Iyo musimboti uye yazvino mamiriro eavalanche photodetector (APD photodetector) Chikamu Chechipiri

Nheyo uye mamiriro ezvinhu aripoAvalanche photodetector (APD photodetector) Chikamu Chechipiri

2.2 APD chip chimiro
Inonzwisisika chip chimiro ndiyo vimbiso yekutanga yemhando yepamusoro dhizaini. Magadzirirwo emagadzirirwo eAPD anonyanya kufunga nezve RC nguva isingachinji, gomba kubatwa pane heterojunction, mutakuri wekufambisa nguva kuburikidza nedunhu rekuderera uye zvichingodaro. Kugadziriswa kwechimiro chayo kunopfupikiswa pazasi:

(1) Mamiriro ezvinhu
Iyo yakapfava APD chimiro yakavakirwa paPIN photodiode, dunhu reP neN dunhu rakanyanyisa, uye N-mhando kana P-mhando inodzinga kaviri inounzwa munzvimbo iri padyo neP kana N dunhu kugadzira echipiri maerekitironi negomba. vaviri vaviri, kuitira kuti uone kukwidziridzwa kweiyo yekutanga photocurrent. Kune InP yakatevedzana zvinhu, nekuti gomba rinokanganisa ionization coefficient yakakura kupfuura erekitironi kukanganisa ionization coefficient, nzvimbo yekuwana yeN-mhando doping inowanzoiswa mudunhu reP. Mumamiriro ezvinhu akanaka, maburi chete anopinzwa munzvimbo yekuwana, saka chimiro ichi chinodaidzwa kuti gomba-injected structure.

(2) Kutora uye kuwana zvinosiyaniswa
Nekuda kwehupamhi bhendi gap maitiro eInP (InP iri 1.35eV uye InGaAs iri 0.75eV), InP inowanzo shandiswa seyakawanda zone zvinhu uye InGaAs seyakatorwa nzvimbo.

(3) Kutora, gradient uye kuwana (SAGM) zvimiro zvinotsanangurwa zvakateerana
Parizvino, michina yakawanda yeAPD yekutengeserana inoshandisa InP/InGaAs zvinhu, InGaAs seyekunyura, InP pasi pemunda wemagetsi wepamusoro (> 5x105V/cm) pasina kuputsika, inogona kushandiswa senzvimbo yekuwana zvinhu. Kune ichi chinyorwa, dhizaini yeiyi APD ndeyekuti iyo avalanche process inoumbwa muN-type InP nekudhumhana kwemakomba. Tichifunga nezvemutsauko mukuru webhendi gap pakati peInP neInGaAs, mutsauko wesimba unosvika 0.4eV mubhendi revalence unoita kuti maburi anogadzirwa muInGaAs absorption layer avharirwe pamupendero weheterojunction asati asvika kuInP multiplier layer uye kumhanya kwakanyanya. yakaderedzwa, zvichikonzera nguva yakareba yekupindura uye nhete bandwidth yeiyi APD. Dambudziko iri rinogona kugadziriswa nekuwedzera InGaAsP yekushandura layer pakati pezvinhu zviviri izvi.

(4) Kutora, gradient, kubhadharisa uye kuwana (SAGCM) zvimiro zvinotsanangurwa zvakateerana.
Kuti uwedzere kugadzirisa kugovera kwemagetsi kugovera kweiyo absorption layer uye yekuwana layer, iyo yekuchaja layer inounzwa mudhizaini dhizaini, iyo inovandudza zvakanyanya kukurumidza kwechigadzirwa uye kupindura.

(5) Resonator yakawedzerwa (RCE) SAGCM chimiro
Mune iyo yepamusoro yepamusoro dhizaini yemadhizaini echinyakare, isu tinofanirwa kutarisana nechokwadi chekuti ukobvu hweiyo absorption layer chinhu chinopokana chekumhanya kwechigadzirwa uye quantum kunyatsoita. Ukobvu hwakatetepa hweiyo inonwisa layer inogona kuderedza inotakura nguva yekufambisa, saka hombe bandwidth inogona kuwanikwa. Nekudaro, panguva imwecheteyo, kuti uwane yakakwira quantum kunyatsoita, iyo yekunyudza layer inoda kuve neukobvu hwakakwana. Mhinduro yedambudziko iri inogona kunge iri resonant cavity (RCE) chimiro, ndiko kuti, iyo yakagoverwa Bragg Reflector (DBR) yakagadzirirwa pazasi uye pamusoro pechigadzirwa. Girazi reDBR rine marudzi maviri ezvishandiso zvine yakaderera refractive index uye yakakwirira refractive index muchimiro, uye iwo maviri anokura achichinjana, uye ukobvu hwega hwega hunosangana nechiitiko chiedza wavelength 1/4 mune semiconductor. Iyo resonator chimiro che detector inogona kusangana nezvinoda kumhanya, ukobvu hweiyo absorption layer inogona kuitwa yakatetepa kwazvo, uye quantum kunyatsoita erekitironi inowedzerwa mushure mekufungidzira kwakati.

(6) Edge-coupled waveguide chimiro (WG-APD)
Imwe mhinduro yekugadzirisa kupokana kweakasiyana mhedzisiro yeabsorption layer ukobvu pakumhanya kwechishandiso uye quantum kunyatsoshanda ndeye kuunza edge-coupled waveguide chimiro. Ichi chimiro chinopinda muchiedza kubva padivi, nekuti iyo yekunyudza layer yakarebesa, zviri nyore kuwana yakakwira quantum kunyatsoita, uye panguva imwe chete, iyo yekunyudza layer inogona kuitwa yakatetepa kwazvo, ichideredza mutakuri wekufambisa nguva. Naizvozvo, chimiro ichi chinogadzirisa kutsamira kwakasiyana kwebandwidth uye kugona pane ukobvu hweiyo absorption layer, uye inotarisirwa kuwana yakakwira mwero uye yakakwira quantum kunyatsoita APD. Maitiro eWG-APD ari nyore kupfuura ayo eRCE APD, ayo anobvisa yakaoma nzira yekugadzirira yeDBR girazi. Naizvozvo, zvinogoneka mundima inoshanda uye yakakodzera kune yakajairika ndege yekubatanidza optical.

3. Mhedziso
Kukura kweavalanchephotodetectorzvinhu uye michina inoongororwa. Erekitironi uye gomba kudhumhana ionization mazinga eInP zvinhu ari padyo neaya eInAlAs, ayo anotungamira kune kaviri maitiro eaviri anotakura symbions, izvo zvinoita kuti avalanche yekuvaka nguva yakareba uye ruzha ruwedzere. Zvichienzaniswa neakachena InAlAs zvinhu, InGaAs (P) /InAlAs uye In (Al) GaAs/InAlAs quantum tsime zvimiro zvine yakawedzera reshiyo yekudhumhana ionization coefficients, saka kuita ruzha kunogona kushandurwa zvakanyanya. Panyaya yechimiro, resonator yakakwidziridzwa (RCE) SAGCM chimiro uye kumucheto-kwakabatana waveguide chimiro (WG-APD) inogadzirwa kuitira kugadzirisa kupokana kweakasiyana mhedzisiro yeabsorption layer ukobvu pakumhanya kwechishandiso uye quantum kunyatsoita. Nekuda kwekuoma kwemaitiro, iyo yakazara inoshanda mashandisirwo ezvivakwa zviviri izvi inoda kuongororwa zvakare.