzikiswa kwekubatanidzwa kwepamusoro. Naizvozvo, yakaonda-firimu lithium niobate waveguides ine mukana wekuwana yakakwira kubatanidzwa. Naizvozvo, kutaridzika kwemuonda firimu lithium niobate kunoita kuti zvikwanise kuti lithium niobate zvinhu kunyatsoita basa rekuona "silicon". Nekushandiswa kwema microwave photons, zvakanakira zvemutete firimu lithium niobate zviri pachena.